# US 7,612,403 B2 · Low power non-volatile memory and gate stack

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- Number: US 7,612,403 B2
- Document ID: US7612403B2
- Status: Granted
- Kind: B2
- Application number: 11/131,006
- Filed: 2005-05-17
- Published: 2006-11-23
- Granted: 2009-11-03
- Earliest claimed: 2005-05-17
- Assignees: Micron Technology, Inc.
- Inventors: Arup Bhattacharyya
- Web page: https://patentgrep.com/patent/US7612403B2

## CPC

- H10D 64/685: {being perpendicular to the channel plane}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- H10D 30/681: {having only two programming levels (Floating gate IGFETs programmable by two single electrons H10D30/688)}
- H10D 30/6893: {wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate}
- H10D 30/69: IGFETs having charge trapping gate insulators, e.g. MNOS transistors
- Y10S 438/954: Making oxide-nitride-oxide device
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

Non-volatile memory devices and arrays are described that facilitate the use of band-gap engineered gate stacks with asymmetric tunnel barriers in reverse and normal mode floating node memory cells in NOR or NAND memory architectures that allow for direct tunnel programming and erase, while maintaining high charge blocking barriers and deep carrier trapping sites for good charge retention. The low voltage direct tunneling program and erase capability reduces damage to the gate stack and the crystal lattice from high energy carriers, reducing write fatigue and enhancing device lifespan. The low voltage direct tunnel program and erase capability also enables size reduction through low voltage design and further device feature scaling. Memory cells of the present invention also allow multiple bit storage. These characteristics allow memory device embodiments of the present invention to operate within the definition of a universal memory, capable of replacing both DRAM and ROM in a system.

## Claims

### Claim 1

A non-volatile memory cell, comprising:
a first and second source/drain regions formed in a substrate coupled by a channel region;
an asymmetric band-gap tunnel insulator layer containing two or more sub-layers formed over the channel region and/or first and second source/drain regions, wherein the two or more sub-layers comprise layers of increasing conduction band offset;
a trapping layer formed over the tunnel insulator layer;
a charge blocking layer formed over the trapping layer; and
a control gate formed over the charge blocking layer;
wherein the two or more sub-layers are formed so that the two or more sub-layers increase in conduction band offset from the trapping layer to the channel region.

### Claim 2 (depends on 1)

The non-volatile memory cell of claim 1, wherein the two or more sub-layers of the tunnel insulator layer comprise two or more sub-layers of dielectric material of increasing conduction band offset, wherein each of the two or more sub-layers of dielectric material are selected from one of an oxide, a mixed oxide, a nitride, a oxynitride, a mixed oxynitride, and a silicate.

### Claim 3 (depends on 1)

The non-volatile memory cell of claim 1, wherein the two or more sub-layers of the tunnel insulator layer are selected from one of Al2O3, Pr2O3, TiO2, SiO2, HfO2, ZrO2, SiN, AlN, HfN, oxygen-rich SiON (refractive index of approximately 1.5), nitrogen-rich SiON (refractive index of approximately 1.8), mixed oxide of Hf and Al, a mixed oxide of Hf and Ti, a mixed oxide of Hf and Si, and a mixed oxynitride of Hf and Si.

### Claim 4 (depends on 2)

The non-volatile memory cell of claim 2, wherein the two or more sub-layers of the tunnel insulator layer comprise two sub-layers, where a first and second sub-layers are one of SiO2 and Pr2O3, SiO2 and TiO2, and SiO2 and HfO2.

### Claim 5 (depends on 2)

The non-volatile memory cell of claim 2, wherein the two or more sub-layers of the tunnel insulator layer comprise three sub-layers, where a first, second, and third sub-layers are one of SiO2, SiN, and HfO2; SiO2, HfO2, and Pr2O3; SiO2, HfO2, and TiO2; SiO2, oxygen-rich SiON (refractive index of approximately 1.5), and HfO2; and SiO2, Al2O3, and HfO2.

### Claim 6 (depends on 1)

The non-volatile memory cell of claim 1, wherein each of the two or more sub-layers of the tunnel insulator layer is arranged over the channel region in increasing values of dielectric constant (K) extending from the channel.

### Claim 7 (depends on 1)

The non-volatile memory cell of claim 1, wherein the trapping layer further comprises one of a floating gate, a floating node, and an embedded trapping layer.

### Claim 8 (depends on 7)

The non-volatile memory cell of claim 7, wherein the trapping layer further comprises one of oxygen-rich silicon oxy-nitride (SiON), nitrogen-rich silicon oxynitride (SiON), aluminum nitride (AlN), silicon nitride (SiN), silicon-rich nitride (SRN), hafnium oxide (HfO2), tantalum oxide (Ta2O5), and titanium oxide (TiO2).

### Claim 9 (depends on 1)

The non-volatile memory cell of claim 1, wherein the trapping layer further comprises charge trapping deep potential wells.

### Claim 10 (depends on 1)

The non-volatile memory cell of claim 1, wherein the trapping layer further comprises nano-crystals or nano-dots of metal, semiconductor, silicon, nitride, induced interface states, or charge trapping impurities.

### Claim 11 (depends on 10)

The non-volatile memory cell of claim 10, wherein the deep potential wells further comprise one of silicon, germanium, gold, tungsten, iridium, titanium, cobalt, platinum, and palladium nano-dots or nano-crystals.

### Claim 12 (depends on 1)

The non-volatile memory cell of claim 1, wherein the charge blocking layer comprises one or more sub-layers of high K dielectric.

### Claim 13 (depends on 12)

The non-volatile memory cell of claim 12, wherein each of the one or more sub-layers is from one of oxide, mixed oxide, nitride, oxynitride, mixed oxynitride, and silicate families.

### Claim 14 (depends on 13)

The non-volatile memory cell of claim 13, wherein each of the one or more sub-layers is one of hafnium oxide (HfO2), alumina (Al2O3), praseodymium oxide (Pr2O3), and titanium oxide (TiO2).

### Claim 15 (depends on 1)

The non-volatile memory cell of claim 1, wherein the charge blocking layer is adapted to allow for erasure the non-volatile memory cell by passing hole or electron charge carriers to or from the trapping layer.

### Claim 16 (depends on 1)

The non-volatile memory cell of claim 1, wherein the non-volatile memory cell is adapted to store two data values in the trapping layer.

### Claim 17 (depends on 1)

The non-volatile memory cell of claim 1, wherein the non-volatile memory cell is one of a NFET device and a PFET device.

### Claim 18 (depends on 1)

The non-volatile memory cell of claim 1, wherein the control gate is one of polysilicon, tungsten, iridium, and aluminum.

### Claim 19 (depends on 1)

The non-volatile memory cell of claim 1, wherein the control gate further comprises a passivation layer comprising one of HfN, TaN, IrO2, and TiN formed between the control gate and the charge blocking layer.

### Claim 20 (depends on 1)

The non-volatile memory cell of claim 1, wherein the channel region is formed of one of a N-doped region and a P-doped region.

### Claim 21

A non-volatile memory device, comprising:
a non-volatile memory array containing a plurality of non-volatile memory cells formed into rows and columns, wherein one or more of the plurality of non-volatile memory cells comprises,
a first and second source/drain regions formed in a substrate coupled by a channel region,
an asymmetric band-gap tunnel insulator layer containing two or more sub-layers formed over the channel region and/or first and second source/drain regions,
wherein the two or more sub-layers comprise layers of increasing band offset,
a trapping layer formed over the tunnel insulator layer,
a charge blocking layer formed over the trapping layer, and
a control gate formed over the charge blocking layer,
wherein the two or more sub-layers are formed so that the two or more sub-layers increase in conduction band offset from the trapping layer to the channel region;
a memory interface; and
a control circuit coupled to the memory interface and the non-volatile memory array.

### Claim 22 (depends on 21)

The non-volatile memory device of claim 21, wherein the two or more sub-layers of the tunnel insulator layer comprise two or more sub-layers of dielectric material of increasing band offset, wherein each of the two or more sub-layers of dielectric material are selected from one of an oxide, a mixed oxide, a nitride, a oxynitride, a mixed oxynitride, and a silicate.

### Claim 23 (depends on 21)

The non-volatile memory device of claim 21, wherein the two or more sub-layers of the tunnel insulator layer are selected from one of Al2O3, Pr2O3, TiO2, SiO2, HfO2, ZrO2, SiN, AlN, HfN, oxygen-rich SiON (refractive index of approximately 1.5), nitrogen-rich SiON (refractive index of approximately 1.8), mixed oxide of Hf and Al, a mixed oxide of Hf and Ti, a mixed oxide of Hf and Si, and a mixed oxynitride of Hf and Si.

### Claim 24 (depends on 22)

The non-volatile memory device of claim 22, wherein the two or more sub-layers of the tunnel insulator layer comprise two sub-layers, where a first and second sub-layers are one of SiO2 and Pr2O3, SiO2 and TiO2, and SiO2 and HfO2.

### Claim 25 (depends on 22)

The non-volatile device of claim 22, wherein the two or more sub-layers of the tunnel insulator layer comprise three sub-layers, where a first, second, and third sub-layers are one of SiO2, SiN, and HfO2; SiO2, HfO2, and Pr2O3; SiO2, HfO2, and TiO2; SiO2, oxygen-rich SiON (refractive index of approximately 1.5), and HfO2; and SiO2, Al2O3, and HfO2.

### Claim 26 (depends on 21)

The non-volatile device of claim 21, wherein each of the two or more sub-layers of the tunnel insulator layer is arranged over the channel region in increasing values of dielectric constant (K) and increasing tunneling distance.

### Claim 27 (depends on 21)

The non-volatile memory device of claim 21, wherein the trapping layer further comprises one of a floating gate, a floating node, and an embedded trapping layer.

### Claim 28 (depends on 27)

The non-volatile memory device of claim 27, wherein the trapping layer further comprises one of oxygen-rich silicon oxy-nitride (SiON), nitrogen-rich silicon oxy-nitride (SiON), aluminum nitride (AlN), silicon nitride (SiN), silicon-rich nitride (SRN), hafnium oxide (HfO2), tantalum oxide (Ta2O5), and titanium oxide (TiO2).

### Claim 29 (depends on 27)

The non-volatile memory device of claim 27, wherein the trapping layer further comprises deep energy trapping sites.

### Claim 30 (depends on 21)

The non-volatile memory device of claim 21, wherein the trapping layer further comprises nano-crystals or nano-dots of metal, semiconductor, silicon, nitride, induced interface states, or charge trapping impurities.

### Claim 31 (depends on 30)

The non-volatile memory device of claim 30, wherein the deep potential wells further comprise one of gold, tungsten, iridium, silicon, germanium, cobalt, platinum, titanium, and palladium nano-dots or nano-crystals.

### Claim 32 (depends on 21)

The non-volatile memory device of claim 21, wherein the charge blocking layer comprises one or more sub-layers of high K dielectric.

### Claim 33 (depends on 32)

The non-volatile memory device of claim 32, wherein each of the one or more sub-layers is one of hafnium oxide (HfO2), alumina (Al2O3), praseodymium oxide (Pr2O3), and titanium oxide (TiO2).

### Claim 34 (depends on 21)

The non-volatile memory device of claim 21, wherein the non-volatile memory cells are adapted to store two data values in the trapping layer.

### Claim 35 (depends on 21)

The non-volatile memory device of claim 21, wherein the non-volatile memory device is adapted to erase the non-volatile memory cells by direct tunneling, Fowler-Nordheim tunneling, channel hot electron (CHE), or hot hole injection of carriers from the substrate through the asymmetric band-gap tunnel insulator layer.

### Claim 36 (depends on 21)

The non-volatile memory device of claim 21, wherein the non-volatile memory device is adapted to program and erase the non-volatile memory cells in erase blocks, each erase block containing a plurality of memory cells.

### Claim 37 (depends on 21)

The non-volatile memory device of claim 21, wherein the control gate is one of polysilicon, tungsten, iridium, and aluminum.

### Claim 38 (depends on 21)

The non-volatile memory device of claim 21, wherein the control gate further comprises a passivation layer comprising one of HfN, TaN, IrO2, and TiN formed between the control gate and the charge blocking layer.

### Claim 39 (depends on 21)

The non-volatile memory device of claim 21, wherein the interface is a synchronous memory interface.

### Claim 40 (depends on 21)

The non-volatile memory device of claim 21, wherein the non-volatile memory device is adapted to cache write data in a write cache while the data is being written to the memory array.

### Claim 41 (depends on 21)

The non-volatile memory device of claim 21, wherein the plurality of non-volatile memory cells of the memory array are further arranged into one of a NOR architecture memory array and a NAND architecture memory array.

### Claim 42

A system, comprising:
a processor coupled to at least one non-volatile memory device, wherein the at least one non-volatile memory device comprises,
a non-volatile memory array containing a plurality of non-volatile memory cells formed into rows and columns, wherein one or more of the plurality of non-volatile memory cells comprises,
a first and second source/drain regions formed in a substrate coupled by a channel region,
an asymmetric band-gap tunnel insulator layer containing two or more sub-layers formed over the channel region and/or first and second source/drain regions,
wherein the two or more sub-layers comprise layers of increasing conduction band offset,
a trapping layer formed over the tunnel insulator layer,
a charge blocking layer formed over the trapping layer, and
a control gate formed over the charge blocking layer,
wherein the two or more sub-layers are formed so that the two or more sub-layers sequentially increase in conduction band offset from the trapping layer to the channel region;
a memory interface; and
a control circuit coupled to the memory interface and the non-volatile memory array.

### Claim 43 (depends on 42)

The system of claim 42, wherein the two or more sub-layers of the tunnel insulator layer comprise two or more sub-layers of dielectric material of increasing conduction band offset, wherein each of the two or more sub-layers of dielectric material are selected from one of an oxide, a mixed oxide, a nitride, a oxynitride, a mixed oxynitride, and a silicate.

### Claim 44 (depends on 43)

The system of claim 43, wherein the two or more sub-layers of the tunnel insulator layer comprise two sub-layers, where a first and second sub-layers are one of SiO2 and Pr2O3, SiO2 and TiO2, and SiO2 and HfO2.

### Claim 45 (depends on 43)

The system of claim 43, wherein the two or more sub-layers of the tunnel insulator layer comprise three sub-layers, where a first, second, and third sub-layers are one of SiO2, SiN, and HfO2; SiO2, HfO2, and Pr2O3; SiO2, HfO2, and TiO2; SiO2, oxygen-rich SiON (refractive index of approximately 1.5), and HfO2; and SiO2, Al2O3, and HfO2.

### Claim 46 (depends on 42)

The system of claim 42, wherein each of the two or more sub-layers of the tunnel insulator layer is arranged over the channel region in increasing values of dielectric constant (K).

### Claim 47 (depends on 43)

The system of claim 43, wherein the trapping layer further comprises one of a floating gate, a floating node, and an embedded trapping layer.

### Claim 48 (depends on 47)

The system of claim 47, wherein the trapping layer further comprises one of oxygen-rich silicon oxy-nitride (SiON), nitrogen-rich silicon oxy-nitride (SiON), aluminum nitride (AlN), silicon nitride (SiN), silicon-rich nitride (SRN), hafnium oxide (HfO2), tantalum oxide (Ta2O5), and titanium oxide (TiO2).

### Claim 49 (depends on 42)

The system of claim 42, wherein the trapping layer further comprises charge trapping deep potential wells.

### Claim 50 (depends on 42)

The system of claim 42, wherein the trapping layer further comprises nano-crystals or nano-dots of metal, semiconductor, silicon, nitride, induced interface states, or charge trapping impurities.

### Claim 51 (depends on 50)

The system of claim 50, wherein the deep potential wells further comprise one of silicon, germanium, gold, tungsten, iridium, titanium, cobalt, platinum, and palladium nano-dots or nano-crystals.

### Claim 52 (depends on 42)

The system of claim 42, wherein the charge blocking layer comprises one or more layers of high dielectric K insulator, where each of the one or more layers is one of hafnium oxide (HfO2), alumina (Al2O3), Pr2O3, and titanium oxide (TiO2).

### Claim 53 (depends on 42)

The system of claim 42, wherein the non-volatile memory cells are adapted to store two data values in the trapping layer.

### Claim 54 (depends on 42)

The system of claim 42, wherein the control gate is one of polysilicon, tungsten, iridium, and aluminum.

### Claim 55 (depends on 42)

The system of claim 42, wherein the control gate further comprises a passivation layer comprising one of HfN, TaN, IrO2, and TiN formed between the control gate and the charge blocking layer.

### Claim 56 (depends on 42)

The system of claim 42, wherein the interface is a synchronous memory interface.

### Claim 57 (depends on 42)

The system of claim 42, wherein the plurality of non-volatile memory cells of the memory array are further arranged into one of a NOR architecture memory array and a NAND architecture memory array.

### Claim 58 (depends on 42)

The system of claim 42, wherein the system is adapted to utilize the non-volatile memory as a universal memory and fulfill the short term and long term storage function of both volatile memory (RAM) and non-volatile memory (ROM).

### Claim 59 (depends on 42)

The system of claim 42, wherein the system is adapted to access the non-volatile memory with one of read caching, write caching, memory interleaving, and a multi-level memory structure.