# US 7,611,996 B2 · Multi-stage curing of low K nano-porous films

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- Number: US 7,611,996 B2
- Document ID: US7611996B2
- Status: Granted
- Kind: B2
- Application number: 11/085,416
- Filed: 2005-03-21
- Published: 2005-10-20
- Granted: 2009-11-03
- Earliest claimed: 2004-03-31
- Assignees: Applied Materials, Inc.
- Inventors: Francimar Schmitt; Yi Zheng; Kang Sub Yim; Sang H. Ahn; Lester A. D'Cruz; Dustin W. Ho; Alexandros T. Demos; Li-Qun Xia; Derek R. Witty; Hichem M'Saad
- Web page: https://patentgrep.com/patent/US7611996B2

## CPC

- H10W 20/095: {by irradiating with electromagnetic or particle radiation (plasma treatment H10W20/096)}
- C23C 16/401: {containing silicon}
- C23C 16/56: After-treatment
- H10P 14/6506: {Formation of intermediate materials}
- H10P 14/6539: {by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions}
- H10P 14/6548: {by forming intermediate materials, e.g. capping layers or diffusion barriers}
- H10P 14/6681: {the precursor containing a compound comprising Si}
- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10W 20/072: {of dielectric parts comprising air gaps}
- H10W 20/087: {involving multiple stacked pre-patterned masks}
- H10W 20/088: {involving partial etching of via holes}
- H10W 20/46: comprising air gaps
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/6342: {Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating}
- H10P 14/665: {Porous materials}
- H10P 14/6686: {the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane}
- H10P 14/6922: {the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC}
- Y10T 428/249978: Voids specified as micro
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

## Claims

### Claim 1

A method of curing a chemical vapor deposited low K dielectric layer, the method comprising:
applying one of thermal energy and electron beam radiation to an as-deposited low K dielectric layer comprising labile carbon-containing groups; and
applying the other of thermal energy and electron beam radiation to the as-deposited low K layer, displacing the labile carbon-containing groups to form nanopores.

### Claim 2 (depends on 1)

The method of claim 1 wherein the thermal energy is applied prior to the electron beam.

### Claim 3 (depends on 1)

The method of claim 1 wherein the as-deposited low K dielectric layer results from reaction between a silicon-containing component and a non-silicon containing component.

### Claim 4 (depends on 3)

The method of claim 3 wherein the as-deposited low K dielectric layer results from reaction between diethoxymethylsilane as the silicon-containing component, and alpha-terpinene as the non-silicon containing component.

### Claim 5 (depends on 3)

The method of claim 3 wherein the as-deposited low K dielectric layer is exposed to the thermal energy in the form of treatment at a temperature of 400° C. or greater for period of 5 min or less, prior to exposure to a dose of electron beam radiation of 500 μC/cm 2.

### Claim 6 (depends on 5)

The method of claim 5 wherein the as-deposited low K dielectric layer is exposed to the thermal energy in the form of treatment at a temperature of about 400° C. for 5 min or less, prior to exposure to a dose of electron beam radiation of about 150 μC/cm 2.

### Claim 7 (depends on 3)

The method of claim 3 wherein the low K dielectric layer exhibits a dielectric constant of 3.0 or less following the electron beam cure step.