# US 7,612,969 B2 · Magnetic memory device and method of fabricating the same

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 7,612,969 B2
- Document ID: US7612969B2
- Status: Granted
- Kind: B2
- Application number: 11/614,268
- Filed: 2006-12-21
- Published: 2007-08-02
- Granted: 2009-11-03
- Earliest claimed: 2006-01-27
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Se-Chung Oh; Jang-Eun Lee; Hyun-Jo Kim; Kyung-Tae Nam; Jun-Ho Jeong
- Web page: https://patentgrep.com/patent/US7612969B2

## CPC

- H10N 50/10: Magnetoresistive devices
- B82Y 25/00: Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
- B82Y 40/00: Manufacture or treatment of nanostructures
- G01R 33/093: {using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00)}
- G11C 11/16: using elements in which the storage effect is based on magnetic spin effect
- H01F 10/3218: {Exchange coupling of magnetic films via an antiferromagnetic interface (H01F10/3268 takes precedence)}
- H01F 10/3254: {the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]}
- H01F 41/302: {for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices (spin-exchange-coupled multilayers H01F10/32)}
- H10N 50/01: Manufacture or treatment
- H01F 10/3272: {by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets}
- Y10T 29/49044: Plural magnetic deposition layers
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A magnetic memory device includes a pinning layer, a pinned layer, an insulation layer, which are sequentially stacked on a semiconductor substrate. The magnetic memory device further includes a free layer disposed on the insulation layer, a capping layer disposed on the free layer and an MR (magnetoresistance) enhancing layer interposed between the free layer and the capping layer. The MR enhancing layer is formed of at least one anti-ferromagnetic material.

## Claims

### Claim 1

A magnetic memory device comprising: a pinning layer, a pinned layer, and an insulation layer sequentially stacked on a semiconductor substrate;
a ferromagnetic free layer disposed on the insulation layer;
a capping layer disposed on the ferromagnetic free layer; and
an MR (magnetoresistance) enhancing layer interposed between and in direct physical contact with both the ferromagnetic free layer and the capping layer so as to prevent AFC (anti-ferromagnetic coupling) from occurring between the MR enhancing layer and the free layer, wherein the MR enhancing layer is formed of at least one anti-ferromagnetic material, wherein the MR enhancing layer is formed to a thickness of about 3 to about 10 Å using at least one material selected from the group consisting of iridium manganese (IrMn), platinum manganese (PtMn), and iron manganese (FeMn).