# US 7,609,432 B2 · Nanowire-based device and method of making same

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- Number: US 7,609,432 B2
- Document ID: US7609432B2
- Status: Granted
- Kind: B2
- Application number: 11/549,283
- Filed: 2006-10-13
- Published: 2008-04-17
- Granted: 2009-10-27
- Earliest claimed: 2006-10-13
- Assignees: Hewlett-Packard Development Company, L.P.
- Inventors: Theodore I. Kamins; Wei Wu; Shih-Yuan Wang; Shashank Sharma
- Web page: https://patentgrep.com/patent/US7609432B2

## CPC

- B81B 3/0021: {Transducers for transforming electrical into mechanical energy or vice versa (dynamo-electric machines H02K99/00; electrostatic machines H02N1/00; piezoelectric devices H10N30/00)}
- B82Y 15/00: Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
- Y10S 977/724: Devices having flexible or movable element
- Y10S 977/762: Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A nanoelectromechanical (NEM) device and a method of making same employ a laterally extending nanowire. The nanowire is grown in place from a vertical side of a vertically extending support block that is provided on a horizontal surface of a substrate. The nanowire is spaced from the horizontal surface. The NEM device includes a component that is provided to influence the nanowire.

## Claims

### Claim 1

A nanoelectromechanical (NEM) device comprising:
a support block extending vertically from a horizontal surface of a substrate, the support block having a vertical side;
a nanowire extending laterally from the vertical side of the support block, the nanowire being spaced from the horizontal surface of the substrate; and
a component that influences the nanowire.

### Claim 2 (depends on 1)

The NEM device of claim 1, further comprising a first electrode extending vertically from the horizontal substrate, the first electrode being adjacent to and spaced from a free end of the nanowire to provide a gap, wherein the support block comprises a second electrode, the first electrode and the second electrode being in electrical communication with the component that influences the nanowire.

### Claim 3 (depends on 2)

The NEM device of claim 2, wherein the component that influences the nanowire comprises a voltage source connected between the first electrode and the second electrode, the component facilitating generation of plasma in the gap between the free end of the nanowire and the first electrode.

### Claim 4 (depends on 2)

The NEM device of claim 2, further comprising a nanoparticle on the free end of the nanowire that facilitates plasma generation in the gap.

### Claim 5 (depends on 2)

The NEM device of claim 2, further comprising means for enhancing a light output that is located in proximity to the gap.

### Claim 6 (depends on 1)

The NEM device of claim 1, further comprising a control electrode in proximity to the nanowire, wherein the support block comprises a support electrode in electrical communication with the nanowire, the component that influences the nanowire being in communication with both the control electrode and the support electrode.

### Claim 7 (depends on 6)

The NEM device of claim 6, wherein the component that influences the nanowire comprises a charge source connected to establish a charge on one or both of the control electrode and the support electrode, such that a charge differential created between the control electrode and the nanowire deflects the nanowire either toward or away from the control electrode.

### Claim 8 (depends on 6)

The NEM device of claim 6, further comprising another support block, the nanowire bridging between the support blocks and being suspended above the substrate surface, the other support block comprising a support electrode in electrical communication with the nanowire.

### Claim 9 (depends on 6)

The NEM device of claim 6, further comprising a reflective coating that is located in proximity to the nanowire.

### Claim 10 (depends on 6)

The NEM device of claim 6, wherein the control electrode is located on the substrate either below the nanowire or to a side of the nanowire.

### Claim 11 (depends on 1)

The NEM device of claim 1, wherein the component that influences the nanowire comprises a proof mass associated with an end portion of the nanowire that facilitates a response to acceleration.

### Claim 12 (depends on 11)

The NEM device of claim 11, further comprising a first electrode adjacent to and spaced from the proof mass, the support block comprising a second electrode, a capacitance between the first electrode and the proof mass changing with movement of the proof mass due to the acceleration.

### Claim 13 (depends on 12)

The NEM device of claim 12, wherein the first electrode either extends vertically from the horizontal substrate as another support block or is a conductive pad on the substrate surface.

### Claim 14 (depends on 11)

The NEM device of claim 11, wherein movement of the proof mass due to the acceleration is detected one or both of capacitively and optically.

### Claim 15 (depends on 11)

The NEM device of claim 11, wherein the proof mass reflects a light beam, such that movement of the proof mass due to the acceleration is detected optically by detecting a change in the reflected light beam.

### Claim 16 (depends on 1)

The NEM device of claim 1, wherein the component that influences the nanowire comprises one or more of a voltage source in electrical communication with the nanowire, a charge source in electrical communication with the nanowire, an electrode in proximity to the nanowire and a proof mass associated with an end portion of the nanowire.

### Claim 17 (depends on 1)

The NEM device of claim 1 used in a display, the display comprising:
an array of pixels, a pixel comprising one or more of the NEM devices; and
control electronics that address the pixels of the array either individually or in a variety of combinations of pixels, wherein the control electronics are in electrical communication with the component that influences the nanowire.

### Claim 18

A nanoelectromechanical (NEM) device comprising:
a support block extending vertically from a semiconductor substrate having a horizontal surface;
a nanowire extending laterally from a vertical side of the support block, the nanowire being spaced from the horizontal surface of the semiconductor substrate; and
means for influencing the nanowire, such that the nanowire facilitates one or more of light deflection, light generation, and an acceleration response.

### Claim 19

A method of making a nanoelectromechanical (NEM) device comprising:
providing a support block on a planar substrate having a horizontal surface;
growing a nanowire from a vertical side of the support block using metal catalyzed growth, such that the nanowire grows laterally from the vertical side, the nanowire being spaced from the horizontal substrate surface; and providing a component that influences the nanowire.

### Claim 20 (depends on 19)

The method of making of claim 19, wherein providing a component comprises providing one or more of a proof mass associated with an end portion of the nanowire, an electrode in proximity to the nanowire, a charge source in electrical communication with the nanowire, and a voltage source in electrical communication with the nanowire.