# US 7,612,604 B2 · Semiconductor integrated circuit device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 7,612,604 B2
- Document ID: US7612604B2
- Status: Granted
- Kind: B2
- Application number: 10/429,771
- Filed: 2003-05-06
- Published: 2004-01-29
- Granted: 2009-11-03
- Earliest claimed: 2002-05-07
- Assignees: Hitachi, Ltd.; Hitachi ULSI Systems Co., Ltd.
- Inventors: Masayuki Miyazaki; Yusuke Kanno; Goichi Ono; Toshinobu Shinbo; Yoshihiko Yasu; Kazumasa Yanagisawa; Takashi Kuraishi
- Web page: https://patentgrep.com/patent/US7612604B2

## CPC

- H03K 19/01707: {in asynchronous circuits}
- H03K 19/0016: {by using a control or a clock signal, e.g. in order to apply power supply}
- H10D 84/859: {comprising both N-type and P-type wells, e.g. twin-tub}
- H03K 2217/0018: Special modifications or use of the back gate voltage of a FET
- H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A body bias control system allows for independent design of a functional module, thereby reducing the burden of designing the module. The body bias control system provides a switch circuit having an area in which the body bias is controlled independently of its outside portion, for controlling the supply of body bias in the vicinity of the area. Preferably three types of switches are provided for switching the body bias to suitable levels for a standby mode, a mode of normal operation and a mode of high-speed operation.

## Claims

### Claim 1

A semiconductor integrated circuit device, comprising:
a bias generator to generate a first body bias voltage, a second body bias voltage and a third body bias voltage;
a circuit module including at least a MOS transistor;
a body bias switch circuit including a first MOS transistor to control supply of the first body bias voltage, a second MOS transistor to control supply of the second body bias voltage and a third MOS transistor to control supply of the third body bias voltage, respectively; and
a switch controller to control the body bias switch circuit,
wherein when the circuit module is in a first state, the switch controller to turn on the first MOS transistor of the body bias switch circuit to supply the first body bias voltage to a well of the MOS transistor of the circuit module; when the circuit module is in a second state, the switch controller to turn on the second MOS transistor of the body bias switch circuit to supply the second body bias to the well of the MOS transistor of the circuit module; and when the circuit module is in a third state, the switch controller to turn on the third MOS transistor of the body bias switch circuit to supply the third body bias voltage to the well of the MOS transistor of the circuit module,
the switch controller to transmit a first request signal to the bias generator, and to receive a first acknowledge signal indicating that a bias signal generated by the bias generator has been stabilized,
the switch controller to transmit a second request signal to the body bias switch circuit, and to receive a second acknowledge signal indicating that the control of the body bias switch circuit has been completed, and
the switch controller to receive the first acknowledge signal and the second acknowledge signal and to transmit, to the circuit module, a control signal to start the operation of the circuit module.