# US 7,612,573 B2 · Probe sensing pads and methods of detecting positions of probe needles relative to probe sensing pads > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,612,573 B2 - Document ID: US7612573B2 - Status: Granted - Kind: B2 - Application number: 11/565,471 - Filed: 2006-11-30 - Published: 2007-04-26 - Granted: 2009-11-03 - Earliest claimed: 2005-05-17 - Assignees: Samsung Electronics Co., Ltd. - Inventors: Kun-Up Kim; Chang-Sik Kim; Doo-Seon Lee; Jong-Hyoung Lim - Web page: https://patentgrep.com/patent/US7612573B2 ## CPC - G01R 1/06794: {Devices for sensing when probes are in contact, or in position to contact, with measured object} - G01R 31/2884: {using dedicated test connectors, test elements or test circuits on the IC under test (G01R31/2855 takes precedence)} - G01R 31/2891: {related to sensing or controlling of force, position, temperature (G01R31/2874 takes precedence; sensing of force G01L; sensing of position G01B, G01D; sensing of temperature G01K; controlling in general G05)} - H10W 72/932: {Plan-view shape, i.e. in top view} - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A probe sensing pad used to detect a position of a probe needle includes a probe area, at least two sensing regions contacting peripheral portions of the probe area, sensing elements of different electrical characteristics connected to corresponding sensing regions, and at least one isolation region for electrically insulting the sensing regions. The position of the probe needle relative to the probe sensing pad may be rapidly detected and automatically corrected toward a desired contact site of the probe sensing pad depending upon the voltage measured by a probe needle contacting the probe sensing pad. That is, the measured voltage will have a first value if deflected in a first direction, a second value (different from the first) if deflected in a second direction, and so on. The position of the probe needle can be corrected based on this measurement. ## Claims ### Claim 1 A probe sensing pad comprising: a probe area; a first sensing region contiguous with a first peripheral portion of the probe area; a first sensing element electrically coupled to the first sensing region; a second sensing region continuous with a second peripheral portion of the probe area; a second sensing element electrically coupled to the second sensing region, the second sensing element having different electrical characteristics than the first sensing element; and a first isolation region positioned between the first and the second sensing regions adapted to electrically separate the first sensing region from the second sensing region. ### Claim 2 (depends on 1) The probe sensing pad of claim 1, wherein the first sensing element includes a first diode having a first resistance, and the second sensing element includes a second diode having a second resistance different from the first resistance. ### Claim 3 (depends on 1) The probe sensing pad of claim 1, wherein the first sensing element includes a first number of diodes and the second sensing element includes a second number of diodes, wherein the second number is different than the first number. ### Claim 4 (depends on 1) The probe sensing pad of claim 1, wherein the first sensing element includes a first MOS transistor having a first effective resistance, and the second sensing element includes a second MOS transistor having a second effective resistance different from the first effective resistance. ### Claim 5 (depends on 1) The probe sensing pad of claim 1, wherein the first sensing element includes a first number of MOS transistors and the second sensing element includes a second number of MOS transistors, wherein the second number is different than the first number. ### Claim 6 (depends on 1) The probe sensing pad of claim 1, wherein the first sensing element includes a first resistor having a first resistance, and the second sensing element includes a second resistor having a second resistance different from the first resistance. ### Claim 7 (depends on 1) The probe sensing pad of claim 1, wherein the first sensing element includes a first number of MOS transistors and the second sensing element includes a second number of MOS transistors, wherein the second number is different than the first number. ### Claim 8 (depends on 1) The probe sensing pad of claim 1, wherein the probe region includes an inner region formed of a conductive material and an outer region of an insulation material, including first and second peripheral portions, enclosing the inner region. ### Claim 9 (depends on 8) The probe sensing pad of claim 8, further including a protection semiconductor device electrically coupled to the inner region of the probe region. ### Claim 10 (depends on 9) The probe sensing pad of claim 9, wherein the protection semiconductor device includes a diode or a MOS transistor having a grounded gate electrically coupled between the inner region of the probe region and a ground. ### Claim 11 (depends on 8) The probe sensing pad of claim 8, further including: a first protection semiconductor device electrically coupled between the inner region of the probe region and the first sensing region; and a second protection semiconductor device electrically coupled between the inner region of the probe and the second sensing region. ### Claim 12 (depends on 11) The probe sensing pad of claim 11, wherein the first and the second protection semiconductor devices each include a diode or a MOS transistor having a grounded gate. ### Claim 13 (depends on 1) The probe sensing pad of claim 1, wherein one of the sensing regions is substantially wider than the probe area. ### Claim 14 (depends on 1) The probe sensing pad of claim 1, further including: a third sensing region contiguous with a third peripheral portion of the probe area; a third sensing element electrically coupled to the third sensing region and having different electrical characteristics than the first and the second sensing elements; a fourth sensing region continuous with a fourth peripheral portion of the probe area; a fourth sensing element electrically coupled to the fourth sensing region, the fourth sensing element having different electrical characteristics than the first, the second, and the third sensing elements; a second isolation region positioned between the second and the third sensing regions; a third isolation region positioned between the third and the fourth sensing regions; and a fourth isolation region positioned between the fourth and the first sensing regions, each of said sensing regions being adapted to electrically separate adjacent sensing regions from one another. ### Claim 15 (depends on 14) The probe sensing pad of claim 14, wherein the first through the fourth peripheral regions correspond to first through the fourth sides of a rectangular probe area. ### Claim 16 (depends on 15) The probe sensing pad of claim 15, wherein two opposite sensing regions among the first to the fourth sensing regions have areas substantially wider than the probe area. ### Claim 17 (depends on 14) The probe sensing pad of claim 14, wherein the first through the fourth sensing elements include semiconductor devices through which currents may uni-directionally pass. ### Claim 18 (depends on 17) The probe sensing pad of claim 17, wherein the semiconductor devices of the first through the fourth sensing elements are diodes or MOS transistors having a grounded gate. ### Claim 19 (depends on 18) The probe sensing pad of claim 18, wherein the first sensing element includes one diode, the second sensing element includes two diodes electrically coupled in parallel to the second sensing region, the third sensing element includes three diodes electrically coupled in parallel to the third sensing region, and the fourth sensing element includes four diodes electrically coupled in parallel to the fourth sensing region. ### Claim 20 (depends on 18) The probe sensing pad of claim 18, wherein the first sensing element includes one MOS transistor, the second sensing element includes two MOS transistors electrically coupled in parallel to the second sensing region, the third sensing element includes three MOS transistors electrically coupled in parallel to the third sensing region, and the fourth sensing element includes four MOS transistors electrically coupled in parallel to the fourth sensing region. ### Claim 21 (depends on 1) The probe sensing pad of claim 1, wherein the probe region includes an inner region and outer region enclosing the inner region, the inner region being formed of a material substantially harder than that of the outer region. ### Claim 22 A probe sensing pad comprising: a probe area making contact with a probe needle, wherein the probe area having a rectangular shape including a first side, a second side, a third side and a forth side; a first sensing member for detecting whether the probe needle contacts a desired contact site of the probe area or deviates from the desired contact site along a first direction, wherein the first sensing member includes a first sensing region making contact with the first side of the probe area, and a first sensing element electrically connected to the first sensing region; a second sensing member for detecting whether the probe needle contacts the desired contact site of the probe area or deviates from the desired contact site along a second direction, wherein the second sensing member includes a second sensing region making contact with the second side of the probe area, and a second sensing element electrically connected to the second sensing region; a third sensing member for detecting whether the probe needle contacts the desired contact site of the probe area or deviates from the desired contact site along a third direction, wherein the third sensing member includes a third sensing region making contact with the third side of the probe area, and a third sensing element electrically connected to the third sensing region; a fourth sensing member for detecting whether the probe needle contacts the desired contact site of the probe area or deviates from the desired contact site along a fourth direction, wherein the fourth sensing member includes a fourth sensing region making contact with the fourth side of the probe area, and a fourth sensing element electrically connected to the fourth sensing region; and an isolation member for electrically insulating adjacent sensing regions. ### Claim 23 (depends on 22) The probe sensing pad of claim 22, wherein the isolation member comprises: a first isolation region between the first and the second sensing regions; a second isolation region between the second and the third sensing regions; a third isolation region between the third and the fourth sensing regions; and a fourth isolation region between the fourth and the first sensing regions. ### Claim 24 (depends on 22) The probe sensing pad of claim 22, wherein the first to the fourth sensing regions comprise conductive materials, respectively. ### Claim 25 (depends on 22) The probe sensing pad of claim 22, wherein the probe area comprises an insulation material. ### Claim 26 (depends on 25) The probe sensing pad of claim 25, further comprising at least one protection semiconductor device electrically connected to the second region of the probe area. ### Claim 27 (depends on 25) The probe sensing pad of claim 25, wherein the probe sensing pad comprises four protection semiconductor devices including diodes or MOS transistors having grounded gates, respectively, wherein each of the four protection semiconductor devices is electrically connected to the first to the fourth sensing regions, and wherein each of the four protection semiconductor devices has a backward direction from the second region of the probe area toward each of the first to the fourth sensing regions. ### Claim 28 (depends on 27) The probe sensing pad of claim 27, wherein the four protection semiconductors have substantially the same resistances. ### Claim 29 (depends on 22) The probe sensing pad of claim 22, wherein the probe area comprises: a first region making contact with the first sensing region to the fourth sensing region, the first region including an insulation material; and a second region enclosed by the first region, the second region including a metal. ### Claim 30 (depends on 29) The probe sensing pad of claim 29, wherein the protection semiconductor device comprises a diode or a MOS transistor having a grounded gate, and wherein the protection semiconductor device has a backward direction from the second region of the probe area toward a grounded end portion of the protection semiconductor device. ### Claim 31 (depends on 22) The probe sensing pad of claim 22, wherein the first to the fourth sensing elements have different resistances. ### Claim 32 (depends on 31) The probe sensing pad of claim 31, wherein the first to the fourth sensing elements comprise diodes having substantially the same resistances or MOS transistors including grounded gates, wherein the number of the diodes or the MOS transistor is different from one another, and wherein each of the first to the fourth sensing elements has a backward direction from each of the first to the fourth sensing regions toward each of grounded end portions of the first to the fourth sensing elements. ### Claim 33 (depends on 31) The probe sensing pad of claim 31, wherein the first to the fourth sensing elements comprise diodes having different sizes or MOS transistors including grounded gates, and wherein each of the first to the fourth sensing elements has a backward direction from each of the first to the fourth sensing regions toward each of grounded end portions of the first to the fourth sensing elements. ### Claim 34 (depends on 31) The probe sensing pad of claim 31, wherein the first to the fourth sensing elements comprise resistors having different resistances, and wherein the resistors including grounded end portions, respectively. ### Claim 35 (depends on 22) The probe sensing pad of claim 22, wherein at least one of the first to the fourth sensing regions is substantially wider than an opposite sensing region. ### Claim 36 (depends on 35) The probe sensing pad of claim 35, wherein at least one of the first to the fourth sensing regions is substantially wider than the probe area. ### Claim 37 A probe sensing pad in a semiconductor device comprising: a probe area adapted for contact with a probe needle, wherein the probe area has a rectangular shape including a first side, a second side, a third side and a forth side; a sensing region contacting peripheral portions of the probe area, at least one portion of the sensing region having an area substantially wider than that of the probe area; and a sensing element electrically coupled to the sensing region for detecting contact of the probe needle on the sensing region as opposed to the probe area. ### Claim 38 (depends on 37) The probe sensing pad of claim 37, further including a sensing member comprising sensing regions making contact with the first to the fourth sides of the probe area, and sensing elements electrically connected to the sensing regions, the sensing regions including conductive materials, wherein one of the sensing regions contacting one of the first to the fourth sides is substantially wider than the probe area. ### Claim 39 (depends on 38) The probe sensing pad of claim 38, wherein the sensing elements independently comprise a diode, a MOS transistor having a grounded gate or a resistor, and wherein each of the sensing elements has a grounded end portion. ### Claim 40 (depends on 37) The probe sensing pad of claim 37, wherein the sensing regions comprise metals. ### Claim 41 (depends on 37) The probe sensing pad of claim 37, wherein the probe area comprises an insulation material. ### Claim 42 (depends on 40) The probe sensing pad of claim 40, further comprising a protection semiconductor device electrically connected to the second region of the probe area. ### Claim 43 (depends on 37) The probe sensing pad of claim 37, wherein the probe area comprises: a first region making contact with the sensing regions, the first region including an insulation material; and a second region enclosed by the first region, the second region including a metal. ### Claim 44 (depends on 43) The probe sensing pad of claim 43, wherein the protection semiconductor device comprises a diode or a MOS transistor having a grounded gate, and wherein the protection semiconductor device has a backward direction from the second region toward a grounded end portion of the protection semiconductor device. ### Claim 45 (depends on 43) The method of claim 43, wherein the protection semiconductor device comprises a diode or a MOS transistor having a grounded gate, and wherein the protection semiconductor device has a backward direction from an grounded end portion of the protection semiconductor device toward the sensing regions. ### Claim 46 A method of detecting a position of a probe needle relative to a probe sensing pad in a semiconductor device, comprising: contacting a probe needle with the probe sensing pad that comprises a probe area, at least two sensing regions making contact with peripheral portions of the probe area, sensing elements having different electrical characteristics and being connected to corresponding sensing regions, and an isolation member for electrically insulating adjacent sensing regions; applying an electrical signal to the probe needle along a forward direction from the probe needle toward a grounded end portion of the probe sensing pad; measuring a voltage between the probe needle and the grounded end portion of the probe sensing pad; and determining a position of the probe needle using the measured voltage. ### Claim 47 (depends on 46) The method of claim 46, wherein the sensing elements have different resistances, respectively. ### Claim 48 (depends on 46) The method of claim 46, after determining the position of the probe needle, further comprising; correcting the position of the probe needle toward a desired contact site of the probe sensing pad with reference to a deflection of the probe needle.