# US 7,611,916 B2 · Method of manufacturing semiconductor optical element

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- Number: US 7,611,916 B2
- Document ID: US7611916B2
- Status: Granted
- Kind: B2
- Application number: 12/397,978
- Filed: 2009-03-04
- Published: 2009-09-10
- Granted: 2009-11-03
- Earliest claimed: 2008-03-05
- Assignees: Mitsubishi Electric Corporation
- Inventors: Masatsugu Kusunoki; Takafumi Oka
- Web page: https://patentgrep.com/patent/US7611916B2

## CPC

- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- H01S 5/22: having a ridge or stripe structure
- H01S 5/0202: {Cleaving}
- H01S 5/04254: {characterised by the shape}
- H01S 5/2009: {by using electron barrier layers}
- H01S 5/2214: {based on oxides or nitrides}
- H01S 5/3063: {using Mg}
- H01S 2301/176: Specific passivation layers on surfaces other than the emission facet
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

A method of manufacturing a semiconductor optical element, includes successively stacking a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type; applying a resist to the second semiconductor layer and patterning the resist into stripes by photolithography; forming recesses in the second semiconductor layer and a waveguide ridge adjacent to the recesses by dry-etching the second semiconductor layer only partially through the second semiconductor layer, using the resist as a mask; forming an insulating film on the waveguide ridge and in the recesses while leaving the resist; removing the insulating film from the resist so that the resist is exposed while the insulating film in the recess is left; removing the resist exposed; and forming an electrode on the waveguide ridge after removing the resist.

## Claims

### Claim 1

A method of manufacturing a semiconductor optical element, comprising:
successively stacking a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type;
applying a resist on the second semiconductor layer and patterning the resist into stripes by photolithography;
forming recesses with the second semiconductor layer at the bottom of the recesses and a waveguide ridge adjacent to the recesses, by dry-etching the second semiconductor layer to a depth only partially through the second semiconductor layer, using the resist as a mask;
forming an insulating film on the waveguide ridge and in the recesses without removing the resist;
removing the insulating film on the resist by etching, utilizing a difference in etching rate between the insulating film on the resist and the insulating film in the recesses so that the resist is exposed and the insulating film in the recess is left;
removing the resist that is exposed; and
forming an electrode on the waveguide ridge after removing the resist.

### Claim 2 (depends on 1)

The method according to claim 1, wherein forming an insulating film includes forming an SiO2 film by sputtering.