# US 7,609,554 B2 · High voltage switching circuit

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- Number: US 7,609,554 B2
- Document ID: US7609554B2
- Status: Granted
- Kind: B2
- Application number: 11/848,511
- Filed: 2007-08-31
- Published: 2007-12-27
- Granted: 2009-10-27
- Earliest claimed: 2005-12-02
- Assignees: Micron Technology, Inc.
- Inventors: Toru Tanzawa
- Web page: https://patentgrep.com/patent/US7609554B2

## CPC

- G11C 8/10: Decoders
- G11C 8/06: Address interface arrangements, e.g. address buffers
- G11C 16/12: Programming voltage switching circuits
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

A high voltage switching circuit that has a depletion mode NMOS transistor, an enhancement mode PMOS transistor and, an enhancement mode NMOS transistor. A control circuit generates first and second control signals. A first control signal controls the enhancement mode NMOS transistor and a logical combination of both control signals provides a bias to control the PMOS transistor. The bias on the PMOS transistor provides a gate voltage greater than ground potential after the high voltage has been switched to the circuit output.

## Claims

### Claim 1

A method for reducing gate to body field stress in a transistor of a high voltage switching circuit comprising a first NMOS transistor operating in a depletion mode and coupled to the high voltage, a PMOS transistor coupled between the first NMOS transistor and circuit output, a second NMOS transistor operating in an enhancement mode and coupled to the circuit output, and a control circuit coupled to the PMOS and second NMOS transistors, the method comprising:
generating a first control signal that changes state at a first predetermined time and enables the circuit output;
generating a second control signal that changes state in response to the enabling of the circuit output; and
logically combining the first and second control signals for controlling the PMOS transistor and the second NMOS transistor such that the high voltage is switched through the first NMOS transistor and the PMOS transistor to the circuit output and the voltage on a gate connection of the PMOS transistor is greater than 0V in response to the change in state of the second control signal.

### Claim 2 (depends on 1)

The method of claim 1 wherein the high voltage is greater than the voltage on the gate connection of the PMOS transistor.

### Claim 3 (depends on 1)

The method of claim 1 wherein the high voltage is 20V and the voltage on the gate connection of the PMOS transistor is 3V.

### Claim 4

A high voltage switching circuit comprising:
a first transistor coupled between the high voltage to be switched and a first node, the first transistor having a gate coupled to a circuit output;
a second transistor coupled between the first transistor and the circuit output, the second transistor having a well connection to the first node;
a third transistor coupled to the second transistor; and
a control circuit coupled to the second and third transistors wherein the control circuit is adapted to switch the high voltage through the first and second transistors to the circuit output and maintain a voltage greater than zero volts on the gate of the second transistor.

### Claim 5 (depends on 4)

The circuit of claim 4 wherein the voltage on the gate of the second transistor is elevated above zero volts in response to the circuit output transition to the high voltage level.

### Claim 6

A high voltage switching circuit comprising:
a first transistor coupled between the high voltage to be switched and a first node, the first transistor having a gate coupled to a circuit output;
a second transistor coupled between the first transistor and the circuit output, the second transistor having a well connection to the first node;
a third transistor coupled to the second transistor; and
a control circuit comprising:
means for generating a first control signal that changes state at a first predetermined time and enables the circuit output;
means for generating a second control signal that changes state in response to the enabling of the circuit output; and
means for logically combining the first and second control signals for controlling the second transistor and the third transistor such that the high voltage is switched through the first transistor and the second transistor to the circuit output and the voltage on a gate connection of the second transistor is greater than 0V in response to the change in state of the second control signal.

### Claim 7 (depends on 6)

The circuit of claim 6 wherein the first transistor is a NMOS depletion mode transistor.

### Claim 8 (depends on 6)

The circuit of claim 6 wherein the second transistor is a PMOS enhancement mode transistor.

### Claim 9 (depends on 6)

The circuit of claim 6 wherein the third transistor is an NMOS enhancement mode transistor.

### Claim 10

A memory device comprising:
an array of memory cells for storing data;
a voltage generation circuit adapted to generate supply voltages and high level programming voltages;
a high voltage switching circuit comprising:
an NMOS depletion mode transistor coupled between the high voltage to be switched and a first node, the NMOS depletion mode transistor having a gate coupled to a circuit output;
a PMOS transistor coupled between the NMOS depletion mode transistor and the circuit output, the PMOS transistor having a well connection to the first node;
an NMOS enhancement mode transistor coupled to the PMOS transistor; and
a control circuit comprising:
means for generating a first control signal that changes state at a first predetermined time and enables the circuit output;
means for generating a second control signal that changes state in response to the enabling of the circuit output; and
means for logically combining the first and second control signals for controlling the PMOS transistor and the NMOS enhancement mode transistor such that the high voltage is switched through the NMOS depletion mode transistor and the PMOS transistor to the circuit output and the voltage on a gate connection of the PMOS transistor is greater than 0V in response to the change in state of the second control signal.

### Claim 11 (depends on 10)

The memory device of claim 10 wherein the array of memory cells comprises FLASH memory cells.

### Claim 12

An electronic system, the system comprising:
a processor that generates memory device control signals;
a memory device coupled to the processor, the memory device comprising:
an array of memory cells;
control circuitry coupled to the memory device control signals; and
a high voltage switching circuit, the high voltage switching circuit comprising:
a first transistor coupled between the high voltage to be switched and a first node, the first transistor having a gate coupled to a circuit output;
a second transistor coupled between the first transistor and the circuit output, the second transistor having a well connection to the first node;
a third transistor coupled to the second transistor; and
a control circuit coupled to the second and third transistors wherein the control circuit is adapted to switch the high voltage through the first and second transistors to the circuit output and maintain a voltage greater than zero volts on the gate of the second transistor.