# US 7,611,932 B2 · Method of manufacturing a thin film transistor

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- Number: US 7,611,932 B2
- Document ID: US7611932B2
- Status: Granted
- Kind: B2
- Application number: 11/199,272
- Filed: 2005-08-09
- Published: 2006-04-20
- Granted: 2009-11-03
- Earliest claimed: 2004-09-25
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Huaxiang Yin; Wenxu Xianyu; Takashi Noguchi; Hans S. Cho; Ji-sim Jung
- Web page: https://patentgrep.com/patent/US7611932B2

## CPC

- H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 86/01: Manufacture or treatment
- H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)}
- H10P 14/3238: {being insulating materials}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3808: {using laser beams}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method of manufacturing a thin film transistor is provided. The method includes forming an amorphous silicon layer on a substrate, forming a source region, a drain region, and a region of a plurality of channels electrically interposed between the source region and the drain region by patterning the amorphous silicon layer, annealing a region of the channels, sequentially forming a gate oxide film and a gate electrode on a channel surface, and doping the source region and the drain region.

## Claims

### Claim 1

A method of manufacturing a thin film transistor, comprising:
forming an amorphous silicon layer on a substrate;
patterning the amorphous silicon layer to form a monolithic amorphous silicon pattern, the patterning including:
forming a plurality of amorphous channels each having first ends and second ends,
forming an amorphous source region integral with the first ends of each of the amorphous channels, and
forming an amorphous drain region integral with the second ends of each of the amorphous channels, such that the monolithic amorphous silicon pattern includes the plurality of amorphous channels interposed between the source region and the drain region;
after patterning the amorphous silicon layer, applying a laser beam to the plurality of amorphous channels thereby converting the plurality of amorphous channels to a crystalline state;
sequentially forming a gate oxide film and a gate electrode on the plurality of crystallized channels; and
doping the source region and the drain region.

### Claim 2 (depends on 1)

The method of claim 1, wherein an energy density of the laser beam ranges from about 200 to about 2000 mJ/cm2.

### Claim 3 (depends on 2)

The method of claim 2, wherein the energy density of the laser beam is about 800 mJ/cm2.

### Claim 4 (depends on 1)

The method of claim 1, further comprising, while converting the plurality of amorphous channels to a crystalline state, applying the laser beam to the source and drain regions thereby converting the source region and the drain region to a crystalline state.

### Claim 5 (depends on 1)

The method of claim 1, wherein the gate electrode exposes portions of the channels along first and second sides of the gate electrode, the method further including doping a portion of the plurality of channels using the gate electrode as a mask.

### Claim 6 (depends on 1)

The method of claim 1, wherein the amorphous silicon layer is formed to a thickness ranging from about 1 to about 1000 nm.

### Claim 7 (depends on 1)

The method of claim 1, wherein each of the plurality of channels has a width ranging from about 1 to about 5000 nm.

### Claim 8 (depends on 1)

The method of claim 1, wherein each of the plurality of channels has a ratio of thickness to width ranging from about 0.0002 to about 1000.

### Claim 9 (depends on 8)

The method of claim 8, wherein each of the plurality of channels has a ratio of thickness to width ranging from about 0.1 to about 10.

### Claim 10 (depends on 1)

The method of claim 1, wherein the source region and the drain region are spaced apart by a distance ranging from about 10 to about 10000 nm.

### Claim 11 (depends on 1)

The method of claim 1, wherein the substrate is a glass substrate.

### Claim 12 (depends on 1)

The method of claim 1, wherein the substrate is a plastic substrate, and the amorphous silicon layer is formed directly on the plastic substrate.

### Claim 13 (depends on 1)

The method of claim 1, wherein the substrate includes a buffer layer, the buffer layer formed of SiO2 or SiN.

### Claim 14 (depends on 1)

The method as claimed in claim 1, wherein, in forming the monolithic amorphous silicon pattern, the amorphous source and drain regions are formed have thicknesses substantially equal to thicknesses of the amorphous channels, and the amorphous source and drain regions are formed to extend above the substrate by a distance substantially equal to that of the amorphous channels.

### Claim 15 (depends on 1)

The method as claimed in claim 1, wherein the amorphous channels are formed to contact the substrate along the entire length of the channels, and the amorphous channels are in contact with the substrate along the entire length thereof while the laser beam is applied thereto during crystallization.

### Claim 16 (depends on 4)

The method as claimed in claim 4, wherein the crystallized channels are electrically connected to adjacent crystallized channels by respective crystallized portions of the source and drain regions.