# US 7,612,358 B2 · Nonvolatile nanochannel memory device using mesoporous material

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- Number: US 7,612,358 B2
- Document ID: US7612358B2
- Status: Granted
- Kind: B2
- Application number: 11/237,891
- Filed: 2005-09-29
- Published: 2006-08-10
- Granted: 2009-11-03
- Earliest claimed: 2005-02-07
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Won Jae Joo; Jin Heong Yim; Kwang Hee Lee; Sang Kyun Lee
- Web page: https://patentgrep.com/patent/US7612358B2

## CPC

- H10K 10/701: {Organic molecular electronic devices}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- H10D 48/366: {Multistable devices; Devices having two or more distinct operating states}
- H10D 62/118: {Nanostructure semiconductor bodies}
- H10D 62/121: {oriented parallel to substrates}
- H10N 70/021: {Formation of switching materials, e.g. deposition of layers}
- H10N 70/026: {by physical vapor deposition, e.g. sputtering}
- H10N 70/20: Multistable switching devices, e.g. memristors
- H10N 70/245: {the species being metal cations, e.g. programmable metallization cells}
- H10N 70/841: {Electrodes}
- H10N 70/883: {Oxides or nitrides}
- H10N 70/8833: {Binary metal oxides, e.g. TaOx}
- H10K 85/221: {Carbon nanotubes}
- H10K 85/615: {Polycyclic condensed aromatic hydrocarbons, e.g. anthracene}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A nonvolatile nanochannel memory device using a mesoporous material. Specifically, a memory device is composed of a mesoporous material that is able to form nanochannels, in which a memory layer having metal nanoparticles or metal ions fed into the nanochannels is disposed between an upper electrode and a lower electrode. Thus, the memory device has high processability, and manifests excellent reproducibility and uniform performance.

## Claims

### Claim 1

A memory device comprising:
a first electrode;
a second electrode; and
a memory layer disposed between the first and second electrodes, wherein the memory layer includes a mesoporous material and nanochannels, the nanochannels being comprised of metal nanoparticles or metal ions, and the memory layer showing bistable resistance values; and
a barrier layer disposed between the memory layer and the second electrode to control the concentration and distribution of the metal nanoparticles or metal ions in the nanochannels,
wherein the barrier layer is formed on top of the nanochannels of the memory device, the barrier layer being configured such that the metal nanoparticles or metal ions can be fed into the nanochannels through the barrier layer.

### Claim 2 (depends on 1)

The memory device as set forth in claim 1, wherein the mesoporous material is an organic material, an inorganic material, or an organic-inorganic composite.

### Claim 3 (depends on 1)

The memory device as set forth in claim 1, wherein the mesoporous material is an inorganic material.

### Claim 4 (depends on 3)

The memory device as set forth in claim 3, wherein the inorganic material is at least one selected from the group consisting of TiO2, ZnO, CuO, SiO2, Al2O3, and mixtures thereof.

### Claim 5 (depends on 1)

The memory device as set forth in claim 1, wherein the nanochannels have a size from 0.5 to 100 nm in diameter.

### Claim 6 (depends on 1)

The memory device as set forth in claim 1, wherein the memory layer is formed by subjecting the mesoporous material to thermal deposition, sputtering, e-beam evaporation, spin coating, inkjet printing, or roll-to-roll coating.

### Claim 7 (depends on 1)

The memory device as set forth in claim 1, wherein the memory layer has a thickness ranging from 10 nm to 100 μm.

### Claim 8 (depends on 1)

The memory device as set forth in claim 1, wherein the metal nanoparticles or metal ions are nanoparticles or ions of a metal selected from the group consisting of aluminum, gold, silver, platinum, and indium tin oxide.

### Claim 9 (depends on 1)

The memory device as set forth in claim 1, wherein the metal nanoparticles have a size of 10 nm or less in diameter.

### Claim 10 (depends on 1)

The memory device as set forth in claim 1, wherein the metal nanoparticles or metal ions are fed into the nanochannels using thermal deposition.

### Claim 11 (depends on 10)

The memory device as set forth in claim 10, wherein the metal nanoparticles or metal ions are fed into the nanochannels via metal diffusion while depositing the upper electrode using thermal deposition.

### Claim 12 (depends on 1)

The memory device as set forth in claim 1, wherein the barrier layer is formed of a material selected from the group consisting of a conductive polymer, a nonconductive polymer, a mesoporous material different from the mesoporous material used in the memory layer, and an organic monomer or an inorganic material able to be formed into a thin film using thermal deposition.

### Claim 13 (depends on 11)

The memory device as set forth in claim 11, wherein the barrier layer is formed of a material selected from the group consisting of a conductive polymer, a nonconductive polymer, a mesoporous material different from the mesoporous material used in the memory layer, and an organic monomer or an inorganic material able to be formed into a thin film using thermal deposition.

### Claim 14 (depends on 12)

The memory device as set forth in claim 12, wherein the conductive polymer is at least one homopolymer or copolymer selected from the group consisting of poly(n-vinylpyridine), poly(dimethylsiloxane), poly(ethylene-oxide), poly(acrylic acid), poly(methylacrylic acid), poly(styrene-sulfonic acid), poly(cyclopentadienylmethyl-norbomene), and poly(amino acid),
the nonconductive polymer is at least one homopolymer or copolymer selected from the group consisting of polymethylmethacrylate (PMMA), polystyrene (PS), polyimide (PI), and polycarbonate (PC),
the mesoporous material different from the mesoporous material used in the memory layer is any one selected from the group consisting of thin films prepared by using siloxane or silsesquioxane as a matrix and using cyclodextrin, calix arene, or dendrimer as a pore-forming material, and thin films prepared by using silica or a block terpolymer of polyethyleneoxide /polypropyleneoxide/polyethyleneoxide (PEO-PPO-PEO) as a matrix and using a surfactant as a pore-forming material, and
the organic monomer able to be formed into a thin film using vacuum deposition is acetylene, Alq3 (8-hydroxyquinoline aluminum), or TPD (N,N-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine).

### Claim 15 (depends on 13)

The memory device as set forth in claim 13, wherein the conductive polymer is at least one homopolymer or copolymer selected from the group consisting of poly(n-vinylpyridine), poly(dimethylsiloxane), poly(ethylene-oxide), poly(acrylic acid), poly(methylacrylic acid), poly(styrene-sulfonic acid), poly(cyclopentadienylmethyl-norbornene), and poly(amino acid),
the nonconductive polymer is at least one homopolymer or copolymer selected from the group consisting of polymethylmethacrylate (PMMA), polystyrene (PS), polyimide (PI), and polycarbonate (PC),
the mesoporous material different from the mesoporous material used in the memory layer is any one selected from the group consisting of thin films prepared by using siloxane or silsesquioxane as a matrix and using cyclodextrin, calix arene, or dendrimer as a pore-forming material, and thin films prepared by using silica or a block terpolymer of polyethyleneoxide/polypropyleneoxide/polyethyleneoxide (PEO-PPO-PEO) as a matrix and using a surfactant as a pore-forming material, and
the organic monomer able to be formed into a thin film using vacuum deposition is acetylene, Alq3 (8-hydroxyquinoline aluminum), or TPD (N,N-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine).

### Claim 16 (depends on 1)

The memory device as set forth in claim 1, wherein the barrier layer has a thickness ranging from 0.1 to 100 nm.

### Claim 17 (depends on 11)

The memory device as set forth in claim 11, wherein the baffler layer has a thickness ranging from 0.1 to 100 nm.

### Claim 18 (depends on 1)

The memory device as set forth in claim 1, wherein the first and second electrodes are formed of at least one material selected from the group consisting of metals, metal alloys, metal nitrides, metal oxides, metal sulfides, carbon, conductive polymers, organic conductors, and mixtures thereof.

### Claim 19 (depends on 18)

The memory device as set forth in claim 18, wherein the metal is selected from the group consisting of aluminum, gold, silver, platinum, and indium tin oxide.