# US 7,612,388 B2 · Power semiconductor element with an emitter region and a stop zone in front of the emitter region

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- Number: US 7,612,388 B2
- Document ID: US7612388B2
- Status: Granted
- Kind: B2
- Application number: 09/761,240
- Filed: 2001-01-17
- Published: 2001-06-28
- Granted: 2009-11-03
- Earliest claimed: 1998-07-17
- Assignees: Infineon Technologies AG
- Inventors: Josef-Georg Bauer; Heinrich Brunner; Hans-Joachim Schulze
- Web page: https://patentgrep.com/patent/US7612388B2

## CPC

- H10D 12/441: {Vertical IGBTs}
- H10D 18/40: with turn-on by field effect
- H10D 18/655: {produced by insulated gate structures}
- H10D 62/199: {Anode base regions of thyristors}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The power semiconductor element has an emitter region and a stop zone in front of the emitter region. The conductivities of the emitter region and of the stop zone are opposed to one another. In order to reduce not only the static but also the dynamic loss of the power semiconductor foreign atoms are used in the stop-zone. The foreign atoms have at least one energy level within the band gap of the semiconductor and at least 200 meV away from the conduction band and valence band of the semiconductor.

## Claims

### Claim 1

A power semiconductor element, comprising:
an emitter region; and
a stop zone in front of said emitter region, the stop zone and said emitter region having mutually opposite conductivities, the stop zone including sulfur atoms with at least one energy level within the band gap of the semiconductor and at least 200 meV away from both a conduction band and a valence band of the semiconductor, the stop zone having a doping profile of sulfur atoms such that the stop zone is only partially electrically active in the on-state and fully electrically active in the off-state for carriers emitted by the emitter region.

### Claim 2

A power semiconductor element, comprising:
an emitter region; and
a stop zone in front of said emitter region, the stop zone and said emitter region having mutually opposite conductivities, the stop zone including selenium atoms with at least one energy level within the band gap of the semiconductor and at least 200 meV away from both a conduction band and a valence band of the semiconductor, the stop zone having a doping profile of selenium atoms such that the stop zone is only partially electrically active in the on-state and fully electrically active in the off-state for carriers emitted by the emitter region.