# US 7,612,398 B2 · Semiconductor storage device and method of manufacturing the same

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- Number: US 7,612,398 B2
- Document ID: US7612398B2
- Status: Granted
- Kind: B2
- Application number: 10/931,193
- Filed: 2004-09-01
- Published: 2006-01-05
- Granted: 2009-11-03
- Earliest claimed: 2004-07-02
- Assignees: Kabushiki Kaisha Toshiba
- Inventors: Yoshinori Kumura; Yoshiro Shimojo; Iwao Kunishima; Tohru Ozaki
- Web page: https://patentgrep.com/patent/US7612398B2

## CPC

- G11C 11/22: using ferroelectric elements
- H10B 53/00: Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B 53/30: characterised by the memory core region
- H10D 1/688: {comprising barrier layers to prevent diffusion of hydrogen or oxygen}
- H10D 1/694: {comprising noble metals or noble metal oxides}
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor storage device wherein a plurality of ferroelectric capacitors are sufficiently covered with a hydrogen barrier film formed thereon comprises a field effect transistor formed on one surface side of a semiconductor substrate, a plurality of ferroelectric capacitors formed close to each other above the field effect transistor, an insulting film configured to cover the plurality of ferroelectric capacitors and planarised a space between adjacent ferroelectric capacitors in a self-aligned manner during formation thereof, and a hydrogen barrier film formed on the insulating film.

## Claims

### Claim 1

A semiconductor storage device comprising:
at least one field effect transistor formed on one surface side of a semiconductor substrate;
a first hydrogen barrier film formed above the field effect transistor;
a capacitor array comprising a plurality of ferroelectric capacitors formed close to each other above the first hydrogen barrier film;
a single insulating film configured to cover the entire top portion of the capacitor array, to planarize a space between adjacent ferroelectric capacitors by continuously disposing the single insulating film inside the capacitor array, and to contact with the first hydrogen barrier film between the adjacent ferroelectric capacitors;
a second hydrogen barrier film formed on the insulating film and being brought into contact with the first hydrogen barrier film outside of the capacitor array; and
a transistor-capacitor parallel unit in which said at least one field effect transistor and one ferroelectric capacitor are connected in parallel.

### Claim 2 (depends on 1)

The semiconductor storage device according to claim 1, wherein each of the ferroelectric capacitors comprises a lower electrode, a capacitive insulating film, and an upper electrode, wherein the lower electrode is connected to one source/drain of the field effect transistor, and the upper electrode is connected to the other source/drain of the field effect transistor and an upper electrode of another ferroelectric capacitor adjacent to the ferroelectric capacitor.

### Claim 3 (depends on 1)

The semiconductor storage device according to claim 1, wherein the insulating film selectively planarizes space(s) having larger aspect ratio among spaces between the adjacent ferroelectric capacitors in a self-aligned manner.

### Claim 4

A semiconductor storage device comprising:
at least one field effect transistor formed on one surface side of a semiconductor substrate;
a first insulating film formed to cover the field effect transistor;
a capacitor array comprising a plurality of ferroelectric capacitors formed close to each other above the first insulating film;
a single second insulating film configured to cover the entire top portion of the capacitor array, to planarize a space between adjacent ferroelectric capacitors by continuously disposing the single insulating film inside the capacitor array, and to contact with the first insulating film between the adjacent ferroelectric capacitors;
a hydrogen barrier film formed on the second insulating film; and
said field effect transistor and a ferroelectric capacitor of said array of ferroelectric capacitors are connected in parallel to form a transistor-capacitor parallel unit,
a transistor-capacitor parallel unit in which said at least one field effect transistor and one ferroelectric capacitor are connected in parallel.

### Claim 5 (depends on 4)

The semiconductor storage device according to claim 4, wherein each of the ferroelectric capacitors comprises a lower electrode, a capacitive insulating film, and an upper electrode, wherein the lower electrode is connected to one source/drain of the field effect transistor, and the upper electrode is connected to the other source/drain of the field effect transistor and an upper electrode of another ferroelectric capacitor adjacent to the ferroelectric capacitor.

### Claim 6 (depends on 4)

The semiconductor storage device according to claim 4, wherein the insulating film selectively planarizes space(s) having larger aspect ratio (ratio of depth/space) among spaces between the adjacent ferroelectric capacitors in a self-aligned manner.