# US 7,612,339 B2 · Optoconductive compound and method of producing the same

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- Number: US 7,612,339 B2
- Document ID: US7612339B2
- Status: Granted
- Kind: B2
- Application number: 11/950,650
- Filed: 2007-12-05
- Published: 2008-08-07
- Granted: 2009-11-03
- Earliest claimed: 2006-12-05
- Assignees: Electronics and Telecommunications Research Institute
- Inventors: Kibong Song; Kyeongam Kim; Sang Su Lee; Doo-Hee Cho
- Web page: https://patentgrep.com/patent/US7612339B2

## CPC

- C01B 19/002: {Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions}
- C01P 2002/72: by d-values or two theta-values, e.g. as X-ray diagram
- C01P 2006/60: Optical properties, e.g. expressed in CIELAB-values
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

## Abstract

Conventional optoconductive compounds, such as CIS or CdTe include scarce indium or environmentally-unfriendly cadmium. On the other hand, an optoconductive compound according to the present invention has high optoconductive efficiency without inclusion of indium and cadmium, wherein the optoconductive compound according to the present invention is represented by AXYY′ where A is a Group 11 element, X is a Group 15 element, and Y and Y′ are Group 16 elements in which Y and Y′ can be identical to or different from each other.

## Claims

### Claim 1

A method of producing an optoconductive compound, the method comprising:
depositing a first material represented by X2Y3 on a substrate;
depositing a second material represented by AY′2 on the first material; and
performing a heat treatment on the first material and the second material, wherein A is a Group 11 element, X is a Group 15 element, and Y and Y′ are Group 16 elements, wherein Y and Y′ can be identical to or different from each other.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first material is represented by As2S3.

### Claim 3 (depends on 1)

The method of claim 1, wherein the second material is represented by CuSe2.

### Claim 4 (depends on 1)

The method of claim 1, wherein the heat treatment is performed at a temperature of from 200° C. to 300° C.

### Claim 5 (depends on 1)

The method of claim 1, wherein the first material is amorphous.

### Claim 6 (depends on 1)

The method of claim 1, wherein the second material is crystalline.