# US 7,613,029 B2 · Phase change memory and method for driving the same

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- Number: US 7,613,029 B2
- Document ID: US7613029B2
- Status: Granted
- Kind: B2
- Application number: 11/641,033
- Filed: 2006-12-19
- Published: 2007-06-28
- Granted: 2009-11-03
- Earliest claimed: 2005-12-28
- Assignees: Dongbu Electronics Co., Ltd.
- Inventors: Kwang Jean Kim
- Web page: https://patentgrep.com/patent/US7613029B2

## CPC

- G11C 13/0011: {comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]}
- G11C 13/0004: {comprising amorphous/crystalline phase transition cells}
- H10N 70/20: Multistable switching devices, e.g. memristors
- H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
- H10N 70/8828: {Tellurides, e.g. GeSbTe}
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A phase change memory has a first electrode formed over a substrate, a patterned phase change material layer formed over the first electrode to contact the first electrode and including a conductive material, and a second electrode formed over the patterned phase change material layer to contact the patterned phase change material layer. Instead of heat generation, the conductive channel is used to adjust resistance while maintaining characteristics of non-volatile memories. Hence, the power consumption can be reduced. Due to no use of the phase change, the shortened lifetime of equipment for fabricating semiconductor memories, usually caused by a volume change during the phase change, can be reduced.

## Claims

### Claim 1

A random access memory comprising:
a first electrode formed over a substrate;
a patterned phase change material layer defining a grain boundary therein, said phase change material layer formed over the first electrode to contact the first electrode and including a conductive material; and
a second electrode formed over the patterned phase change material layer to contact the patterned phase change material layer, wherein
a concentration of the phase change material along the grain boundary is sparse; and
said grain boundary is in direct contact with the first and second electrodes and extends continuously and essentially linearly therebetween.

### Claim 2 (depends on 1)

The random access memory of claim 1, wherein when a voltage is applied between the first and second electrodes, a conductive channel is formed inside the patterned phase change material layer, the channel extending along the grain boundary.

### Claim 3 (depends on 2)

The random access memory of claim 2, wherein the first electrode and the second electrode are applied with a positive voltage and a negative voltage, respectively.

### Claim 4 (depends on 2)

The random access memory of claim 2, wherein the channel is formed along the grain boundary defined inside the patterned phase change material layer.

### Claim 5 (depends on 2)

The phase change memory of claim 2, wherein when an inverse voltage is applied to the first and second electrodes, the channel is eliminated.

### Claim 6

A method for operating a random access memory, wherein the random access memory includes a first electrode formed over a substrate, a patterned phase change material layer formed over the first electrode to contact the first electrode and including a conductive material, and a second electrode formed over the patterned phase change material layer to contact the patterned phase change material layer, the method comprising:
forming a continuous conductive channel which extends essentially linearly from the first electrode to the second electrode through the patterned phase change material layer by applying a voltage to the first and second electrodes;
eliminating the conductive channel by applying an inverse voltage to the first and second electrodes, wherein
when forming the conductive channel, components of the phase change material converge thereby decreasing a resistance of the phase change material.

### Claim 7 (depends on 6)

The method of claim 6, wherein when forming the conductive channel, the first electrode is applied with a positive voltage and the second electrode is applied with a negative voltage.

### Claim 8 (depends on 6)

The method of claim 6, wherein the conductive channel is formed along a grain boundary which extends essentially directly and continuously from the first electrode to the second electrode within the patterned phase change material layer.