# US 7,609,579 B2 · Memory module with failed memory cell repair function and method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,609,579 B2 - Document ID: US7609579B2 - Status: Granted - Kind: B2 - Application number: 11/984,707 - Filed: 2007-11-21 - Published: 2009-05-21 - Granted: 2009-10-27 - Earliest claimed: 2007-11-21 - Assignees: Etron Technology, Inc. - Inventors: Chun Shiah; Tzu Jen Ting; Ho-Yin Chen - Web page: https://patentgrep.com/patent/US7609579B2 ## CPC - G11C 17/165: {Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses (digital stores using resistance random access memory elements G11C13/0002)} - G11C 5/04: Supports for storage elements {, e.g. memory modules}; Mounting or fixing of storage elements on such supports - G11C 29/72: {with optimized replacement algorithms} - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A memory module with failed memory cell repair function and method thereof are provided. The memory module comprises a programming interface, a mode register, a control signal generator, a fuse unit, a main memory array and a redundant memory array, wherein the programming interface is defined by selecting pins from a standard interface of the memory module. The programming interface is used to input a plurality of programming commands and a plurality of programming data. When the failed memory cells have occurred within the main memory array, the mode register will enter into a programming mode according to the programming commands, and the control signal generator will program the fuse unit, such that the redundant memory cells of the redundant memory array will be used to replace the failed memory cells. Thus, the fuse unit can be programmed directly through the standard interface, and the repairing period and the cost will be reduced efficiently. ## Claims ### Claim 1 A memory module with failed memory cell repair function, comprising: a programming interface comprising a plurality of pins selected from a standard interface of said memory module, and used to input a plurality of programming commands and a plurality of programming data; a mode register connected to said standard interface for receiving said programming commands, and said memory module entering into one of a programming mode and a standard mode according to said programming commands; a control signal generator connected to said standard interface and said mode register for receiving said programming commands and said programming data; a fuse unit connected to said control signal generator; a main memory array comprising a plurality of main memory cells, connected to said control signal generator; and a redundant memory array comprising a plurality of redundant memory cells, connected to said fuse unit and said control signal generator for replacing the failed memory cells of said main memory array according to said fuse unit; wherein said control signal generator programs said fuse unit according to said programming commands and said programming data when said memory module is in said programming mode. ### Claim 2 (depends on 1) The memory module of claim 1, wherein said fuse unit comprises: a flip flop connected to said control signal generator; and a fuse array comprising a plurality of fuse cells, connected to said flip flop and said control signal generator. ### Claim 3 (depends on 2) The memory module of claim 2, wherein said fuse array is a nonvolatile memory. ### Claim 4 (depends on 1) The memory module of claim 1, wherein said redundant memory array comprises a row redundant memory array and a column redundant memory array. ### Claim 5 (depends on 1) The memory module of claim 1, wherein said programming commands comprises a plurality of row programming commands and a plurality of column programming commands. ### Claim 6 (depends on 1) The memory module of claim 1, wherein said programming data comprises a plurality of row programming data a plurality of column programming data. ### Claim 7 (depends on 1) The memory module of claim 1, wherein said programming mode further comprises a row programming mode and a column programming mode. ### Claim 8 (depends on 1) The memory module of claim 1, wherein said memory module is selected from one of a dynamic random access memory module and a synchronous dynamic random access memory. ### Claim 9 A method for repairing the failed memory cell, comprising the steps of: defining a programming interface which comprises a plurality of pins selected from a standard interface of said memory module; entering a programming mode according to a first programming command from said programming interface; latching at least a programming data from said programming interface, pulling up a working voltage, and programming a fuse unit according to said programming data and a second programming command from said programming interface; recovering said working voltage and stopping programming said fuse unit according to a third programming command from said programming interface; and exiting said programming mode according to a fourth programming command from said programming interface. ### Claim 10 (depends on 9) The repair method of claim 9, wherein said fuse unit comprises a flip-flop and a fuse array. ### Claim 11 (depends on 10) The repair method of claim 10, wherein said flip-flop is used for latching said programming data. ### Claim 12 (depends on 10) The repair method of claim 10, wherein said fuse array is a nonvolatile memory. ### Claim 13 (depends on 9) The repair method of claim 9, wherein said programming mode is a row programming mode for row memory cell repair. ### Claim 14 (depends on 9) The repair method of claim 9, wherein said programming mode is a column programming mode for column memory cell repair. ### Claim 15 (depends on 13) The repair method of claim 13, wherein said first programming command comprises a first row programming command and said programming data comprises at least a row programming data. ### Claim 16 (depends on 14) The repair method of claim 14, wherein said first programming command comprises a first column programming command and said programming data comprises at least a column programming data.