# US 7,611,974 B2 · Multilayer structure and fabrication thereof

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- Number: US 7,611,974 B2
- Document ID: US7611974B2
- Status: Granted
- Kind: B2
- Application number: 11/899,340
- Filed: 2007-09-05
- Published: 2008-08-14
- Granted: 2009-11-03
- Earliest claimed: 2007-02-14
- Assignees: S.O.I. Tec Silicon on Insulator Technologies
- Inventors: Fabrice Letertre
- Web page: https://patentgrep.com/patent/US7611974B2

## CPC

- H10P 14/271: {characterised by the preparation of substrate for selective deposition}
- H10P 14/274: {using seed materials}
- H10P 14/2905: {Silicon, silicon germanium or germanium}
- H10P 14/3211: {Silicon, silicon germanium or germanium}
- H10P 14/3216: {Nitrides}
- H10P 14/3416: {Nitrides}
- H10P 14/3421: {Arsenides}
- H10P 90/1916: {with separation or delamination along an ion implanted layer, e.g. Smart-cut}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- Y10S 438/933: Germanium or silicon or Ge-Si on III-V
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A process for fabricating a multilayer structure is provided as well as the structure itself. In accordance with one embodiment, the process includes growing a growth layer on a silicon substrate by epitaxial growth, forming at least one pattern from the growth layer, depositing an oxide layer on the silicon substrate, transferring a silicon active layer onto the oxide layer, forming a cavity in the silicon active layer oxide layer above the pattern, and growing a III-V material in the cavity.

## Claims

### Claim 1

A process for fabricating a multilayer structure comprising:
a) growing a growth layer on a silicon substrate that is adapted and configured to permit growth of III-V materials thereon;
b) forming at least one pattern from the growth layer;
c) depositing an oxide layer on the silicon substrate;
d) transferring a silicon active layer onto the oxide layer;
e) forming a cavity through the silicon active layer and in the oxide layer above the at least one pattern to expose the growth layer; and
f) growing a III-V material in the cavity on the growth layer.

### Claim 2 (depends on 1)

The process of claim 1, wherein the at least one pattern is formed by chemically etching the growth layer through an aperture mask applied on the growth layer.

### Claim 3 (depends on 1)

The process of claim 1, wherein the cavity is formed by chemically etching the silicon active layer and the oxide layer through an aperture mask applied on the silicon active layer, the mask being aligned with respect to the at least one pattern of the growth layer.

### Claim 4 (depends on 1)

The process of claim 1, wherein the silicon active layer is transferred by bonding an SOI structure onto the oxide layer.

### Claim 5 (depends on 4)

The process of claim 4, wherein the base substrate of the SOI structure is removed after bonding the SOI structure onto the oxide layer.

### Claim 6 (depends on 1)

The process of claim 1, wherein the silicon substrate includes misoriented silicon.

### Claim 7 (depends on 1)

The process of claim 1, wherein the growth layer includes germanium.

### Claim 8 (depends on 7)

The process of claim 7, further comprising at least one heat treatment step to cause dislocations in the at least one pattern to migrate toward an edge of the at least one pattern to annihilate the dislocations.

### Claim 9 (depends on 7)

The process of claim 7, wherein the III-V material is selected from the group consisting of GaAs, AlGaAs, and InGaAs.

### Claim 10 (depends on 1)

The process of claim 1, wherein the growth layer includes aluminum nitride.

### Claim 11 (depends on 10)

The process of claim 10, wherein the III-V material is selected from the group consisting of GaN, AlGaN, InGaN, and ZnGaN.

### Claim 12 (depends on 1)

The process of claim 1, wherein the growth layer is formed epitaxially.

### Claim 13 (depends on 1)

The process of claim 1, wherein the III-V material is grown in the cavity epitaxially.