# US 7,612,387 B2 · Thyristor optimized for a sinusoidal HF control

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- Number: US 7,612,387 B2
- Document ID: US7612387B2
- Status: Granted
- Kind: B2
- Application number: 11/639,754
- Filed: 2006-12-15
- Published: 2007-06-21
- Granted: 2009-11-03
- Earliest claimed: 2005-12-16
- Assignees: STMicroelectronics S.r.l.
- Inventors: Christophe Mauriac; Samuel Menard
- Web page: https://patentgrep.com/patent/US7612387B2

## CPC

- H10D 64/64: Electrodes comprising a Schottky barrier to a semiconductor
- H10D 18/221: {having amplifying gate structures, e.g. cascade configurations}
- H10D 84/135: {the built-in components being diodes}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A vertical thyristor adapted to an HF control, including a cathode region in a P-type base well, a lightly-doped P-type layer next to the base well, a lightly-doped N-type region in the lightly-doped P-type layer, a Schottky contact on the lightly-doped N-type region connected to a control terminal, and a connection between the lightly-doped N-type region and the P-type base well.

## Claims

### Claim 1

A vertical thyristor adapted to an HF control, comprising a cathode region in a P-type base well, and comprising:
a lightly-doped P-type layer next to the base well,
a lightly-doped N-type region in said lightly-doped P-type layer,
a Schottky contact on the lightly-doped N-type region connected to a control terminal, and
a connection between the lightly-doped N-type region and the P-type base well, wherein the connection between the lightly-doped N-type region and the P-type base well is formed via a more heavily-doped N-type region formed in the lightly-doped N-type region.

### Claim 2 (depends on 1)

The thyristor of claim 1, wherein the lightly-doped P-type layer also extends under the periphery of the base well.

### Claim 3 (depends on 1)

The thyristor of claim 1, formed from a lightly-doped N-type substrate, wherein the doping level of the substrate is on the order of 1014 at./cm3, the doping level of the lightly-doped P-type layer is on the order of 1015 at./cm3, and the doping level of the lightly-doped N-type region is on the order of 1016 at./cm3.

### Claim 4

A vertical thyristor comprising:
a semiconductor substrate;
an anode region on a rear surface of the semiconductor substrate;
a cathode region in a P-type base well on a front surface of the semiconductor substrate;
a lightly-doped P-type layer next to the P-type base well;
a lightly-doped N-type region in the lightly-doped P-type layer;
a Schottky contact on the lightly-doped N-type region, the Schottky contact connected to a control terminal; and
a connection between the lightly-doped N-type region and the P-type base well, wherein the connection between the lightly-doped N-type region and the P-type base well includes a more heavily-doped N-type region in the lightly-doped N-type region.