# US 7,612,612 B2 · Calibration circuitry and delay cells in rectilinear RF power amplifier > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,612,612 B2 - Document ID: US7612612B2 - Status: Granted - Kind: B2 - Application number: 11/860,392 - Filed: 2007-09-24 - Published: 2008-12-25 - Granted: 2009-11-03 - Earliest claimed: 2007-06-22 - Assignees: Texas Instruments Incorporated - Inventors: Robert Bogdan Staszewski; See Taur Lee - Web page: https://patentgrep.com/patent/US7612612B2 ## CPC - H03F 3/189: High-frequency amplifiers, e.g. radio frequency amplifiers - H03F 3/211: {using a combination of several amplifiers (H03F3/60 takes precedence)} - H03F 3/602: {Combinations of several amplifiers} - H03F 2200/541: Transformer coupled at the output of an amplifier - H03F: AMPLIFIERS ## Abstract Methods to implement low cost, high efficiency, low loss power combiner with novel matching circuits are disclosed. A narrow band power combiner enables a high power and high efficiency radio frequency power amplifier to be realized using multiple low voltage CMOS transistors or micro power amplifiers. The power combiner may be printed on a package substrate and realized either using single layer substrate through edge coupling or multiple layers substrate through broadside coupling. The micro power amplifiers may be fabricated using low voltage CMOS technology and electrical connections between the outputs from the micro power amplifiers and the power combiner may be provided through stud bumps in a flip chip technology. With the tunable matching circuits, the present invention allows the narrow band power combiner to be tuned to different frequencies. ## Claims ### Claim 1 A power amplifier comprising: A. a power combiner having an output and multiple transformers, the transformers including primary windings configured in parallel and secondary windings connected in series; B. a matching circuit coupled to the power combiner for resonating out parasitic inductances of the transformers; C. multiple micro amplifiers coupled to the power combiner; D. delay cells connected to the micro amplifiers; and E. calibration circuitry coupled to an output of the power combiner and to the delay cells, the calibration circuitry adjusting delays of the delay cells. ### Claim 2 (depends on 1) The power amplifier of claim 1, wherein the primary and secondary windings of the transformers are loosely coupled. ### Claim 3 (depends on 1) The power amplifier of claim 1, wherein the matching circuit tunes the power amplifier for different frequency bands. ### Claim 4 (depends on 1) The power amplifier of claim 1, wherein a subset of the micro amplifiers may be disabled. ### Claim 5 (depends on 4) The power amplifier of claim 4, wherein the subset of micro amplifiers are disabled responsive to a desired output power. ### Claim 6 (depends on 1) The power amplifier of claim 1 further comprising delay cells that adjust output phase of the micro amplifiers. ### Claim 7 (depends on 6) The power amplifier of claim 6, wherein the delay cells can be controlled to be turned off ### Claim 8 (depends on 1) The power amplifier of claim 1, wherein the delays are performed to maximize total power. ### Claim 9 (depends on 1) The power amplifier of claim 1, wherein the delays are performed to maximize forward power. ### Claim 10 (depends on 1) The power amplifier of claim 1, wherein the delays are performed to minimize effects of antenna mismatch. ### Claim 11 (depends on 1) The power amplifier of claim 1 wherein the calibration circuitry adjusts matching circuit elements. ### Claim 12 (depends on 11) The power amplifier of claim 11, wherein the matching circuit element adjustment is performed to minimize effects of antenna mismatch. ### Claim 13 A CMOS RF power amplifier comprising: A. plural transformers having rectilinear primary windings and rectilinear secondary windings, the secondary windings being closely spaced from the primary windings, each primary winding having a center tap connected to a power supply and a pair of opposed terminals, the primary windings being connected in parallel, and the secondary windings being connected in series between an RF output and circuit ground; B. CMOS transistors, each transistor having one terminal connected to an opposed terminal of a primary winding, a second terminal connected to circuit ground, and a gate terminal; and C. differential RF inputs coupled to the gate terminals of the transistors. ### Claim 14 (depends on 13) The amplifier of claim 13 in which the RF inputs are connected to the gates of a first pair of transistors, and including a delay cell having inputs connected to the differential RF inputs and having outputs connected to the gates of a second pair of transistors. ### Claim 15 (depends on 13) The amplifier of claim 13 including a delay cell having inputs coupled to the differential RF inputs and having outputs connected to the gates of a pair of transistors. ### Claim 16 (depends on 13) The amplifier of claim 13 including delay cells, each delay cell having inputs coupled to the differential RF inputs and having outputs connected to the gates of a pair of transistors. ### Claim 17 (depends on 16) The amplifier of claim 16 in which a delay cell has inputs coupled to the differential RF inputs through another delay cell. ### Claim 18 (depends on 13) The amplifier of claim 13 including a delay cell having inputs coupled to the differential RF inputs and outputs connected to the gates of a pair of transistors, and including calibration circuitry having an input connected to the RF output and a control output coupled to the delay cell. ### Claim 19 (depends on 13) The amplifier of claim 13 including delay cells having inputs coupled to the differential RF inputs and outputs connected to the gates of the transistors, and including calibration circuitry having an input connected to the RF output and control outputs coupled to the delay cells. ### Claim 20 (depends on 13) The amplifier of claim 13 in which the primary and secondary windings are formed in one plane, the primary windings are separate strips of conductive material, and the secondary windings are formed in a continuous strip of conductive material on both sides of the primary win dings.