# US 7,611,926 B2 · Thermosetting die bonding film

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- Number: US 7,611,926 B2
- Document ID: US7611926B2
- Status: Granted
- Kind: B2
- Application number: 12/040,775
- Filed: 2008-02-29
- Published: 2008-09-04
- Granted: 2009-11-03
- Earliest claimed: 2007-03-01
- Assignees: Nitto Denko Corporation
- Inventors: Naohide Takamoto; Sadahito Misumi; Takeshi Matsumura; Yasuhiro Amano; Masami Oikawa; Tsubasa Miki
- Web page: https://patentgrep.com/patent/US7611926B2

## CPC

- H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes}
- H10W 74/114: {by a substrate and the encapsulations}
- H10P 72/7416: {used during dicing or grinding}
- H10W 72/01331: {using blanket deposition}
- H10W 72/01515: {Forming coatings}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07331: {Connecting techniques}
- H10W 72/07338: {hardening the adhesive by curing, e.g. thermosetting}
- H10W 72/075: {of bond wires}
- H10W 72/07504: {the auxiliary member being temporary, e.g. a sacrificial coating}
- H10W 72/07533: {Ultrasonic bonding, e.g. thermosonic bonding}
- H10W 72/07541: {Controlling the environment, e.g. atmosphere composition or temperature}
- H10W 72/325: {Die-attach connectors having a filler embedded in a matrix}
- H10W 72/351: {Materials of die-attach connectors}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/354: {comprising polymers}
- H10W 72/381: {Auxiliary members}
- H10W 72/5522: {comprising gold [Au]}
- H10W 72/5524: {comprising aluminium [Al]}
- H10W 72/5525: {comprising copper [Cu]}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 72/951: {Materials of bond pads}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/00: Package configurations
- H10W 90/231: {the stacked chips being on both top and bottom sides of an auxiliary carrier having no electrical connection structure}
- H10W 90/732: {between stacked chips}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The thermosetting die bonding film of the invention is a thermosetting die bonding film used to produce a semiconductor device, which contains, as main components, 5 to 15% by weight of a thermoplastic resin component and 45 to 55% by weight of a thermosetting resin component, and has a melt viscosity of 400 Pa·s or more and 2500 Pa·s or less at 100° C. before the film is thermally set.

## Claims

### Claim 1

A thermosetting die bonding film used to produce a semiconductor device,
which comprises, as main components, 5 to 15% by weight of a thermoplastic resin component and 45 to 55% by weight of a thermosetting resin component, and
has a melt viscosity of 400 Pa·s or more and 2500 Pa·s or less at 100° C. before the film is thermally set.

### Claim 2 (depends on 1)

The thermosetting die bonding film according to claim 1, which has a tensile storage modulus of 10 MPa or more at 250° C. after the film is thermally set,

### Claim 3 (depends on 1)

The thermosetting die bonding film according to claim 1, which has a moisture absorptivity of 1% by weight or less when the film is allowed to stand still in an atmosphere having a temperature of 85° C. and a relative humidity of 85% for 168 hours after heated so as to be thermally set.

### Claim 4 (depends on 1)

The thermosetting die bonding film according to claim 1, which has a weight reduction ratio of 1% by weight or less after the film is heated at 250° C. for 1 hour after heated so as to be thermally set.

### Claim 5 (depends on 1)

The thermosetting die bonding film according to claim 1, wherein an inorganic filler is contained in an amount that is more than 0 part by weight and is 80 parts or less by weight for 100 parts by weight of the organic resin components.

### Claim 6 (depends on 1)

The thermosetting die bonding film according to claim 1, wherein the thermoplastic resin component is an acrylic resin component and the thermosetting resin component is made of an epoxy resin component and a phenol resin component.

### Claim 7 (depends on 6)

The thermosetting die bonding film according to claim 6, wherein about the blend ratio between the epoxy resin component and the phenol resin component, the amount of hydroxyl groups in the phenol resin component is from 0.5 to 2.0 equivalents per equivalent of epoxy groups in the epoxy resin component.

### Claim 8 (depends on 7)

The thermo setting die bonding film according to claim 7, wherein the blended amount of the epoxy resin component and the phenol resin component is from 10 to 200 parts by weight for 100 parts by weight of the acrylic resin component.

### Claim 9 (depends on 1)

A dicing die-bonding film, wherein the thermosefting die bonding film according to claim 1 is laminated on an adhesive film.

### Claim 10 (depends on 1)

The thermo setting die bonding film according to claim 1, further comprising a crosslinking agent in an amount of 0.05 to 7 parts by weight for 100 parts by weight of polymer.

### Claim 11 (depends on 1)

A method for producing a semiconductor device, comprising:
attaching a semiconductor element onto a substrate or a lead frame through the thermosetting die bonding film of claim 1;
wire bonding the semiconductor element to electrode pads;
sealing the semiconductor element with a sealing resin; and
after-curing the sealing resin, wherein at least one of said attaching, wire bonding, sealing, and after-curing processes include heating sufficient to fix said semiconductor element to said substrate or lead frame by thermally setting the thermosetting die bonding film.

### Claim 12 (depends on 11)

The method of claim 11, wherein said method comprises temporarily bonding said semiconductor element or said substrate or lead frame to the thermosetting die bonding film.

### Claim 13 (depends on 11)

The method of claim 11, wherein said wire bonding process is carried out by a non-heating step.

### Claim 14 (depends on 11)

The method of claim 11, wherein said thermosetting die bonding film has a shearing adhesive strength of 0.2 MPa or more.

### Claim 15 (depends on 11)

The method of claim 11, wherein said semiconductor element is thermally set to said substrate or lead frame through the thermosetting die bonding film at a temperature of 80 to 180° C. for 0.1 to 24 hours.