# US 7,609,070 B2 · Manufacturing method and controlling method of electronic device

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- Number: US 7,609,070 B2
- Document ID: US7609070B2
- Status: Granted
- Kind: B2
- Application number: 11/902,392
- Filed: 2007-09-21
- Published: 2008-03-27
- Granted: 2009-10-27
- Earliest claimed: 2006-09-25
- Assignees: Eudyna Devices Inc.
- Inventors: Tomohiro Kagiyama; Yasuhiro Tosaka; Norikazu Iwagami
- Web page: https://patentgrep.com/patent/US7609070B2

## CPC

- G01R 31/64: Testing of capacitors
- Y10T 29/435: Solid dielectric type
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A manufacturing method of an electronic device includes applying a direct voltage having a first polarity to a capacitor that has an insulating layer including nitrogen and silicon as a capacitor dielectric layer, testing the capacitor to which the direct voltage having the first polarity is applied and determining a nondefective capacitor and a defective capacitor, and applying a direct voltage having a second polarity to the nondefective capacitor. The second polarity is opposite to the first polarity.

## Claims

### Claim 1

A manufacturing method of an electronic device comprising:
applying a direct voltage having a first polarity to a capacitor that has an insulating layer including nitrogen and silicon as a capacitor dielectric layer;
determining a nondefective capacitor and a defective capacitor by testing the capacitor to which the direct voltage having the first polarity is applied; and
applying a direct voltage having a second polarity to the nondefective capacitor, the second polarity being opposite to the first polarity, wherein the capacitor dielectric layer is composed of SiN or SiON.

### Claim 2 (depends on 1)

The method as claimed in claim 1, wherein the capacitor is an MIS capacitor or an MIM capacitor.

### Claim 3 (depends on 1)

The method as claimed in claim 1, wherein the direct voltage having the second polarity is applied to the nondefective capacitor at a temperature under 200 degrees C.

### Claim 4

A controlling method of an electronic device comprising a maintenance step of applying a direct voltage having a second polarity to a capacitor,
the capacitor having an insulating layer including nitrogen and silicon as a capacitor dielectric layer,
a test process step in which a direct voltage having a first polarity being applied to the capacitor,
the second polarity being opposite to the first polarity, wherein the capacitor dielectric layer is composed of SiN or SiON.

### Claim 5 (depends on 4)

The method as claimed in claim 4, wherein the maintenance step is performed at least for a time same as that for which the direct voltage having the first polarity is applied to the capacitor.

### Claim 6 (depends on 4)

The method as claimed in claim 4, wherein the capacitor is used with an alternating-current voltage.

### Claim 7 (depends on 4)

The method as claimed in claim 4, wherein the capacitor is an MIS capacitor or an MIM capacitor.

### Claim 8

A manufacturing method of an electronic device comprising in order:
applying a direct voltage having a first polarity to a capacitor that has an insulating layer including nitrogen and silicon as a capacitor dielectric layer;
applying a direct voltage having a second polarity to the capacitor, the second polarity being opposite to the first polarity; and
testing the capacitor and determining a nondefective capacitor and a defective capacitor wherein the capacitor dielectric layer is composed of SiN or SiON.