# US 7,612,442 B2 · Semiconductor device

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- Number: US 7,612,442 B2
- Document ID: US7612442B2
- Status: Granted
- Kind: B2
- Application number: 10/573,468
- Filed: 2004-09-24
- Published: 2007-11-29
- Granted: 2009-11-03
- Earliest claimed: 2003-09-25
- Assignees: Hamamatsu Photonics K.K.
- Inventors: Hiroya Kobayashi; Masaharu Muramatsu
- Web page: https://patentgrep.com/patent/US7612442B2

## CPC

- H10W 74/012: {of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills}
- H10D 62/117: {Shapes of semiconductor bodies}
- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/80: {Constructional details of image sensors}
- H10F 39/811: {Interconnections}
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- H10W 70/63: Vias, e.g. via plugs
- H10W 70/655: Fan-out layouts
- H10W 70/681: {comprising holes not having chips therein, e.g. for outgassing, underfilling or bond wire passage}
- H10W 70/682: {comprising holes having chips therein}
- H10W 70/685: comprising multiple insulating layers
- H10W 72/07251: {characterised by changes in properties of the bump connectors during connecting}
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 72/856: {Bump connectors and die-attach connectors (bumps embedded in underfills H10W74/15)}
- H10W 72/90: Bond pads, in general
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

With this semiconductor device, the distortion and cracking of a thinned portion of a semiconductor substrate are prevented to enable high precision focusing with respect to a photodetecting unit and uniformity and stability of high sensitivity of the photodetecting unit to be maintained. A semiconductor device 1 has a semiconductor substrate 10, a wiring substrate 20, conductive bumps 30, and a resin 32. A CCD 12 and a thinned portion 14 are formed on semiconductor substrate 10. Electrodes 16 of semiconductor substrate 10 are connected via conductive bumps 30 to electrodes 22 of wiring substrate 20. Wiring substrate 20 is subject to a wettability processing by which a region 26a that surrounds a region opposing thinned portion 14 and regions 26b that extend to the outer side from region 26a are lowered in the wettability with respect to the resin. Insulating resin 32 fills a gap between outer edge 15 of thinned portion 14 and wiring substrate 20 in order to reinforce the bonding strengths of conductive bumps 30.

## Claims

### Claim 1

A back-illuminated semiconductor device comprising:
a semiconductor substrate, having
a photodetecting unit formed on one surface,
a recess, opposing the photodetecting unit, of another surface,
an outer edge surrounding the recess,
and first electrodes disposed on the one surface at the outer edge and electrically connected to the photodetecting unit;
a wiring substrate, disposed to oppose the one surface side of the semiconductor substrate and having second electrodes connected via conductive bumps to the first electrodes; and
a resin, filling a gap between the wiring substrate and the outer edge with the conductive bumps;
wherein the wiring substrate has a first region and second regions, the first region surrounding a region opposing the recess and the second regions extending outward from the first region, wherein the first region and the second regions have lower wettability with respect to the resin than the other regions of the wiring substrate, and
the resin surrounds the periphery of the gap between the recess and the wiring substrate except at the second regions that are portions of the periphery, thereby spaces not filled with the resin are formed above the second regions positioned between the semiconductor substrate and the wiring substrate.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein a silicone resin, a polytetrafluoroethylene, or a wax is coated onto the first region and the second regions of the wiring substrate.

### Claim 3 (depends on 1, 2)

The semiconductor device according to any of claim 1 or claim 2, wherein the photodetecting unit has a plurality of pixels that are arrayed one-dimensionally or two-dimensionally.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein the photodetecting unit has a plurality of pixels that are arrayed one-dimensionally.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein the photodetecting unit has a plurality of pixels that are arrayed two-dimensionally.