# US 7,611,552 B2 · Semiconductor polishing composition

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- Number: US 7,611,552 B2
- Document ID: US7611552B2
- Status: Granted
- Kind: B2
- Application number: 10/594,480
- Filed: 2005-03-28
- Published: 2007-11-22
- Granted: 2009-11-03
- Earliest claimed: 2004-03-29
- Assignees: Nitta Haas Incorporated
- Inventors: Yoshiharu Ohta; Yasuyuki Itai
- Web page: https://patentgrep.com/patent/US7611552B2

## CPC

- H10P 95/062: {involving a dielectric removal step}
- C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES

## Abstract

A semiconductor polishing composition is disclosed. The composition includes fumed silica. The semiconductor polishing composition is an aqueous dispersion solution of fumed silica. Further, the number of particles of fumed silica having a particle diameter of 0.5 μm or more is 600,000 pieces/ml or less and the number of particles of fumed silica having a particle diameter of 1 μm or more is 6000 pieces/ml or less.

## Claims

### Claim 1

A semiconductor polishing composition comprising:
fumed silica, the semiconductor polishing composition being an aqueous dispersion solution of fumed silica,
wherein the number of particles of fumed silica having a particle diameter of 0.5 μm or more is in a range of 10,000 to 600,000 pieces/ml and the number of particles of fumed silica having a particle diameter of 1 μm or more is in a range of 500 to 6000 pieces/ml.

### Claim 2 (depends on 1)

The semiconductor polishing composition of claim 1, wherein a content of the fumed silica is in a range of 10 to 30% by weight based on a total amount of the composition.

### Claim 3 (depends on 1)

The semiconductor polishing composition of claim 1, wherein the aqueous dispersion solution of fumed silica is prepared by adding an acidic fumed silica dispersion solution to an alkali aqueous solution.

### Claim 4 (depends on 3)

The semiconductor polishing composition of claim 3, wherein a pH of the alkali aqueous solution is in a range of 12 to 14.