# US 7,612,361 B2 · Method of growing a nitride single crystal on silicon wafer, nitride semiconductor light emitting diode manufactured using the same and the manufacturing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,612,361 B2 - Document ID: US7612361B2 - Status: Granted - Kind: B2 - Application number: 11/826,874 - Filed: 2007-07-19 - Published: 2008-01-31 - Granted: 2009-11-03 - Earliest claimed: 2006-07-25 - Assignees: Samsung Electro-Mechanics Co., Ltd.; Ioffe Physico-Technical Institute Ras - Inventors: Hee Seok Park; Zhilyaev Yuri Vasilievich; Bessolov Vasiliy Nikolaevich - Web page: https://patentgrep.com/patent/US7612361B2 ## CPC - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10P 14/2905: {Silicon, silicon germanium or germanium} - H10P 14/3216: {Nitrides} - H10P 14/3238: {being insulating materials} - H10P 14/3251: {consisting of three or more layers} - H10P 14/3416: {Nitrides} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract The invention provides a method for growing a nitride single crystal on a silicon wafer and a method for manufacturing a light emitting device using the same. In growing the nitride single crystal according to one aspect of the invention, first, a silicon substrate having a surface in (111) crystal orientation is prepared. A first nitride buffer layer is formed on the surface of the silicon substrate. Then, an amorphous oxide film is disposed on the first nitride buffer layer. A second buffer layer is disposed on the amorphous oxide film. Thereafter, the nitride single crystal is formed on the second nitride buffer layer. ## Claims ### Claim 1 A method for growing a nitride single crystal comprising steps of: preparing a silicon substrate having a surface in (111) crystal orientation; forming a first nitride buffer layer on the surface of the silicon substrate; forming an amorphous oxide film on the first nitride buffer layer; forming a second nitride buffer layer on the amorphous oxide film; and forming the nitride single crystal on the second nitride buffer layer, wherein the amorphous oxide film is an Al2O3 amorphous film and the first buffer layer comprises AlN. ### Claim 2 (depends on 1) The method according to claim 1, wherein the amorphous oxide film has a thickness of about 5 nm to 30 nm. ### Claim 3 (depends on 1) The method according to claim 1, wherein the second nitride buffer layer has a composition expressed by AlxInyGa(1-x-y)N, where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1. ### Claim 4 (depends on 1) The method according to claim 1, wherein the second buffer layers comprises AlN. ### Claim 5 (depends on 1) The method according to claim 1, wherein the first and second nitride buffer layers have an identical composition. ### Claim 6 (depends on 1) The method according to claim 1, wherein the first nitride buffer layer has a thickness of at least 10 nm. ### Claim 7 (depends on 1) The method according to claim 1, wherein the second nitride buffer layer has a thickness of about 30 nm to 200 nm. ### Claim 8 (depends on 1) The method according to claim 1, wherein the nitride single crystal forming step is carried out via HVPE. ### Claim 9 A nitride semiconductor light emitting device comprising: a silicon substrate having a surface in (111) crystal orientation; a first nitride buffer layer formed on the surface of the silicon substrate; an amorphous oxide film formed on the first nitride buffer layer; a second nitride buffer layer formed on the amorphous oxide film; a first conductivity-type nitride semiconductor layer formed on the second nitride buffer layer; an active layer formed on the first conductivity-type nitride semiconductor layer; and a second conductivity-type nitride semiconductor layer formed on the active layer, wherein the amorphous oxide film is an Al2O3 amorphous film and the first buffer layer comprises AlN. ### Claim 10 (depends on 9) The nitride semiconductor light emitting device according to claim 9, wherein the amorphous oxide film is patterned such that the first buffer layer directly contacts the second nitride buffer layer in a partial area of the amorphous oxide film. ### Claim 11 (depends on 9) The nitride semiconductor light emitting device according to claim 9, wherein the amorphous oxide film has a thickness of about 5 nm to 30 nm. ### Claim 12 (depends on 9) The nitride semiconductor light emitting device according to claim 9, wherein the second nitride buffer layers has a composition expressed by AlxInyGa(1-x-y)N, where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1. ### Claim 13 (depends on 9) The nitride semiconductor light emitting device according to claim 9, wherein the second nitride buffer layers comprises AlN. ### Claim 14 (depends on 9) The nitride semiconductor light emitting device according to claim 9, wherein the first nitride buffer layer has a thickness of at least 10 nm. ### Claim 15 (depends on 9) The nitride semiconductor light emitting device according to claim 9, wherein the second nitride buffer layer has a thickness of about 30 nm to 200 nm. ### Claim 16 A method for manufacturing a nitride semiconductor light emitting device comprising steps of: preparing a silicon substrate having a surface in (111) crystal orientation; forming a first nitride buffer layer on the surface of the silicon substrate; forming an amorphous oxide film on the first nitride buffer layer; forming a second nitride buffer layer on the amorphous oxide film; forming a first conductivity-type nitride semiconductor layer on the second nitride buffer layer; forming an active layer on the first conductivity-type nitride semiconductor layer; and forming a second conductivity-type nitride semiconductor layer on the active layers, wherein the amorphous oxide film is an Al2O3 amorphous film and the first buffer layer comprises AlN. ### Claim 17 (depends on 16) The method according to claim 16, wherein the amorphous oxide film is patterned such that the first buffer layer directly contacts the second buffer layer in a partial area of the amorphous oxide film. ### Claim 18 (depends on 16) The method according to claim 16, wherein the amorphous oxide film has a thickness of about 5 nm to 30 nm. ### Claim 19 (depends on 16) The method according to claim 16, wherein the first nitride buffer layer has a thickness of at least 10 nm. ### Claim 20 (depends on 16) The method according to claim 16, wherein the second nitride buffer layer has a thickness of about 30 nm to 200 nm.