# US 7,611,918 B2 · CMOS image sensor and method for fabricating the same

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- Number: US 7,611,918 B2
- Document ID: US7611918B2
- Status: Granted
- Kind: B2
- Application number: 11/448,428
- Filed: 2006-06-07
- Published: 2006-12-07
- Granted: 2009-11-03
- Earliest claimed: 2005-06-07
- Assignees: Dongbu Electronics Co., Ltd.
- Inventors: Hwang Joon
- Web page: https://patentgrep.com/patent/US7611918B2

## CPC

- H10F 39/182: {Colour image sensors}
- H10F 39/014: {of CMOS image sensors}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A CMOS image sensor and a method of fabricating the same are provided. The CMOS image sensor includes: an epitaxial layer of a first conductivity type, formed in a semiconductor substrate of the first conductivity type; a blue photodiode region of a second conductivity type, formed in the epitaxial layer at a first depth; a green photodiode region of the second conductivity type, spaced apart from the blue photodiode region and formed in the epitaxial layer at a second depth larger than the first depth; and a red photodiode region of the second conductivity type, spaced apart from the green photodiode region and formed in the epitaxial layer at a third depth larger than the second depth.

## Claims

### Claim 1

A method for fabricating a CMOS image sensor having blue, green and red photodiode regions, comprising:
forming an epitaxial layer of the first conductivity type in a surface of a semiconductor substrate;
implanting impurity ions of a second conductivity type in a first predetermined portion of the epitaxial layer to form the blue photodiode region having a first depth, wherein the implanting of the impurity ions in the first predetermined portion comprises patterning a first photoresist layer to expose only the first predetermined portion of the epitaxial layer and using the patterned first photoresist layer as an implantation mask for the blue photodiode region;
implanting impurity ions of the second conductivity type in a second predetermined portion of the epitaxial layer to form the green photodiode region having a second depth larger than the first depth, wherein the implanting of the impurity ions in the second predetermined portion comprises patterning a second photoresist layer to expose only the second predetermined portion of the epitaxial layer and using the patterned second photoresist layer as an implantation mask for the green photodiode region; and
implanting impurity ions of the second conductivity type in a third predetermined portion of the epitaxial layer to form the red photodiode region having a third depth larger than the second depth, wherein the implanting of the impurity ions in the third predetermined portion comprises patterning a third photoresist layer to expose only the third predetermined portion of the epitaxial layer and using the patterned third photoresist layer as an implantation mask for the red photodiode region.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the first depth is 1 μm or less.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the second depth is between 2 μm and 4 μm.

### Claim 4 (depends on 1)

The method according to claim 1, wherein the third depth is between 3 μm and 6 μm.

### Claim 5 (depends on 1)

The method according to claim 1, further comprising forming a first doped region of the first conductivity type in the epitaxial layer at the blue photodiode region, forming a second doped region of the first conductivity type in the epitaxial layer at the green photodiode region, and forming a third doped region of the first conductivity type in the epitaxial region at the red photodiode regions, wherein the first doped region, the second doped region, and the third doped region are formed at different depths.

### Claim 6 (depends on 1)

The method according to claim 1, wherein the epitaxial layer is formed to have a thickness of between 4 μm and 7 μm.

### Claim 7 (depends on 5)

The method according to claim 5, wherein the first doped region has a depth of 0.3 μm or less.

### Claim 8 (depends on 5)

The method according to claim 5, wherein the third doped region has a depth of between 0.3 μm and 1.0 μm.