# US 7,609,195 B2 · On die thermal sensor and method for generating thermal code of ODTS > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,609,195 B2 - Document ID: US7609195B2 - Status: Granted - Kind: B2 - Application number: 12/003,678 - Filed: 2007-12-31 - Published: 2008-07-03 - Granted: 2009-10-27 - Earliest claimed: 2007-01-03 - Assignees: Hynix Semiconductor Inc. - Inventors: Chun-Seok Jeong - Web page: https://patentgrep.com/patent/US7609195B2 ## CPC - G01K 7/015: {using microstructures, e.g. made of silicon} - G01K 7/425: {Thermal management of integrated systems} - H03M 1/186: {in feedforward mode, i.e. by determining the range to be selected directly from the input signal} - H03M 1/48: Servo-type converters - H10W 40/00: Arrangements for thermal protection or thermal control (integrated devices comprising arrangements for thermal protection H10D89/60) - G01K: MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR (radiation pyrometry G01J5/00) - H03M: CODING; DECODING; CODE CONVERSION IN GENERAL (using fluidic means F15C4/00; optical analogue/digital converters G02F7/00; coding, decoding or code conversion, specially adapted for particular applications, see the relevant subclasses, e.g. G01D, G01R, G06F, G06T, G09G, G10L, G11B, G11C, H04B, H04L, H04M, H04N; ciphering or deciphering for cryptography or other purposes involving the need for secrecy G09C) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An on die thermal sensor (ODTS) in a memory device includes: a band gap unit for detecting a temperature of the memory device to output a first voltage corresponding to the temperature; and an analog-to-digital converting unit for outputting a digital code having temperature information based on the first voltage, the digital code having varied resolution according to temperature ranges. ## Claims ### Claim 1 An on die thermal sensor (ODTS) in a memory device, comprising: a band gap unit for detecting a temperature of the memory device and outputting a first voltage corresponding to the temperature; and an analog-to-digital converting unit for outputting a digital code having temperature information based on the first voltage, wherein the analog-to-digital converting unit generates the digital code having varied resolution according to temperature ranges by using a plurality of pull-down driving units of the analog-to-digital converting unit, each of which has a different driving ability according to the temperature ranges. ### Claim 2 (depends on 1) The ODTS as recited in claim 1, wherein the analog-to-digital converting unit generates a second voltage in response to the digital code, the analog-to-digital converting unit generates the digital code using a tracking method which increases or decreases the digital code and the second voltage in response to a comparison of the first voltage with the second voltage, and a slope of the second voltage is varied according to the temperature ranges. ### Claim 3 (depends on 2) The ODTS as recited in claim 2, wherein the analog-to-digital converting unit includes: a voltage comparing unit for outputting an increasing signal and a decreasing signal in response to a comparison of the first voltage with the second voltage; a code generating unit for outputting the digital code in response to the increasing signal and the decreasing signal, and an adjusting code group in response to the digital code; and a second voltage generating unit for generating the second voltage in response to the adjusting code group, the slope of the second voltage varied in response to the adjusting code group. ### Claim 4 (depends on 3) The ODTS as recited in claim 3, wherein the code generating unit further includes a low pass filter for filtering the increasing signal and the decreasing signal and transmitting them to the code generating unit. ### Claim 5 (depends on 3) The ODTS as recited in claim 3, wherein the second voltage generating unit includes: a first node; the plurality of pull-down driving units for performing a pull-down driving operation on the first node based on a corresponding code set of the adjusting code group, each pull-down driving unit having a different pull-down driving ability according to the temperature ranges; and a second node for forming a current mirror with the first node, wherein the second voltage is output at the second node according to an amount of current flowing through the first node. ### Claim 6 (depends on 5) The ODTS as recited in claim 5, wherein each pull-down driving unit includes: a plurality of switch transistors each having a gate receiving a corresponding code of the code set of the adjusting code group to perform a switching operation; and a plurality of current sink transistors, each coupled in series to a respective switch transistor and having a gate receiving a first bias voltage to sink the current flowing on the first node in response to the first bias voltage; wherein the current sink transistors have a gate width according to the temperature range for the pull-down driving unit. ### Claim 7 (depends on 3) The ODTS as recited in claim 3, wherein the code generating unit includes: an up-down counter for increasing or decreasing a digital value based on the increasing signal and the decreasing signal to generate the digital code; and a decoder for decoding the digital code of a binary code to generate the adjusting code group having the number of logic high value (1) corresponding to a value of the digital code. ### Claim 8 (depends on 2) The ODTS as recited in claim 2, wherein the slope of the second voltage decreases as a resolution of the temperature information required in the memory device including the ODTS increases. ### Claim 9 (depends on 2) The ODTS as recited in claim 2, wherein the band gap unit generates a maximum variation voltage and a minimum variation voltage for setting maximum and minimum limits for the second voltage and providing bias voltages for generating the second voltage. ### Claim 10 A memory device, comprising: an on die thermal sensor (ODTS) for outputting a digital code including temperature information by detecting a temperature of the memory device; a signal converter for converting the digital code into a form which is needed in the memory device; and a self-refresh oscillator for controlling a self-refresh period of the memory device according to an output signal of the signal converter, wherein the ODTS generates the digital code having varied resolution according to temperature ranges by using a plurality of pull-down driving units of the ODTS, each of which has a different driving ability according to the temperature ranges. ### Claim 11 (depends on 10) The memory device as recited in claim 10, wherein the ODTS includes; a band gap unit for outputting a first voltage by detecting the temperature of the memory device; and an analog-to-digital converter for outputting the digital code based on the first voltage. ### Claim 12 (depends on 11) The memory device as recited in claim 11, wherein the analog-to-digital converter generates the digital code using a tracking method which increases or decreases the second voltage in response to a comparison of the first voltage with the second voltage, and a slope of the second voltage is varied according to the temperature ranges. ### Claim 13 (depends on 12) The memory device as recited in claim 12, wherein the slope of the second voltage decreases as a resolution of the temperature information required in the memory device including the ODTS increases. ### Claim 14 (depends on 12) The memory device as recited in claim 12, wherein the analog-to-digital converting unit includes: a voltage comparing unit for outputting an increasing signal and a decreasing signal in response to a comparison of the first voltage with the second voltage; a code generating unit for outputting the digital code in response to the increasing signal and the decreasing signal, and an adjusting code group in response to the digital code; and a second voltage generating unit for generating the second voltage in response to the adjusting code group, the slope of the second voltage varied in response to the adjusting code group. ### Claim 15 (depends on 14) The memory device as recited in claim 14, wherein the code generating unit further includes a low pass filter for filtering the increasing signal and the decreasing signal and transmitting them to the code generating unit. ### Claim 16 (depends on 14) The memory device as recited in claim 14, wherein the second voltage generating unit includes: a first node; the plurality of pull-down driving units for performing a pull-down driving operation on the first node based on a corresponding code set of the adjusting code group, each pull-down driving unit having a different pull down driving ability according to the temperature ranges; and a second node for forming a current mirror with the first node, wherein the second voltage is output at the second node according to an amount of the current flowing through the first node. ### Claim 17 (depends on 16) The memory device as recited in claim 16, wherein each pull-down driving unit includes: a plurality of switch transistors each having a gate receiving a corresponding code of the code set of the adjusting code group to perform a switching operation; and a plurality of current sink transistors, each coupled in series to a respective switch transistor and having a gate receiving a first bias voltage to sink the current flowing on the first node in response to the first bias voltage; wherein the current sink transistors have a gate width according to the temperature range for the pull-down driving unit. ### Claim 18 (depends on 14) The memory device as recited in claim 14, wherein the code generating unit includes: an up-down counter for increasing or decreasing a preset digital value based on the increasing signal and the decreasing signal to generate the digital code; and a decoder for decoding the digital code of a binary code to generate the adjusting code group having the number of logic value (1) corresponding to a value of the digital code. ### Claim 19 (depends on 10) The memory device as recited in claim 10, wherein the signal converter generates a plurality of flag signals based on the digital code, each flag signal activated according to the temperature, and the self-refresh oscillator adjusts the self-refresh period according to a flag signal group. ### Claim 20 A method for generating a thermal code of an ODTS in a memory device, the method comprising: outputting a first voltage by detecting a temperature of the memory device; comparing the first voltage with a second voltage; increasing or decreasing a digital code based on the comparison result, wherein the digital code is a binary code; and generating a group of adjusting codes by decoding the digital code, wherein a number of the adjusting codes in the adjusting code group that have a logic value one (1) is adjusted based on the decoded digital code; and generating a second voltage by adjusting an amount of a current flowing on a node based on the adjusting code group, wherein a slope of the second voltage is varied according to temperature ranges. ### Claim 21 (depends on 20) The method as recited in claim 20, wherein the slope of the second voltage decreases as a resolution of temperature information required in the memory device including the ODTS increases. ### Claim 22 (depends on 20) The method as recited in claim 20, wherein the second voltage tracks the first voltage by repeatedly performing the comparing of the first voltage with the second voltage, the increasing or decreasing of the digital code, and the generating of the second voltage.