Semiconductor laser device and manufacturing method of the same

A method of manufacturing a surface-emitting semiconductor laser device, comprising:

• forming a first reflective layer composed of a multilayer film over a semiconductor substrate;
• forming a first conductive layer of a first conductivity-type over the first reflective layer;
• forming a luminescent layer over a part of the first conductive layer;
• forming an insulating layer over a side surface of the luminescent layer over the first conductive layer;
• forming a second conductive layer of a second conductivity-type with a polycrystal over the insulating layer and the luminescent layer;
• forming a second reflective layer composed of a multilayer film over the second conductive layer so as to be located immediately above the luminescent layer;
• forming a first electrode electrically connected to the first conductive layer;
• and
• forming a second electrode over the second conductive layer;
• wherein the second conductive layer is one of a second conductivity-type silicon layer and a second conductivity-type silicon compound layer.