# US 7,608,994 B2 · White light emitting device

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- Number: US 7,608,994 B2
- Document ID: US7608994B2
- Status: Granted
- Kind: B2
- Application number: 11/723,961
- Filed: 2007-03-22
- Published: 2007-10-04
- Granted: 2009-10-27
- Earliest claimed: 2006-03-22
- Assignees: Samsung Electro-Mechanics Co., Ltd.
- Inventors: Bum Joon Kim; Tae Geun Kim; Young Chul Shin
- Web page: https://patentgrep.com/patent/US7608994B2

## CPC

- H10H 20/8512: {Wavelength conversion materials}
- H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
- H10W 72/01515: {Forming coatings}
- H10W 72/075: {of bond wires}
- H10W 72/07554: {changes in dispositions}
- H10W 72/547: {Dispositions of multiple bond wires}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- Y10S 428/917: Electroluminescent
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A high quality white light emitting device suitable for miniaturization. The white light emitting device according to the present invention includes a substrate and a light emitting structure composed of an n-semiconductor layer, an active layer and a p-semiconductor layer. The light emission structure emits first emission light. The white light emitting device also includes a wavelength-converting film for absorbing and converting the first emission light to second emission light of another wavelength. The wavelength-converting film is made of europium-silicate.

## Claims

### Claim 1

A white light emitting device comprising:
a substrate;
a light emission structure comprising an n-semiconductor layer, an active layer and a p-semiconductor layer sequentially formed on the substrate, the light emission structure emitting first emission light; and
a wavelength-converting film for absorbing and converting the first emission light to second emission light of another wavelength,
wherein the wavelength-converting film comprises europium-silicate.

### Claim 2 (depends on 1)

The white light emitting device according to claim 1, wherein a portion of the first emission light is combined with the second emission light to produce white light.

### Claim 3 (depends on 1)

The white light emitting device according to claim 1, wherein each of the p-semiconductor layer, the active layer and the n-semiconductor layer comprises a nitride semiconductor.

### Claim 4 (depends on 1)

The white light emitting device according to claim 1, wherein the europium-silicate comprises a material having a composition formula of EuxSiyOz, where 0<X<30, 0<Y<30 and 0<Z<30.

### Claim 5 (depends on 1)

The white light emitting device according to claim 1, wherein the europium-silicate comprises a material having a composition formula of EuxSiyOz, where, 0<x<10, 0<y<10 and 0<z<10.

### Claim 6 (depends on 1)

The white light emitting device according to claim 1, wherein the europium-silicate comprises a material having a composition formula of EuxSiyOz, where 0<x<6, 0<y<6 and 0<z<6.

### Claim 7 (depends on 1)

The white light emitting device according to claim 1, wherein the wavelength-converting film is formed on at least one location selected from the group consisting of a bottom surface of the substrate, an upper surface of the p-semiconductor layer and between the substrate and the n-semiconductor layer.

### Claim 8 (depends on 7)

The white light emitting device according to claim 7, wherein the first emission light comprises blue light, and the second emission light comprises light in a wavelength range from green to red, or yellow light.

### Claim 9 (depends on 7)

The white light emitting device according to claim 7, wherein the first emission light comprises light in a wavelength range from blue to green, and the second emission light comprises yellow light.

### Claim 10 (depends on 7)

The white light emitting device according to claim 7, wherein the first emission light comprises ultraviolet rays, and the second emission light comprises light in a wavelength range from blue to red.

### Claim 11 (depends on 7)

The white light emitting device according to claim 7, wherein white light is emitted in a direction from the light emission structure upward, opposite to the substrate.

### Claim 12 (depends on 7)

The white light emitting device according to claim 7, wherein white light is emitted in a direction from the substrate downward, opposite to the light emission structure.