# US 7,611,948 B2 · Methods of forming non-volatile memory device

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- Number: US 7,611,948 B2
- Document ID: US7611948B2
- Status: Granted
- Kind: B2
- Application number: 11/945,477
- Filed: 2007-11-27
- Published: 2008-07-03
- Granted: 2009-11-03
- Earliest claimed: 2006-12-28
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Jae-Hwang Sim; Yong-Sik Yim; Ki-Nam Kim; Jae-Kwan Park
- Web page: https://patentgrep.com/patent/US7611948B2

## CPC

- H10B 41/35: with a cell select transistor, e.g. NAND
- H10B 41/30: characterised by the memory core region
- H10B 69/00: Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
- Y10S 438/954: Making oxide-nitride-oxide device
- H10B: ELECTRONIC MEMORY DEVICES
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A method of forming a non-volatile memory device includes forming first mask patterns, which can have relatively large distances therebetween. A distance regulating layer is formed that conformally covers the first mask patterns. Second mask patterns are formed in grooves on the distance regulating layer between the first mask patterns.

## Claims

### Claim 1

A method of forming a non-volatile memory device, the method comprising:
forming first mask patterns on an etching target layer that is on a substrate, the first mask patterns including a source mask line, a string select mask line, and a plurality of first cell mask lines disposed between the source mask line and the string select mask line;
forming a distance regulating layer that conformally covers the first mask patterns and defines grooves thereon that are between and extend parallel to adjacent pairs of the first mask patterns;
forming second mask patterns in the grooves between the first mask patterns, the second mask patterns including a ground select mask line in a groove adjacent to the source mask line and a plurality of second cell mask lines each in one of another grooves adjacent to the first cell mask lines;
anisotropically etching the distance regulating layer on both sides of the ground select mask line, the string select mask line, the first cell mask lines, and the second cell mask lines to expose portions of the etching target layer; and
patterning the etching target layer using the ground select mask line, the string select mask line, the first cell mask lines, and the second cell mask lines as etch masks to form a ground select gate line, a string select gate line, and a plurality of cell gate lines, respectively.

### Claim 2 (depends on 1)

The method as recited in claim 1, further comprising before patterning the etching target layer:
removing the source mask line, wherein the etching target layer at the location of the removed source mask line is removed during the patterning process.

### Claim 3 (depends on 2)

The method as recited in claim 2, further comprising after patterning the etching target layer to form the ground select gate line, the string select gate line, and the plurality of cell gate lines:
injecting dopant ions into the substrate using the ground select gate line, the plurality of cell gate lines, and the string select gate line as masks to form a common source region, cell source/drain regions, and a common drain region, respectively, in the substrate;
forming an interlayer dielectric that covers the entire surface of the substrate;
patterning the interlayer dielectric to form a source groove that exposes the common source region of the substrate; and
forming a source line in the source groove.

### Claim 4 (depends on 3)

The method as recited in claim 3, further comprising:
removing the first and second mask patterns.

### Claim 5 (depends on 1)

The method as recited in claim 1, wherein the patterning the etching target layer comprises:
patterning the etching target layer using the source mask line, the ground select mask line, the first and second cell mask lines, and the string select mask line as etch masks to form a dummy source line, the ground select gate line, the plurality of cell gate lines, and the string select gate line, respectively.

### Claim 6 (depends on 5)

The method as recited in claim 5, further comprising after forming the dummy source line, the ground select gate line, the plurality of cell gate lines, and the string select gate line:
injecting first dopant ions into the substrate using the dummy source line, the ground select gate line, the plurality of cell gate lines, and the string select gate line as masks to form a first doping region, a common source region, cell source/drain regions, and a common drain region, respectively;
forming an interlayer dielectric on the entire surface of the substrate;
patterning the interlayer dielectric to form a preliminary source groove that exposes the dummy source line;
removing the exposed dummy source line to form a source groove;
injecting second dopant ions into the substrate through the source groove to form a second doping region; and
forming a source line in the source groove on the second doping region of the substrate,
wherein the first doping region is formed in a region of the substrate between the dummy source line and the ground select gate line, and the first and second doping regions are connected to each other to form a common source region.

### Claim 7 (depends on 6)

The method as recited in claim 6, further comprising:
removing the first and second mask patterns.

### Claim 8 (depends on 1)

The method as recited in claim 1, wherein the combined number of the first cell mask lines and the second cell mask lines is 2n, with n being a positive integer equal to or greater than 3.

### Claim 9 (depends on 1)

The method as recited in claim 1, wherein the groove between a pair of adjacent first cell mask lines has the same width as the first cell mask line.

### Claim 10 (depends on 9)

The method as recited in claim 9, wherein the thickness of the distance regulating layer is equal to the width of the first cell mask line.

### Claim 11 (depends on 1)

The method as recited in claim 1, wherein:
the grooves include first grooves and a second groove;
the first grooves are disposed between a pair of adjacent first cell mask lines and between the string select mask line and the first cell mask line adjacent to the string select mask line;
the second groove is disposed between the source mask line and the first cell mask line adjacent to the source mask line; and
the second groove has a larger width than the first groove.

### Claim 12 (depends on 11)

The method as recited in claim 11, wherein the width of the first groove is equal to a width of the first cell mask line.

### Claim 13 (depends on 11)

The method as recited in claim 11, wherein the width of the second groove is equal to a width of the string select mask line.

### Claim 14 (depends on 1)

The method as recited in claim 1, wherein the distance regulating layer is formed from a material having an etch selectivity with respect to the first and second mask patterns.

### Claim 15 (depends on 1)

The method as recited in claim 1, wherein the cell gate lines each include a tunnel insulator, a charge storage pattern on the tunnel insulator, a blocking insulating pattern on the charge storage pattern, and a control gate electrode on the blocking insulating pattern.