# US 7,613,218 B2 · Self-pulsation nitride semiconductor laser device and method for fabricating the same

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- Number: US 7,613,218 B2
- Document ID: US7613218B2
- Status: Granted
- Kind: B2
- Application number: 11/637,739
- Filed: 2006-12-13
- Published: 2007-11-29
- Granted: 2009-11-03
- Earliest claimed: 2006-02-28
- Assignees: Panasonic Corporation
- Inventors: Satoshi Tamura; Norio Ikedo
- Web page: https://patentgrep.com/patent/US7613218B2

## CPC

- H01S 5/2231: {with inner confining structure only between the active layer and the upper electrode}
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- H01S 5/0658: {Self-pulsating}
- H01S 5/2009: {by using electron barrier layers}
- H01S 5/221: {containing aluminium}
- H01S 2304/00: Special growth methods for semiconductor lasers
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

In a buried type structure including an active layer sandwiched between an n-type cladding layer and a p-type cladding layer and a current blocking layer having an opening for confining a current flowing to the active layer, a regrown layer made of a nitride semiconductor doped with a p-type impurity is formed on the current blocking layer so as to cover the opening of the current blocking layer, and a portion of the regrown layer buried in the opening disposed to be adjacent to a side face of the opening and having a given width W is changed to have the n-type conductivity. Accordingly, the opening of the current blocking layer is effectively narrowed, so as to realize a self-pulsation nitride semiconductor laser device.

## Claims

### Claim 1

A self-pulsation nitride semiconductor laser device comprising:
an active layer sandwiched between cladding layers; and
a current blocking layer having an opening for confining a current flowing to said active layer,
wherein a regrown layer made of a nitride semiconductor doped with a p-type impurity is formed on said current blocking layer for covering said opening of said current blocking layer,
a portion of said regrown layer buried in said opening of said current blocking layer has an n-type conductivity,
said portion is disposed to be adjacent to a side face of said opening, and said portion has a given width,
one side of said given width that is located near the active layer is longer than the opposite side of said given width, and
an Al composition ratio in said portion is smaller than an Al composition ratio in said current blocking layer.

### Claim 2 (depends on 1)

The self-pulsation nitride semiconductor laser device of claim 1, wherein said given width is 0.25 μm or more.

### Claim 3 (depends on 1)

The self-pulsation nitride semiconductor laser device of claim 1,
wherein said current blocking layer is made of a nitride semiconductor layer doped with an n-type impurity.

### Claim 4 (depends on 1)

The self-pulsation nitride semiconductor laser device of claim 1, wherein said current blocking layer has a smaller refractive index than said regrown layer.

### Claim 5 (depends on 1)

The self-pulsation nitride semiconductor laser device of claim 1,
wherein said regrown layer corresponds to a part of said cladding layers.

### Claim 6 (depends on 1)

The self-pulsation nitride semiconductor laser device of claim 1, wherein said current blocking layer is AlGaN.

### Claim 7 (depends on 1)

The self-pulsation nitride semiconductor laser device of claim 1, wherein said portion is GaN.