# US 7,609,577 B2 · Design structure for improving sensing margin of electrically programmable fuses > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,609,577 B2 - Document ID: US7609577B2 - Status: Granted - Kind: B2 - Application number: 11/872,273 - Filed: 2007-10-15 - Published: 2008-02-07 - Granted: 2009-10-27 - Earliest claimed: 2006-07-27 - Assignees: International Business Machines Corporation - Inventors: Darren L. Anand; Gregory J. Fredeman; Toshiaki Kirihata; Alan J. Leslie; John M. Safran - Web page: https://patentgrep.com/patent/US7609577B2 ## CPC - G11C 7/065: {Differential amplifiers of latching type} - G11C 17/165: {Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses (digital stores using resistance random access memory elements G11C13/0002)} - G11C 17/18: Auxiliary circuits, e.g. for writing into memory - G11C 29/027: {in fuses} - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A design structure embodied in a machine readable medium used in a design process includes an apparatus for sensing the state of a programmable resistive memory element device, the apparatus further including a latch device coupled to a fuse node and a reference node, the fuse node included within a fuse leg and the reference node configured within a reference resistance leg, the latch device configured to detect a differential signal developed between the reference node and the fuse node as the result of sense current passed through the fuse leg and the reference resistance leg; and the fuse and reference resistance legs further configured for first and second sensing modes, wherein the second sensing mode utilizes a different level of current than the first sensing mode. ## Claims ### Claim 1 A design structure embodied in a machine readable medium used in a design process, the design structure comprising: an apparatus for sensing the state of a programmable resistive memory element device, the apparatus further comprising a latch device coupled to a fuse node and a reference node, the fuse node included within a fuse leg and the reference node configured within a reference resistance leg, the latch device configured to detect a differential signal developed between the reference node and the fuse node as the result of sense current passed through the fuse leg and the reference resistance leg; and the fuse and reference resistance legs further configured for first and second sensing modes, wherein the second sensing mode utilizes a different level of current than the first sensing mode. ### Claim 2 (depends on 1) The design structure of claim 1, further comprising: a first pair of switching devices, one of which is configured within the fuse leg and the other of which is configured within the reference resistance leg, the first pair of switching devices configured to deliver a first level of current associated with the first sensing mode; and a second pair of switching devices, in parallel with the first pair of switching devices, the second pair of switching devices configured to deliver a second level of current associated with the second sensing mode. ### Claim 3 (depends on 2) The design structure of claim 2, wherein the first pair of switching devices comprises a first pair of PFET devices further configured to precharge the fuse node and the reference node prior to sensing the state of the programmable fuse device, and the second pair of switching devices comprises a second pair of PFET devices configured to operate in conjunction with the first pair of PFET devices in order to increase the sense current used in the second sensing mode. ### Claim 4 (depends on 3) The design structure of claim 3, further comprising a pair of output buffers, one of which is coupled to the fuse node and the other of which is coupled to the reference node, the pair of output buffers configured to drive the state of the latch device. ### Claim 5 (depends on 1) The design structure of claim 1, wherein the programmable resistive memory element device comprises one of: a fuse device, an antifuse device, an EPROM device, a mask ROM device and a flash memory device. ### Claim 6 (depends on 1) The design structure of claim 1, wherein the fuse and reference resistance legs are further configured for a third sensing mode, wherein the third sensing mode utilizes a different level of current than the first and second sensing mode. ### Claim 7 (depends on 6) The design structure of claim 6, further comprising: a first pair of switching devices, one of which is configured within the fuse leg and the other of which is configured within the reference resistance leg, the first pair of switching devices configured to deliver a first level of current associated with the first sensing mode; a second pair of switching devices, in parallel with the first pair of switching devices, the second pair of switching devices configured to deliver a second level of current associated with the second sensing mode; and a third pair of switching devices, in parallel with the first and second pairs of switching devices, the third pair of switching devices configured to deliver a third level of current associated with the third sensing mode, the third level different from both the first and second levels of current. ### Claim 8 (depends on 1) The design structure of claim 1, wherein the design structure comprises a netlist describing the apparatus for sensing the state of the programmable resistive memory element device. ### Claim 9 (depends on 1) The design structure of claim 1, wherein the design structure resides on storage medium as a data format used for the exchange of layout data of integrated circuits. ### Claim 10 (depends on 1) The design structure of claim 1, wherein the design structure includes at least one of test data files, characterization data, verification data, programming data, or design specifications.