# US 7,612,393 B2 · Active photosensitive structure with buried depletion layer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,612,393 B2 - Document ID: US7612393B2 - Status: Granted - Kind: B2 - Application number: 11/653,860 - Filed: 2007-01-17 - Published: 2007-05-24 - Granted: 2009-11-03 - Earliest claimed: 2004-08-30 - Assignees: Micron Technology, Inc. - Inventors: Dmitri Jerdev; Nail Khaliullin - Web page: https://patentgrep.com/patent/US7612393B2 ## CPC - H10F 39/196: {Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors} - H10F 30/2863: {Field-effect phototransistors having PN homojunction gates} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. During an integration period, incident light causes electrons to be accumulated inside the buried accumulation region. The resistance characteristic of the channel region changes in response to a field created by the charges accumulated in the accumulation region. Thus, when a voltage is applied to one side of the channel, the current read out from the other side is characteristic of the amount of stored charges. ## Claims ### Claim 1 A method of operating a pixel sensor cell comprising: accumulating charges in a pixel sensor cell during an integration period, the pixel sensor cell comprising a photosensitive JFET region for generating and storing charges during the integration period, wherein the JFET region comprises a collection region for collecting the generated charges within a gate of the JFET and a channel region having a changeable resistance that changes depending on the amount of charges collected in the collection region; applying a pre-determined voltage to a first terminal coupled to the channel region of the pixel sensor cell; and measuring the resistance of the channel region to determine a value representing the amount of charges collected in the collection region. ### Claim 2 (depends on 1) The method of claim 1, wherein the step of measuring the resistance is performed at an end of an integration period. ### Claim 3 (depends on 1) The method of claim 1, wherein the step of measuring the resistance is performed during an integration period. ### Claim 4 The method of 1, wherein said step of measuring the resistance comprises obtaining a signal at a second terminal from the channel region and selectively applying said signal to a row select transistor. ### Claim 5 (depends on 1) The method of claim 1, further comprising the step of draining the collected charges from the collection region, said drained collection region representing a reset condition for the pixel cell. ### Claim 6 (depends on 5) The method of claim 5, wherein said step of draining comprises operating a reset transistor to drain the charges from the collection region into a drain region. ### Claim 7 (depends on 5) The method of claim 5, wherein the step of measuring the resistance comprises reading out a reset current representing the reset condition. ### Claim 8 (depends on 7) The method of claim 7, wherein the method further comprises performing a second step of determining the value subsequent to said reset readout. ### Claim 9 (depends on 1) The method of claim 1, further comprising the step of continuously performing a readout of the value. ### Claim 10 (depends on 1) The method of claim 1, further comprising the step of performing a plurality of readouts of the determined value at pre-determined intervals. ### Claim 11 (depends on 1) The method of claim 1, further comprising the step of performing an automatic light control operation in order to determine a time for reading out said value. ### Claim 12 A method of operating a photosensor, comprising: generating charges in response to light striking a photosensor region; accumulating the generated charges in a JFET gate region formed in a substrate; determining a resistance of a JFET channel region located in the substrate and above said accumulation region, said JFET channel region having a resistance that changes in response to the accumulated charges accumulated in said JFET accumulation region. ### Claim 13 A method of operating a pixel sensor cell, comprising: generating charges in response to applied light reaching a photosensitive element formed in a substrate; accumulating the generated charges in a charge accumulation region buried beneath a top surface of the substrate; and determining a resistance of a JFET channel region located beneath said top surface of the substrate but above said charge accumulation region, said JFET channel region having a changeable resistance dependent upon the charges in the accumulation region; and producing a signal based on the resistance of said JFET channel region. ### Claim 14 (depends on 13) The method of claim 13, wherein said charge accumulation region includes a JFET gate region for controlling said JFET channel region. ### Claim 15 (depends on 14) The method of claim 14, further comprising: providing a continuous readout of a signal representing a resistance from said JFET channel region. ### Claim 16 (depends on 13) The method of claim 13, further comprising: applying a voltage to a first contact over and adjacent a first side of said JFET channel region; and taking a readout signal from a second contact over and adjacent a second side of said JFET channel region. ### Claim 17 (depends on 16) The method of claim 16, wherein said second contact is electrically connected to a row select transistor. ### Claim 18 (depends on 13) The method of claim 13, further comprising: resetting the charges in said accumulation region. ### Claim 19 (depends on 13) The method of claim 13, further comprising: receiving at least a first signal representing the resistance of said JFET channel region at a reset condition and a second signal representing the resistance of said JFET channel region at the end of an integration period. ### Claim 20 A method of operating a pixel sensor cell, comprising: generating charges in response to applied light reaching a photosensitive element formed at least partially in a substrate; accumulating the generated charges in a charge accumulation region comprising a JFET gate region buried beneath a top surface of the substrate; and determining a resistance of a JFET channel region located beneath the top surface of the substrate but over said JFET gate region, said JFET channel region having a resistance characteristic that changes in response to the amount of charge accumulated in said JFET gate region; reading out a signal from a first contact electrically connected to said JFET channel region, the signal representing a current flowing through the JFET channel region; and draining the accumulated charges from said charge accumulation region to a drain region.