# US 7,611,931 B2 · Semiconductor structures with body contacts and fabrication methods thereof

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- Number: US 7,611,931 B2
- Document ID: US7611931B2
- Status: Granted
- Kind: B2
- Application number: 11/928,135
- Filed: 2007-10-30
- Published: 2008-02-28
- Granted: 2009-11-03
- Earliest claimed: 2005-08-31
- Assignees: International Business Machines Corporation
- Inventors: Kangguo Cheng; Ramachandra Divakaruni; Jack Allan Mandelman
- Web page: https://patentgrep.com/patent/US7611931B2

## CPC

- H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)}
- H10B 12/0383: {wherein the transistor is vertical}
- H10B 12/395: {the transistor being vertical}
- H10B 12/488: {Word lines}
- H10D 89/213: {in field-effect devices}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A semiconductor structure for a dynamic random access memory (DRAM) cell array that includes a plurality of vertical memory cells built on a semiconductor-on-insulator (SOI) wafer and a body contact electrically coupling a semiconductor body and a semiconductor substrate of the SOI wafer. The semiconductor body includes a channel region for the access device of one of the vertical memory cells. The body contact, which extends through a buried dielectric layer of the SOI wafer, provides a current leakage path that reduces the impact of floating body effects upon the vertical memory cell. The body contact may be formed by etching a via that extends through the semiconductor body and buried dielectric layer of the SOI wafer and extends into the substrate and partially filling the via with a conductive material that electrically couples the semiconductor body with the substrate.

## Claims

### Claim 1

A method for forming a semiconductor structure in a semiconductor wafer including a semiconductor substrate, a semiconductor layer with a plurality of semiconductor bodies, and a buried dielectric layer separating the semiconductor substrate from the semiconductor layer, the method comprising:
building a plurality of vertical memory cells each in a corresponding one of a plurality of trenches in the semiconductor wafer;
after building the vertical memory cells, forming a via extending through one of the semiconductor bodies and the buried dielectric layer and extending into the semiconductor substrate; and
at least partially filling the via with a first plug of an electrically conductive material that extends through the buried dielectric layer to define a body contact having a first end electrically connected with the semiconductor body and a second end electrically connected with the semiconductor substrate.

### Claim 2 (depends on 1)

The method of claim 1 wherein the vertical memory cells further include a first vertical memory cell and a second vertical memory cell adjacent to the first vertical memory cell, and further comprising:
forming an insulating layer on the semiconductor body; and
building a plurality of word lines on the semiconductor wafer including a first word line on the insulating layer between the first and second memory cells and electrically isolated from the first and second memory cells, the first word line aligned vertically with the body contact.

### Claim 3 (depends on 2)

The method of claim 2 wherein the plurality of word lines further includes a second word line connected with an access device of the first vertical memory cell and a third word line connected with an access device of the second vertical memory cell, the second and third word lines electrically isolated from the first word line.

### Claim 4 (depends on 1)

The method of claim 1 further comprising:
forming a sidewall spacer within the via that separates the body contact from the semiconductor body.

### Claim 5 (depends on 4)

The method of claim 4 wherein forming the sidewall spacer further comprises:
forming an epitaxial layer on a portion of the semiconductor body bordering the via.

### Claim 6 (depends on 4)

The method of claim 4 wherein forming the sidewall spacer further comprises:
forming an isolation collar of an insulating material on a portion of the semiconductor body bordering the via and surrounding a portion of the body contact.

### Claim 7 (depends on 1)

The method of claim 1 further comprising:
forming an insulating layer in the via above the first plug defining the body contact; and
forming a second plug of a semiconductor material within the via and separated from the first plug by the insulating layer, the second plug having an interface within said via with the semiconductor body.

### Claim 8 (depends on 7)

The method of claim 7 wherein each of the vertical memory cells includes an access device with a first source/drain region and a storage capacitor electrically coupled by the first source/drain region with the access device, and further comprising:
introducing a dopant into the semiconductor body and the second plug to define a second source/drain region for the access device of each of the vertical memory cells.

### Claim 9 (depends on 7)

The method of claim 7 wherein the electrically conductive material of the first plug is a semiconductor material doped with a concentration of a p-type dopant and the semiconductor material in the second plug is doped with a concentration of an n-type dopant.

### Claim 10 (depends on 9)

The method of claim 9 wherein the semiconductor material of the first plug is polysilicon doped with the p-type dopant and the semiconductor material of the second plug is polysilicon doped with the n-type dopant.

### Claim 11 (depends on 7)

The method of claim 7 wherein the electrically conductive material of the first plug is polysilicon, and the semiconductor material of the first plug is polysilicon doped oppositely to the polysilicon in the second plug.

### Claim 12 (depends on 1)

The method of claim 1 wherein each of the vertical memory cells includes a storage capacitor and an access device with a vertical channel region defined in one of the semiconductor bodies and a gate configured to switch current flow through the vertical channel region to the storage capacitor.

### Claim 13 (depends on 1)

The method of claim 1 wherein forming the via further comprises:
etching the via into the semiconductor wafer.

### Claim 14 (depends on 1)

The method of claim 1 wherein the vertical memory cells are arranged in an array, and the body contact is inside the array.

### Claim 15 (depends on 14)

The method of claim 14 wherein the array is an eight square feature DRAM cell.