# US 7,612,351 B2 · Ion implanter with function of compensating wafer cut angle and ion implantation method using the same

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- Number: US 7,612,351 B2
- Document ID: US7612351B2
- Status: Granted
- Kind: B2
- Application number: 11/925,397
- Filed: 2007-10-26
- Published: 2008-05-08
- Granted: 2009-11-03
- Earliest claimed: 2006-11-03
- Assignees: Dongbu HiTek Co., Ltd.
- Inventors: Hag Dong Kim
- Web page: https://patentgrep.com/patent/US7612351B2

## CPC

- H01J 37/20: Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
- H10P 72/0471: {comprising at least one ion or electron beam chamber}
- H10P 72/53: {using optical controlling means}
- H01J 2237/20214: Rotation
- H01J 2237/2485: Electric or electronic means
- H01J 2237/304: Controlling tubes
- H01J 2237/31701: Ion implantation
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Provided are an ion implanter for compensating for a wafer cut angle and an ion implantation method using the same. The ion implanter may include an orienter for rotating a wafer mounted on an alignment stage thereof to align a notch of the wafer and a wafer stage for mounting thereon the wafer whose notch has been aligned. The ion implanter may further include an ion implantation angle adjustment unit for adjusting an angle of the wafer stage, a cut angle measurement unit for measuring the wafer cut angle while the wafer is mounted and rotated on the alignment stage, and a controller for controlling the ion implantation angle adjustment unit to compensate for the measured wafer cut angle.

## Claims

### Claim 1

An ion implanter for compensating for a wafer cut angle, the ion implanter comprising:
an orienter adapted to rotate a wafer mounted on an alignment stage thereof to align a notch of the wafer;
a wafer stage adapted to have the wafer whose notch has been aligned mounted thereon;
an ion implantation angle adjustment unit adapted to adjust an angle of the wafer stage;
a cut angle measurement unit adapted to measure the wafer cut angle while the wafer is mounted and rotated on the alignment stage; and
a controller adapted to calculate the wafer cut angle and to control the ion implantation angle adjustment unit to compensate for the calculated wafer cut angle.

### Claim 2 (depends on 1)

The implanter of claim 1, wherein the cut angle measurement unit includes:
a beam generator adapted to generate and irradiate a beam into the wafer; and
a detector adapted to receive the beam that is irradiated from the beam generator and reflected from the rotating wafer and to generate a detection signal.

### Claim 3 (depends on 2)

The implanter of claim 2, wherein the cut angle measurement unit further includes a beam path adjustment unit adapted to adjust a path of the beam irradiated into the wafer to make the beam inclinedly incident on the wafer.

### Claim 4 (depends on 2)

The implanter of claim 2, wherein the controller is adapted to derive, based on the detection signal, a variation of an intensity amount and/or a wavelength of the beam that is caused by rotation of the wafer and to calculate the wafer cut angle based on the variation of the intensity amount and/or the wavelength of the beam.

### Claim 5 (depends on 4)

The implanter of claim 4, wherein the controller is adapted to calculate the wafer cut angle using pre-stored data representing a relationship between the wafer cut angle and the variation of the intensity amount and/or the wavelength of the beam.

### Claim 6

An ion implantation method for compensating for a wafer cut angle, the method comprising:
mounting a wafer on a support element;
manipulating the support element so as to align a notch of the wafer;
calculating the wafer cut angle;
adjusting an ion implantation angle of the wafer in consideration of the calculated wafer cut angle; and
injecting an ion beam to implant ions into the wafer.

### Claim 7 (depends on 6)

The method of claim 6, wherein the step of calculating the wafer cut angle includes:
irradiating a beam into the wafer and receiving the beam that is reflected from the rotating wafer;
generating a detection signal based on the received beam;
deriving, based on the detection signal, a variation of an intensity amount and/or a wavelength of the beam that is caused by rotation of the wafer; and
calculating the wafer cut angle based on the variation of the intensity amount and/or the wavelength of the beam.

### Claim 8 (depends on 7)

The method of claim 7, wherein a path of the beam irradiated into the wafer is adjusted to make the beam inclinedly incident on the wafer.

### Claim 9 (depends on 7)

The method of claim 7, wherein the wafer cut angle is calculated using pre-stored data representing a relationship between the wafer cut angle and the variation of the intensity amount and/or the wavelength of the beam.