# US 7,612,453 B2 · Semiconductor device having an interconnect structure and a reinforcing insulating film > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,612,453 B2 - Document ID: US7612453B2 - Status: Granted - Kind: B2 - Application number: 11/359,440 - Filed: 2006-02-23 - Published: 2007-03-08 - Granted: 2009-11-03 - Earliest claimed: 2005-03-11 - Assignees: NEC Electronics Corporation - Inventors: Tatsuya Usami - Web page: https://patentgrep.com/patent/US7612453B2 ## CPC - H10W 20/425: {Barrier, adhesion or liner layers} - H10W 20/037: {the barrier, adhesion or liner layers being on top of a main fill metal} - H10W 20/063: {by forming conductive members before forming protective insulating material} - H10W 20/064: {by modifying the conductivity of conductive parts, e.g. by alloying} - H10W 20/071: {of dielectric parts thereof} - H10W 20/072: {of dielectric parts comprising air gaps} - H10W 20/093: {by modifying materials of the dielectric parts} - H10W 20/095: {by irradiating with electromagnetic or particle radiation (plasma treatment H10W20/096)} - H10W 20/42: Vias, e.g. via plugs - H10W 20/46: comprising air gaps - H10W 20/47: comprising two or more dielectric layers having different properties, e.g. different dielectric constants - H10W 20/495: {Capacitive arrangements or effects of, or between wiring layers} - H10W 20/039: {also covering sidewalls of the conductive structures} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device includes in an interconnect structure which includes a first interconnect made of a copper-containing metal, a first Cu silicide layer covering the upper portion of the first interconnect, a conductive first plug provided on the upper portion of the Cu silicide layer and connected to the first interconnect, a Cu silicide layer covering the upper portion of the first plug, a first porous MSQ film provided over the side wall from the first interconnect through the first plug and formed to cover the side wall of the first interconnect, the upper portion of the first interconnect, and the side wall of the first plug, and a first SiCN film disposed under the first porous MSQ film to contact with the lower portion of the side wall of the first interconnect and having the greater film density than the first porous MSQ film. ## Claims ### Claim 1 A semiconductor device, comprising: an interconnect layer including a plurality of interconnects; a first cap metal film provided to contact an upper portion of said interconnect and covering the upper portion of said interconnect; a conductive via provided on an upper portion of said first cap metal film and connected to said interconnect; a contiguously integrated insulating film provided from a side wall of said interconnect to a side wall of said via and formed so as to cover the side wall of said interconnect, the upper portion of said interconnect, and the side wall of said via, and an upper portion of said insulating film is denser than a lower portion of said insulating film; and a reinforcing insulating film disposed under said insulating film and contact with a lower portion of the side wall of said interconnect, wherein a thickness of said reinforcing insulating film is substantially uniform and said reinforcing insulating film has greater film density than said insulating film. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein said interconnect structure is disposed to contact an upper portion of said via and further comprises a second cap metal film covering the upper portion of said via. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein said insulating film is configured of a low dielectric constant material. ### Claim 4 (depends on 3) The semiconductor device according to claim 3, wherein said insulating film is a film irradiated by electron beam or by ultraviolet light. ### Claim 5 (depends on 4) The semiconductor device according to claim 4, wherein said insulating film is selected from the group consisting of a polyorganosiloxane film, a siloxane hydride film, or a porous film of said polyorganosiloxane film or said siloxane hydride film, and said reinforcing insulating film is selected from the group consisting of an SiC film, an SiCN film, or an SiON film. ### Claim 6 (depends on 5) The semiconductor device according to claim 5, wherein in an infrared absorption spectrum of said low dielectric constant material, a peak intensity I1 in an infrared absorption band with its peak at 1150 cm−1 is smaller in the upper portion of said insulating film than in the lower portion of said insulating film. ### Claim 7 (depends on 5) The semiconductor device according to claim 5, wherein in an infrared absorption spectrum of said low dielectric constant material, a peak intensity I2 in an infrared absorption band with its peak at 1050 cm−1 is larger in the upper portion of said insulating film than in the lower portion of said insulating film. ### Claim 8 (depends on 5) The semiconductor device according to claim 5, wherein in an infrared absorption spectrum of said low dielectric constant material, a peak intensity I3 in an infrared absorption band with its peak at 3000 cm−1 is smaller in the upper portion of said insulating film than in the lower portion of said insulating film. ### Claim 9 (depends on 1) The semiconductor device according to claim 1, wherein said insulating film is configured of a low dielectric constant material and an upper portion of said insulating film has greater mechanical strength than a lower portion thereof. ### Claim 10 (depends on 1) The semiconductor device according to claim 1, wherein said insulating film is configured of a low dielectric constant material containing carbon as a constituent element and the carbon concentration of an upper portion of said insulating film is lower than a lower portion of said insulating film. ### Claim 11 (depends on 1) The semiconductor device according to claim 1, wherein said insulating film is provided with an air-gap in said insulating film. ### Claim 12 (depends on 11) The semiconductor device according to claim 11, wherein said air-gap is provided between said interconnect layer and a via layer including a plurality of said conductive vias in said insulating film. ### Claim 13 (depends on 1) The semiconductor device according to claim 1, further comprising: a second interconnect made of a copper-containing metal and provided on an upper portion of said via to be connected to said via; and a second reinforcing insulating film disposed as an upper layer of said insulating film so as to contact a lower portion of a sidewall of said second interconnect with greater film density than said insulating film. ### Claim 14 (depends on 1) The semiconductor device according to claim 1, wherein a plurality of said interconnect structures are layered, and said via in one said interconnect structure is connected to said first interconnect in another interconnect structure provided at the upper portion of said one interconnect structure. ### Claim 15 (depends on 1) The semiconductor device according to claim 1, wherein the reinforcing insulating film has a substantially same thickness in a plurality of regions between interconnects. ### Claim 16 (depends on 1) The semiconductor device according to claim 1, wherein the interconnect is made from a copper-containing metal. ### Claim 17 (depends on 1) The semiconductor device according to claim 1, wherein the insulating film has a mechanical strength that is two or more times greater in the upper portion than in the lower portion. ### Claim 18 (depends on 1) The semiconductor device according to claim 1, wherein at a discontinuity surface of the semiconductor device in which a data ratio changes discontinuously, no discontinuity surface is configured to give discontinuous change to a composition and properties of the insulating film. ### Claim 19 (depends on 18) The semiconductor device according to claim 18, wherein when a low data ratio region is provided on a high data ratio region, no surface that is discontinuous in the compositions or properties of the insulating film exists at a level on which a bottom surface of the low data ratio region lies. ### Claim 20 A semiconductor device, comprising: an first interconnect layer including a plurality of interconnects; a first cap metal film provided to contact an upper portion of said interconnect and covering the upper portion of said interconnect; a conductive via provided on an upper portion of said first cap metal film and connected to said interconnect; a first contiguously integrated insulating film provided from a side wall of said interconnect to a side wall of said conductive via and formed so as to cover the side wall of said interconnect, the upper portion of said interconnect, and the side wall of said conductive via, and an upper portion of said first contiguously integrated insulating film is denser than a lower portion of said first contiguously integrated insulating film; a first reinforcing insulating film disposed under said first contiguously integrated insulating film and contact with a lower portion of the side wall of said interconnect, a thickness of said first reinforcing insulating film being substantially uniform and said first reinforcing insulating film having greater film density than said first contiguously integrated insulating film, a second interconnect layer made of a copper-containing metal and provided on an upper portion of said conductive via to be connected to said conductive via; and a second reinforcing insulating film disposed as an upper layer of said first contiguously integrated insulating film so as to contact a lower portion of a sidewall of said second interconnect with greater film density than said first contiguously integrated insulating film, a thickness of said second reinforcing insulating film being substantially uniform and said second reinforcing insulating film having greater film density than said first contiguously integrated insulating film. ### Claim 21 (depends on 20) The semiconductor device according to claim 20, wherein at a discontinuity surface of the semiconductor device in which a data ratio changes discontinuously, no discontinuity surface is configured to give discontinuous change to the composition and properties of the insulating films, and when a low data ratio region is provided on a high data ratio region, no surface that is discontinuous in the compositions or properties of the insulating films exists at a level on which a bottom surface of the low data ratio region lies.