# US 7,611,825 B2 · Photolithography method to prevent photoresist pattern collapse > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,611,825 B2 - Document ID: US7611825B2 - Status: Granted - Kind: B2 - Application number: 10/942,499 - Filed: 2004-09-15 - Published: 2006-03-16 - Granted: 2009-11-03 - Earliest claimed: 2004-09-15 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Inventors: Ching-Yu Chang; Kuei Shun Chen; Bang-Ching Ho - Web page: https://patentgrep.com/patent/US7611825B2 ## CPC - G03F 7/091: {characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement} - G03F 7/11: having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A method comprises forming a BARC layer on a substrate, treating the BARC layer to make its surface hydrophilic, forming a photoresist layer on the treated BARC layer, exposing the photoresist layer to a predetermined pattern, and developing the photoresist layer to form patterned photoresist. ## Claims ### Claim 1 A method, comprising: forming an intermediary material layer on a substrate, wherein forming the intermediary material layer comprises forming an organic bottom anti-reflective coating layer; treating the intermediary material layer to make its surface substantially hydrophilic, thereby forming a treated intermediary material layer, wherein the treating the intermediary material layer includes at least one of a plasma treatment, an exposure to ultraviolet radiation, and a ion implantation treatment; thereafter forming a photoresist layer directly on the treated intermediary material, wherein the forming the photoresist layer includes forming an interface between the photoresist layer and the surface of the treated intermediary material layer; exposing the photoresist layer to a predetermined pattern; and developing the photoresist layer to form patterned photoresist. ### Claim 2 (depends on 1) The method of claim 1, wherein forming the intermediary material layer comprises forming a hydrophobic material layer. ### Claim 3 (depends on 1) The method of claim 1, wherein treating the intermediary material layer comprises exposing the intermediary material layer to a plasma. ### Claim 4 (depends on 1) The method of claim 1, wherein treating the intermediary material layer comprises exposing the intermediary material layer to plasma gases selected from the group consisting of N2, Ar, CO, F4, O2, Ne, Br2, a fluorine-containing gas, a carbon-containing gas, a chlorine-containing gas, and a combination thereof. ### Claim 5 (depends on 1) The method of claim 1, wherein treating the intermediary material layer comprises exposing the intermediary material layer to a plasma gas atmosphere with a gas flow rate ranging from about 50 to about 1000 sccm, at a pressure ranging from about 10 to about 500 mTorr. ### Claim 6 (depends on 1) The method of claim 1, wherein treating the intermediary material layer comprises exposing the intermediary material layer to ultraviolet radiation. ### Claim 7 (depends on 1) The method of claim 1, wherein treating the intermediary material layer comprises exposing the intermediary material layer to ultraviolet radiation having a wavelength ranging from about 150 nm to about 480 nm. ### Claim 8 (depends on 1) The method of claim 1, wherein treating the intermediary material layer comprises implanting ions of a predetermined species in the intermediary material layer. ### Claim 9 (depends on 1) The method of claim 1, wherein treating the intermediary material layer comprises implanting ions of a predetermined species in the intermediary material layer, the ion species selected from the group consisting of nitrogen, argon, helium, phosphorous, arsenic, boron, silicon, and hydrogen. ### Claim 10 (depends on 1) The method of claim 1, wherein treating the intermediary material layer comprises implanting ions of a predetermined dosage ranging from about 1e10 to about 1e20 cm−2 in the intermediary material layer. ### Claim 11 (depends on 1) The method of claim 1, wherein treating the intermediary material layer comprises implanting ions at a predetermined energy ranging from about 1 to about 200 keV in the intermediary material layer. ### Claim 12 (depends on 1) The method of claim 1, wherein developing the photoresist comprises applying a developer to the treated intermediary material layer. ### Claim 13 (depends on 1) The method of claim 1, wherein developing the photoresist comprises puddling an aqueous developer solution on the surface of the photoresist. ### Claim 14 (depends on 1) The method of claim 1, wherein developing the photoresist comprises spraying an aqueous developer solution on the surface of the photoresist. ### Claim 15 (depends on 1) The method of claim 1, wherein developing the photoresist comprises immersing the photoresist surface in an aqueous developer solution bath. ### Claim 16 (depends on 1) The method of claim 1, further comprising rinsing the developed photoresist with a rinse solution. ### Claim 17 (depends on 1) The method of claim 1, further comprising rinsing the developed photoresist with de-ionized water. ### Claim 18 (depends on 1) The method of claim 1, wherein treating the intermediary material layer comprises plasma treatment and ion implantation. ### Claim 19 (depends on 1) The method of claim 1, wherein treating the intermediary material layer comprises plasma treatment and ultraviolet radiation. ### Claim 20 (depends on 1) The method of claim 1, wherein treating the intermediary material layer comprises ultraviolet radiation and ion implantation. ### Claim 21 (depends on 1) The method of claim 1, wherein treating the intermediary material layer comprises plasma treatment, ion implantation, and ultraviolet radiation. ### Claim 22 A method, comprising: forming an intermediary material layer on a substrate, wherein forming the intermediary material layer comprises forming an organic bottom anti-reflective coating layer; treating the intermediary material layer to make its surface substantially hydrophilic, wherein the treating the intermediary material layer includes at least one of a plasma, an ion implantation, and a UV radiation; after treating the intermediary layer, forming a hexamethyldisilazane (HMDS) coating on the treated intermediary material layer; and forming a photoresist layer on the HMDS coating. ### Claim 23 A method, comprising: forming an organic BARC layer on a substrate; exposing the BARC layer to a plasma to make its surface substantially hydrophilic; forming a photoresist layer directly on the exposed BARC layer; exposing the photoresist layer to a predetermined pattern; and developing the photoresist layer to form patterned photoresist. ### Claim 24 A method, comprising: forming a BARC layer on a semiconductor substrate; exposing the BARC layer to ultraviolet radiation to make its surface substantially hydrophilic, wherein the exposing the BARC includes exposing to a first radiation beam; forming a photoresist layer directly on the exposed BARC layer, wherein the forming the photoresist layer is performed after the exposing the BARC layer to ultraviolet radiation; exposing the photoresist layer to a predetermined pattern, wherein the exposing the photoresist uses a second radiation beam; and developing the photoresist layer to form patterned photoresist. ### Claim 25 A method, comprising: forming a BARC layer on a substrate; treating the BARC layer, wherein the treating comprises implanting ions in the BARC layer to make its surface substantially hydrophilic, wherein the ions are selected from the group consisting of nitrogen, argon, helium, phosphorous, arsenic, boron, silicon, and hydrogen, wherein the treating is performed on the entire surface of the BARC layer; forming a photoresist layer on the treated BARC layer; exposing the photoresist layer to a predetermined pattern; and developing the photoresist layer to form patterned photoresist. ### Claim 26 A method, comprising: forming an organic BARC layer on a substrate; treating the BARC layer the treating including exposing the BARC layer to a plasma to make its surface substantially hydrophilic and rough; forming a photoresist layer on the treated BARC layer; exposing the photoresist layer to a predetermined pattern; and developing the photoresist layer to form patterned photoresist.