# US 7,612,455 B2 · Layered structure for electron device including regions of different wettability, electron device and electron device array that uses such a layered structure > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,612,455 B2 - Document ID: US7612455B2 - Status: Granted - Kind: B2 - Application number: 10/856,878 - Filed: 2004-06-01 - Published: 2004-12-02 - Granted: 2009-11-03 - Earliest claimed: 2003-06-02 - Assignees: Ricoh Company, Ltd. - Inventors: Takanori Tano; Koh Fujimura; Hidenori Tomono; Hitoshi Kondoh - Web page: https://patentgrep.com/patent/US7612455B2 ## CPC - H10K 71/13: using printing techniques, e.g. ink-jet printing or screen printing - H10K 71/611: {using printing deposition, e.g. ink jet printing} - H10D 30/0312: {characterised by the gate electrodes} - H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A layered structure comprises a variable wettability layer including a material that changes a critical surface tension in response to energy provided thereto, the wettability changing layer including at least a high surface energy part of large critical surface tension and a low surface energy part of low critical surface tension, a conductive layer formed on the variable wettability layer at the high surface energy tension part, and a semiconductor layer formed on the variable wettability layer at the low surface energy part. ## Claims ### Claim 1 A layered structure comprising: a variable wettability layer including a material that changes a critical surface tension in response to ultraviolet radiation of a wavelength of 200 nm 300 nm provided thereto, said variable wettability layer comprising at least a high surface energy part of larger critical surface tension and a low surface energy part of lower critical surface tension; a conductive layer formed on said variable wettability layer at said high surface energy tension part; a semiconductor layer formed on said variable wettability layer at said low surface energy part; wherein there exists a difference of critical surface tension in said variable wettability layer between said low surface energy part and said high surface energy part; said variable wettability layer comprising at least a first material and a second material, said first material having an electrical insulation higher than the second material, and said second material having a higher change of said critical surface tension in response to energy provided thereto than the first material; and said variable wettability layer having a layered structure comprising, 1) a first layer of said first material and 2) a second layer formed over said first layer by said second material, said variable wettability layer being a material selected from the group consisting of the following chemical formulae (1)-(5): ### Claim 2 (depends on 1) The layered structure as claimed in claim 1, wherein said low surface energy part of said variable wettability layer has a critical surface tension of 40 mN/m or less. ### Claim 3 (depends on 1) The layered structure as claimed in claim 1, wherein there is provided a distribution of materials in said variable wettability layer in a thickness direction thereof. ### Claim 4 (depends on 1) The layered structure as claimed in claim 1, wherein said variable wettability layer comprises a polymer material having a hydrophobic group on a side chain. ### Claim 5 (depends on 4) The layered structure as claimed in claim 4, wherein said polymer material comprises a polymer material including polyimide. ### Claim 6 (depends on 1) The layered structure as claimed in claim 1, wherein said semiconductor layer comprises an organic semiconductor. ### Claim 7 (depends on 1) The layered structure as claimed in claim 1, wherein ultraviolet radiation is provided as said energy that causes a change of the critical surface tension. ### Claim 8 (depends on 1) The layered structure as claimed in claim 1, wherein there exists a different of critical surface tension of 10 mN/m or more in said variable wettability layer between said low surface energy part and said high surface energy part, and said first material and said second material are contained in said variable wettability layer with a weight ratio of 50/50-99/1. ### Claim 9 (depends on 1) The layered structure as claimed in claim 1, wherein there exists a difference of critical surface tension of 10 mN/m or more in said variable wettability layer between said low surface energy part and said high surface energy part, and wherein said variable wettability layer comprises a polymer material having a hydrophobic group on a side chain thereof. ### Claim 10 (depends on 1) The layered structure as claimed in claim 1, wherein the critical surface tension is 10 mN/m or more. ### Claim 11 (depends on 1) The layered structure as claimed in claim 1, wherein said second material forming said second layer comprises a polymer material including polyimide. ### Claim 12 An electron device comprising a layered structure, said layered structure comprising: a variable wettability layer including a material that changes a critical surface tension in response to ultraviolet radiation of a wavelength of 200 nm 300 nm provided thereto, said variable wettability layer comprising at least a high surface energy part of larger critical surface tension and a low surface energy part of lower critical surface tension; a conductive layer formed on said variable wettability layer at said high surface energy tension part; a semiconductor layer formed on said variable wettability layer at said low surface energy part; wherein there exists a difference of critical surface tension in said variable wettability layer between said low surface energy part and said high surface energy part; said variable wettability layer comprising at least a first material and a second material, said first material having an electrical insulation higher than the second material, and said second material having a higher change of said critical surface tension in response to energy provided thereto than the first material; and said variable wettability layer having a layered structure comprising, 1) a first layer of said first material and 2) a second layer formed over said first layer by said second material, said variable wettability layer being a material selected from the group consisting of the following chemical formulae (1)-(5): ### Claim 13 (depends on 12) The electron device as claimed in claim 12, wherein said conductive layer forms a pair of electrode layers, said electron device further comprising an insulator layer adjacent to the semiconductor layer and a further electrode layer adjacent to the insulator layer. ### Claim 14 (depends on 12) The electron device as claimed in claim 12, wherein the variable wettability layer is provided on an electrode layer, the semiconductor layer is provided on the variable wettability layer, and wherein the conductive layer forms a pair of electrodes adjoining the semiconductor layer. ### Claim 15 (depends on 12) The electron device as claimed in claim 12, wherein the critical surface tension is 10 mN/m or more. ### Claim 16 An array of electron devices comprising a plurality of the electron devices, each of said electron devices having a layered structure and comprising: a variable wettability layer including a material that changes a critical surface tension in response to ultraviolet radiation of a wavelength of 200 nm 300 nm provided thereto, said variable wettability layer comprising at least a high surface energy part of larger critical surface tension and a low surface energy part of lower critical surface tension; a conductive layer formed on said variable wettability layer at said high surface energy tension part; a semiconductor layer formed on said variable wettability layer at said low surface energy part, wherein there exists a difference of critical surface tension in said variable wettability layer between said low surface energy part and said high surface energy part; said variable wettability layer comprising at least a first material and a second material, said first material having an electrical insulation higher than the second material, and said second material having a higher change of said critical surface tension in response to energy provided thereto than the first material; and said variable wettability layer having a layered structure comprising, 1) a first layer of said first material and 2) a second layer formed over said first layer by said second material, said variable wettability layer being a material selected from the group consisting of the following chemical formulae (1)-(5): ### Claim 17 (depends on 16) The array of electron devices as claimed in claim 16, wherein the critical surface tension is 10 mN/m or more. ### Claim 18 A display device comprising an electron device array including a plurality of electron devices, each of said electron devices having a layered structure and comprising: a variable wettability layer including a material that changes a critical surface tension in response to ultraviolet radiation of a wavelength of 200 nm 300 nm provided thereto, said variable wettability layer comprising at least a high surface energy part of larger critical surface tension and a low surface energy part of lower critical surface tension; a conductive layer formed on said variable wettability layer at said high surface energy tension part; a semiconductor layer formed on said variable wettability layer at said low surface energy part, wherein there exists a difference of critical surface tension in said variable wettability layer between said low surface energy part and said high surface energy part; said variable wettability layer comprising at least a first material and a second material, said first material having an electrical insulation higher than the second material, and said second material having a higher change of said critical surface tension in response to energy provided thereto than the first material; and said variable wettability layer having a layered structure comprising, 1) a first layer of said first material and 2) a second layer formed over said first layer by said second material, said variable wettability layer being a material selected from the group consisting of the following chemical formulae (1)-(5): ### Claim 19 (depends on 18) The display device as claimed in claim 18, wherein the critical surface tension is 10 mN/m or more.