# US 7,609,805 B2 · Mask used for LIGA process, method of manufacturing the mask, and method of manufacturing microstructure using LIGA process

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- Number: US 7,609,805 B2
- Document ID: US7609805B2
- Status: Granted
- Kind: B2
- Application number: 11/896,273
- Filed: 2007-08-30
- Published: 2008-07-10
- Granted: 2009-10-27
- Earliest claimed: 2007-01-04
- Assignees: Samsung Electronics Co., Ltd.; Seoul National University Industry Foundation
- Inventors: Chan-wook Baik; Yong-wan Jin; Gun-sik Park; Jong-min Kim; Young-min Shin; Jin-kyu So
- Web page: https://patentgrep.com/patent/US7609805B2

## CPC

- G03F 7/00: Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor (using photoresist structures for special production processes, see the relevant places, e.g. B44C, H10P76/00, H05K)
- G03F 1/22: Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F 9/7053: {Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves}
- G03F 9/7076: {Mark details, e.g. phase grating mark, temporary mark}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A mask used for a Lithographie, Galvanofomung, and Abformung (LIGA) process, a method for manufacturing the mask, and a method for manufacturing a microstructure using a LIGA process. The method for manufacturing the microstructure using the LIGA process contemplates forming a substrate for the microstructure, a plurality of photosensitive layers, each photosensitive layer having a plating hole and an aligning pinhole, and an aligning pin capable of being inserted into the aligning pinhole, with the aligning pinholes of the photosensitive layers being formed in corresponding positions, and repeating a process of stacking the photosensitive layer on the substrate for the microstructure and a process of forming a plating layer by plating the plating hole of the stacked photosensitive layer with a metal for a number of times corresponding to the number of the photosensitive layers, and when the photosensitive layers are stacked on the substrate for the structure, the photosensitive layers being aligned with one another by inserting the aligning pin into the aligning pinholes of all the photosensitive layers stacked on the substrate for the microstructure to penetrate all the photosensitive layers.

## Claims

### Claim 1

A mask used for a Lithographie, Galvanofomung, and Abformung process, the mask comprising:
a substrate allowing X-rays to pass through the substrate; and
an X-ray absorbing layer stacked on the substrate, with the X-ray absorbing layer comprising:
a plating pattern forming a plating hole in a photosensitive layer;
an aligning pin pattern forming an aligning pin in the same photosensitive layer, with said aligning pin disposable to assure alignment of a stack of a plurality of photosensitive layers; and
an aligning pinhole pattern forming, in the same photosensitive layer, an aligning pinhole in which the aligning pin is inserted while assuring said alignment of the stack of the plurality of photosensitive layers.

### Claim 2 (depends on 1)

The mask of claim 1, comprised of the substrate being made from silicon (Si).

### Claim 3 (depends on 1)

The mask of claim 1, comprised of the X-ray absorbing layer being made from gold (Au).

### Claim 4

A method for manufacturing a mask used for a Lithographie, Galvanofomung, and Abformung process, the method comprising:
stacking an X-ray absorbing layer on a substrate for allowing X-rays to pass through the substrate; and
etching the X-ray absorbing layer to form a plating pattern forming a plating hole in a photosensitive layer, an aligning pin pattern forming an aligning pin in the same photosensitive layer and disposable to assure alignment of a plurality of stacked photosensitive layers, and an aligning pinhole pattern forming an aligning pinhole in which the aligning pin is inserted in the same photosensitive layer while assuring said alignment of the stack of the plurality of photosensitive layers.

### Claim 5 (depends on 4)

The method of claim 4, comprised of the substrate being made from silicon (Si).

### Claim 6 (depends on 4)

The method of claim 4, comprised of the X-ray absorbing layer being made from gold (Au).

### Claim 7 (depends on 4)

The method of claim 4, with the stacking of the X-ray absorbing layer on the substrate comprising:
forming a seed layer by depositing metal on the substrate for the mask; and
forming a plating layer by plating the seed layer with the metal.

### Claim 8

A method for manufacturing a microstructure using a Lithographie, Galvanofomung, and Abformung process, the method comprising:
forming a substrate for the microstructure, a plurality of photosensitive layers, each photosensitive layer having a plating hole and an aligning pinhole, and an aligning pin insertable into the aligning pinhole, with the aligning pinholes of the plurality of photosensitive layers being formed in positions corresponding to each other; and
repeating a process of stacking one of the photosensitive layers on the substrate for the microstructure and plating the plating hole of the stacked photosensitive layer with metal for forming a plating layer for a number of times corresponding to the number of the photosensitive layers, and when the photosensitive layers are stacked on the substrate for the microstructure, the photosensitive layers become aligned with one another by inserting the aligning pin into the aligning pinholes of all of the photosensitive layers stacked on the substrate for the microstructure to penetrate all the photosensitive layers.

### Claim 9 (depends on 8)

The method of claim 8, comprised of forming the photosensitive layer having the plating hole and the aligning pinhole by:
preparing a mask comprising a substrate for the mask for allowing X-rays to pass through the substrate from the mask and an X-ray absorbing layer stacked on the substrate for the mask, with the X-ray absorbing layer comprising a plating pattern forming the plating hole and an aligning pinhole pattern defining the aligning pinhole;
applying the mask to the photosensitive layer;
irradiating the photosensitive layer with X-rays; and
forming the plating hole and the aligning pinhole in the photosensitive layer by developing the photosensitive layer.

### Claim 10 (depends on 8)

The method of claim 8, comprised of forming the aligning pin by:
preparing a mask comprising a substrate for the mask for allowing X-rays to pass through the substrate for the mask and an X-ray absorbing layer stacked on the substrate for the mask, with the X-ray absorbing layer comprising an aligning pin pattern defining the aligning pin;
applying the mask to the photosensitive layer;
irradiating the photosensitive layer with X-rays;
forming the aligning pin in the photosensitive layer by developing the photosensitive layer; and
separating the aligning pin from the photosensitive layer.

### Claim 11 (depends on 8)

The method of claim 8, comprised of forming the photosensitive layer having the plating hole and the aligning pinhole and the aligning pin by:
preparing a mask comprising a substrate for the mask for allowing X-rays to pass through the substrate for the mask and an X-ray absorbing layer stacked on the substrate for the mask, with the X-ray absorbing layer comprising a plating pattern forming the plating hole, an aligning pinhole pattern forming the aligning pinhole, and an aligning pin pattern defining the aligning pin;
applying the mask to the photosensitive layer;
irradiating the photosensitive layer with X-rays;
forming the plating hole, the aligning pinhole, and the aligning pin in the photosensitive layer by developing the photosensitive layer; and
separating the aligning pin from the photosensitive layer.

### Claim 12 (depends on 9, 10, 11)

The method of any one of claims 9 through 11, comprised of the substrate for the mask being made from silicon (Si).

### Claim 13 (depends on 9, 10, 11)

The method of any one of claims 9 through 11, comprised of the X-ray absorbing layer being made from gold (Au).

### Claim 14 (depends on 8)

The method of claim 8, comprised of removing all the photosensitive layers from the substrate for the microstructure after forming the last plating layer.

### Claim 15 (depends on 14)

The method of claim 14, comprised of processing the substrate for the microstructure by including in the microstructure at least a portion of the substrate for the microstructure after removing all the photosensitive layers.

### Claim 16 (depends on 8)

The method of claim 8, comprised of each of the photosensitive layers being made from PMMA (polymethyl methacrylate).

### Claim 17 (depends on 8)

The method of claim 8, comprised of the substrate for the microstructure being made from a metal.

### Claim 18 (depends on 8)

The method of claim 8, comprised of the substrate for the microstructure and the plating layer being made from the same metal.

### Claim 19

A mask used for a Lithographie, Galvanofomung, and Abformung process, the mask comprising:
a substrate allowing X-rays to pass through the substrate; and
an X-ray absorbing layer stacked on the substrate, with the X-ray absorbing layer positioned upon the substrate and simultaneously creating:
a plating pattern forming a plating hole in a photosensitive layer;
an aligning pin pattern forming an aligning pin in the same photosensitive layer, with the aligning pin disposable to assure alignment of a stack of a plurality of photosensitive layers; and
an aligning pinhole pattern forming an aligning pinhole in which the aligning pin is inserted in the same photosensitive layer to assure said alignment of the stack of the plurality of photosensitive layers.
