# US 7,612,381 B2 · Method for fabricating a semiconductor device and semiconductor device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 7,612,381 B2
- Document ID: US7612381B2
- Status: Granted
- Kind: B2
- Application number: 11/710,744
- Filed: 2007-02-26
- Published: 2007-06-28
- Granted: 2009-11-03
- Earliest claimed: 2004-08-31
- Assignees: Meijo University
- Inventors: Satoshi Kamiyama; Hiroshi Amano; Motoaki Iwaya; Isamu Akasaki; Hideki Kasugai
- Web page: https://patentgrep.com/patent/US7612381B2

## CPC

- H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers
- H10H 20/032: {of electrodes}
- H10H 20/831: characterised by their shape
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.

## Claims

### Claim 1

A semiconductor device, comprising:
a translucent portion having a first semiconductor layer that has a first side and a second side;
the first side of the first semiconductor layer is comprised of a first uniformly distributed periodic structure;
a light emitting portion that contacts the first side and is comprised of:
a thin coating of low temperature deposition buffer layer deposited onto the first side that mimics and parallels the first uniformly distributed periodic structure;
the low temperature deposition buffer layer includes a second buffer side that contacts the first side of the first semiconductor layer, forming a second uniformly distributed periodic structure;
the low temperature deposition buffer layer further includes a first buffer side forming a third uniformly distributed periodic structure, with the first buffer side contacting a second cladding side of a cladding layer, with the second cladding side forming a fourth uniformly distributed periodic structure as a result of contact with the first buffer side of the low temperature deposition buffer layer;
a light emitting layer that contacts a first cladding side of the cladding layer;
a barrier layer that contacts the light emitting layer;
a contact layer that contacts the barrier layer;
a p-electrode that contacts the contact layer; and
a n-electrode that contacts the second side of the first semiconductor layer;
with the first, the second, the third, and the fourth uniformly distributed periodic structure having an effective refractive index that converges gradually towards a second refractive index from a first refractive index as light emitted advances and penetrates more deeply in a height direction of one uniformly distributed periodic structure towards another uniformly distributed periodic structure, which improves transmittance of light by suppressing variations in first and second refractive indexes;
with light ultimately extracted from the second side of the first semiconductor layer.