# US 7,611,820 B2 · Positive resist composition and pattern-forming method using the same

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- Number: US 7,611,820 B2
- Document ID: US7611820B2
- Status: Granted
- Kind: B2
- Application number: 11/519,966
- Filed: 2006-09-13
- Published: 2007-03-15
- Granted: 2009-11-03
- Earliest claimed: 2005-09-13
- Assignees: FUJIFILM Corporation
- Inventors: Hiromi Kanda; Shinichi Kanna; Haruki Inabe
- Web page: https://patentgrep.com/patent/US7611820B2

## CPC

- G03F 7/0758: {with silicon- containing groups in the side chains}
- G03F 7/0395: {the macromolecular compound having a backbone with alicyclic moieties}
- G03F 7/0397: {the macromolecular compound having an alicyclic moiety in a side chain}
- G03F 7/0757: {Macromolecular compounds containing Si-O, Si-C or Si-N bonds (G03F7/0752 takes precedence)}
- G03F 7/2041: {in the presence of a fluid, e.g. immersion; using fluid cooling means}
- Y10S 430/106: Binder containing
- Y10S 430/114: Initiator containing
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A positive resist composition comprises: (A) a resin capable of increasing its solubility in an alkali developer by action of an acid and not containing a silicon atom; (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation, (C) a silicon atom-containing resin having at least one group selected from groups (X) to (Z), (X) an alkali-soluble group, (Y) a group capable of decomposing by action of an alkali developer to increase the solubility of resin (C) in an alkali developer, (Z) a group capable of decomposing by action of an acid to increase the solubility of resin (C) in an alkali developer; and (D) a solvent.

## Claims

### Claim 1

A positive resist composition containing:
(A) a resin capable of increasing its solubility in an alkali developer by action of an acid and not containing a silicon atom;
(B) a compound capable of generating an acid upon irradiation with actinic ray or radiation,
(C) from 0.1 to 5 mass % of a total solids content in the composition of a silicon atom-containing resin having at least one group selected from groups (X) to (Z),
(X) an alkali-soluble group,
(Y) a group capable of decomposing by action of an alkali developer to increase the solubility of resin (C) in an alkali developer,
(Z) a group capable of decomposing by action of an acid to increase the solubility of resin (C) in an alkali developer; and
(D) a solvent.

### Claim 2 (depends on 1)

The positive resist composition as claimed in claim 1,
wherein the resin (A) has a monocyclic or polycyclic alicyclic hydrocarbon structure.

### Claim 3 (depends on 1)

The positive resist composition as claimed in claim 1,
wherein the silicon atom-containing resin (C) is a silicon atom-containing resin that is alkali-soluble and/or capable of increasing its solubility in an alkali developer by action of an acid.

### Claim 4 (depends on 1)

The positive resist composition as claimed in claim 1,
wherein the silicon atom-containing resin (C) is a resin that is alkali-soluble and does not increase its solubility in an alkali developer by action of an acid.

### Claim 5 (depends on 1)

The positive resist composition as claimed in claim 1,
wherein the silicon atom-containing resin (C) has at least one kind of repeating unit having a lactone group.

### Claim 6 (depends on 1)

The positive resist composition as claimed in claim 1,
wherein the silicon atom-containing resin (C) is a resin that is alkali-insoluble and capable of increasing its solubility in an alkali developer by action of an acid.

### Claim 7 (depends on 1)

The positive resist composition as claimed in claim 1, which is exposed with vacuum ultraviolet rays of wavelengths of 200 nm or less.

### Claim 8 (depends on 1)

The positive resist composition as claimed in claim 1,
wherein the weight average molecular weight of the silicon atom-containing resin (C) is from 1,000 to 100,000.

### Claim 9 (depends on 1)

The positive resist composition as claimed in claim 1,
wherein the silicon atom-containing resin (C) further contains a fluorine atom.

### Claim 10 (depends on 1)

The positive resist composition as claimed in claim 1,
wherein the resin (A) has a repeating unit having an alicyclic hydrocarbon group substituted with a hydroxyl group or a cyano group.

### Claim 11 (depends on 1)

A pattern-forming method comprising:
forming a resist film with the resist composition as claimed in claim 1;
exposing the resist film; and
developing the exposed resist film.

### Claim 12 (depends on 1)

The positive resist composition as claimed in claim 1, wherein the silicon atom-containing resin (C) has the alkali-soluble group (X), and wherein the alkali-soluble group (X) is a carboxylic acid group, a fluorinated alcohol group or a sulfonylimido group.