# US 7,614,034 B2 · Method and apparatus for generating OPC rules for placement of scattering bar features utilizing interface mapping technology > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,614,034 B2 - Document ID: US7614034B2 - Status: Granted - Kind: B2 - Application number: 11/594,248 - Filed: 2006-11-08 - Published: 2007-05-31 - Granted: 2009-11-03 - Earliest claimed: 2005-11-08 - Assignees: ASML Masktools B.V. - Inventors: Douglas Van Den Broeke; Sangbong Park; Chung-Wei Hsu; Jang Fung Chen - Web page: https://patentgrep.com/patent/US7614034B2 ## CPC - G03F 1/36: Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A method of applying optical proximity correction features to a mask having a plurality of features to be imaged. The method includes the steps of defining a set of process parameters to be utilized to image the mask; defining a set of pitch ranges corresponding to pitches exhibited by the plurality of features to be imaged; determining an interference map for at least one of the pitch ranges; and generating a set of rules for positioning scattering bars adjacent the plurality of features based on the interference map, where the set of rules governs scattering bar placement for features having a pitch which falls within the pitch range utilized to generate the interference map. ## Claims ### Claim 1 A computer implemented method of applying optical proximity correction features to a mask having a plurality of features to be imaged, said method comprising the steps of: defining a set of process parameters to be utilized to image said mask; defining a set of pitch ranges corresponding to pitches exhibited by said plurality of features to be imaged; determining an interference map for at least one of said pitch ranges; and said computer generating a set of rules for positioning scattering bars adjacent said plurality of features based on said interference map, said set of rules governing scattering bar placement adjacent features of said plurality of features having a pitch which falls within said at least one of said pitch ranges. ### Claim 2 (depends on 1) The method of claim 1, further comprising the step of positioning scattering bars within said mask in accordance with said set of rules. ### Claim 3 (depends on 1) The method of claim 1, further comprising the steps of: determining an interference map for each of said set of pitch ranges; and generating a set of rules for positioning scattering bars adjacent said plurality of features based on said interference map for each pitch range in said set of pitch ranges, each of said set of rules governing scattering bar placement for a specific pitch range. ### Claim 4 (depends on 3) The method of claim 3, further comprising the step of modifying the set of rules associated with a given pitch range based on the set of rules associated with an adjacent pitch range. ### Claim 5 A computer implemented method of generating a mask having a plurality of features to be imaged and optical proximity correction features disposed therein, said computer implemented method comprising the steps of: defining a set of process parameters to be utilized to image said mask; defining a set of pitch ranges corresponding to pitches exhibited by said plurality of features to be imaged; determining an interference map for at least one of said pitch ranges; and said computer generating a set of rules for positioning scattering bars adjacent said plurality of features based on said interference map, said set of rules governing scattering bar placement adjacent features of said plurality of features having a pitch which falls within said at least one of said pitch ranges. ### Claim 6 (depends on 5) The method of claim 5, further comprising the step of positioning scattering bars within said mask in accordance with said set of rules. ### Claim 7 (depends on 5) The method of claim 5, further comprising the steps of: determining an interference map for each of said set of pitch ranges; and generating a set of rules for positioning scattering bars adjacent said plurality of features based on said interference map for each pitch range in said set of pitch ranges, each of said set of rules governing scattering bar placement for a specific pitch range. ### Claim 8 (depends on 7) The method of claim 7, further comprising the step of modifying the set of rules associated with a given pitch range based on the set of rules associated with an adjacent pitch range. ### Claim 9 An apparatus for generating a mask having a plurality of features to be imaged and optical proximity correction features disposed therein, said apparatus comprising: means for defining a set of process parameters to be utilized to image said mask; means for defining a set of pitch ranges corresponding to pitches exhibited by said plurality of features to be imaged; means for determining an interference map for at least one of said pitch ranges; and means for generating a set of rules for positioning scattering bars adjacent said plurality of features based on said interference map, said set of rules governing scattering bar placement adjacent features of said plurality of features having a pitch which falls within said at least one of said pitch ranges. ### Claim 10 (depends on 9) The apparatus of claim 9, further comprising means for positioning scattering bars within said mask in accordance with said set of rules. ### Claim 11 (depends on 9) The apparatus of claim 9, further comprising: means for determining an interference map for each of said set of pitch ranges; and means for generating a set of rules for positioning scattering bars adjacent said plurality of features based on said interference map for each pitch range in said set of pitch ranges, each of said set of rules governing scattering bar placement for a specific pitch range. ### Claim 12 (depends on 7) The apparatus of claim 7, further comprising: means for modifying the set of rules associated with a given pitch range based on the set of rules associated with an adjacent pitch range. ### Claim 13 A computer program product for controlling a computer comprising a recording medium readable by the computer, means recorded on the recording medium for directing the computer to generate files corresponding to a mask having a plurality of features to be imaged in an lithographic imaging process, said generation of said files comprising the steps of defining a set of process parameters to be utilized to image said mask; defining a set of pitch ranges corresponding to pitches exhibited by said plurality of features to be imaged; determining an interference map for at least one of said pitch ranges; and generating a set of rules for positioning scattering bars adjacent said plurality of features based on said interference map, said set of rules governing scattering bar placement adjacent features of said plurality of features having a pitch which falls within said at least one of said pitch ranges. ### Claim 14 (depends on 13) The computer program product of claim 13, wherein the generation of said files further comprises the step of positioning scattering bars within said mask in accordance with said set of rules. ### Claim 15 (depends on 13) The computer program product of claim 13, wherein the generation of said files further comprising the steps of: determining an interference map for each of said set of pitch ranges; and generating a set of rules for positioning scattering bars adjacent said plurality of features based on said interference map for each pitch range in said set of pitch ranges, each of said set of rules governing scattering bar placement for a specific pitch range. ### Claim 16 (depends on 15) The computer program product of claim 15, wherein the generation of said files further comprising the step of modifying the set of rules associated with a given pitch range based on the set of rules associated with an adjacent pitch range. ### Claim 17 A device manufacturing method comprising the steps of: (a) providing a substrate that is at least partially covered by a layer of radiation-sensitive material; (b) providing a projection beam of radiation using an imaging system; (c) generating a mask having a plurality of feature, said mask utilized to endow the projection beam with a pattern in its cross-section; (d) projecting the patterned beam of radiation onto a target portion of the layer of radiation sensitive material, wherein, in step (c), said mask is formed by a method comprising the steps of: defining a set of process parameters to be utilized to image said mask; defining a set of pitch ranges corresponding to pitches exhibited by said plurality of features to be imaged; determining an interference map for at least one of said pitch ranges; and generating a set of rules for positioning scattering bars adjacent said plurality of features based on said interference map, said set of rules governing scattering bar placement adjacent features of said plurality of features having a pitch which falls within said at least one of said pitch ranges. ### Claim 18 (depends on 17) The device manufacturing method of claim 17, wherein the mask generating method of step (c) further comprises the step of positioning scattering bars within said mask in accordance with said set of rules. ### Claim 19 (depends on 17) The device manufacturing method of claim 17, wherein the mask generating method of step (c) further comprises the steps of: determining an interference map for each of said set of pitch ranges; and generating a set of rules for positioning scattering bars adjacent said plurality of features based on said interference map for each pitch range in said set of pitch ranges, each of said set of rules governing scattering bar placement for a specific pitch range. ### Claim 20 (depends on 19) The device manufacturing method of claim 19, wherein the mask generating method of step (c) further comprises the step of modifying the set of rules associated with a given pitch range based on the set of rules associated with an adjacent pitch range.