# US 7,612,369 B2 · Memory device having a semiconducting polymer film

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- Number: US 7,612,369 B2
- Document ID: US7612369B2
- Status: Granted
- Kind: B2
- Application number: 11/223,219
- Filed: 2005-09-09
- Published: 2006-06-08
- Granted: 2009-11-03
- Earliest claimed: 2002-06-14
- Assignees: Hewlett-Packard Development Company, L.P.
- Inventors: James Stasiak
- Web page: https://patentgrep.com/patent/US7612369B2

## CPC

- G11C 11/34: using semiconductor devices
- G11C 13/0014: {comprising cells based on organic memory material}
- G11C 13/0016: {comprising polymers}
- G11C 13/0069: {Writing or programming circuits or methods}
- H10K 19/202: {Integrated devices comprising a common active layer}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- G11C 2013/009: {Write using potential difference applied between cell electrodes}
- G11C 2213/77: Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
- G11C 2213/81: Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
- H10K 85/146: {poly N-vinylcarbazol; Derivatives thereof}
- H10K 85/311: {Phthalocyanine}
- H10K 85/40: Organosilicon compounds, e.g. TIPS pentacene
- H10K 85/60: Organic compounds having low molecular weight (H10K85/10 - H10K85/50 take precedence)
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

A memory device includes a semiconducting polymer film, which includes an organic dopant. The semiconducting polymer film has a first side and a second side. The memory device also includes a first plurality of electrical conductors substantially parallel to each other coupled to the first side of the semiconducting polymer layer, and a second plurality of electrical conductors substantially parallel to each other, coupled to the second side of the semiconducting polymer layer. The first and second pluralities of electrical conductors are substantially mutually orthogonal to each other. Further, an electrical charge is localized on the organic dopant.

## Claims

### Claim 1

A memory device comprising:
means for storing digital information utilizing a semiconducting polymer film having mono-substituted diphenylhydrazone;
means for supplying electrical energy to said polymer film;
means for generating localized electrical charge in said polymer film;
means for measuring said localized electrical charge; and
means for erasing said localized electrical charge.

### Claim 2 (depends on 1)

The memory device in accordance with claim 1, wherein said means for measuring said localized electrical charge further comprises means for measuring the transient response of the polarization current.

### Claim 3 (depends on 1)

The memory device in accordance with claim 1, wherein said means for supplying electrical energy further comprises means for applying a transient electric field across a first side and a second side of said semiconducting polymer film for a predetermined time and a predetermined magnitude.

### Claim 4 (depends on 1)

The memory device in accordance with claim 1, wherein said means for erasing said localized electrical charge further comprises means for exposing said semiconducting polymer film to light.

### Claim 5 (depends on 1)

The memory device in accordance with claim 1, wherein said means for erasing said localized electrical charge further comprises means for applying an erasing voltage across said semiconducting polymer film.

### Claim 6 (depends on 1)

The memory device in accordance with claim 1, wherein said means for generating localized electrical charge further comprises means for applying a writing voltage across said semiconducting polymer film.

### Claim 7 (depends on 1)

The memory device in accordance with claim 1, wherein said means for measuring said localized electrical charge further comprises means for applying a voltage impulse across said semiconductor polymer film for a predetermined time and a predetermined magnitude and means for measuring the transient response of the polarization current.

### Claim 8

A memory device comprising:
means for storing digital information in a semiconducting polymer film having mono-substituted diphenyihydrazone dispersed therein as an organic dopant;
means for supplying electrical energy to said polymer film;
means for generating localized electrical charge in said semiconducting polymer film;
means for measuring said localized electrical charge; and
means for erasing said localized electrical charge.