# US 7,608,928 B2 · Laminated body and semiconductor device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 7,608,928 B2
- Document ID: US7608928B2
- Status: Granted
- Kind: B2
- Application number: 11/597,172
- Filed: 2005-05-20
- Published: 2008-02-21
- Granted: 2009-10-27
- Earliest claimed: 2004-05-21
- Assignees: Jsr Corporation; Sumitomo Bakelite Co., Ltd.
- Inventors: Kaori Shirato; Atsushi Shiota; Masahiro Tada; Sumitoshi Asakuma
- Web page: https://patentgrep.com/patent/US7608928B2

## CPC

- H10P 14/662: {Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548)}
- C08G 73/22: Polybenzoxazoles
- H10P 14/683: {carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10W 20/071: {of dielectric parts thereof}
- H10W 20/074: {of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers}
- H10W 20/077: {on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence)}
- H10W 20/088: {involving partial etching of via holes}
- H10P 14/6342: {Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- H10W 20/0888: {wherein via-level dielectrics are compositionally different than trench-level dielectrics}
- Y10T 428/31678: Of metal
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A laminate includes a copper wiring layer (20) provided over a semiconductor layer and having a specific pattern, a protective layer (30) formed of a polybenzoxazole resin layer provided on the copper wiring layer (20), and an insulating layer (40) provided on the protective layer.

## Claims

### Claim 1

A laminate comprising:
a copper wiring layer provided over a semiconductor layer and having a specific pattern;
a protective layer formed of a polybenzoxazole resin layer provided on the copper wiring layer; and
an insulating layer provided on the protective layer and comprising a silica film and an organic film stacked in layers,
wherein the organic film is formed of polybenzoxazole and is in contact with the protective layer.

### Claim 2 (depends on 1)

The laminate according to claim 1, further comprising a second organic film, wherein the organic film is a first organic film, and the first organic film, the silica film, and the second organic film are stacked in an order of the first organic film, the silica film and the second organic film.

### Claim 3 (depends on 1)

The laminate according to claim 1, further comprising a hard mask layer provided on the insulating layer.

### Claim 4 (depends on 1)

The laminate according to claim 1, wherein the polybenzoxazole resin layer is formed of a resin having a repeating unit of the following general formula (1),
wherein X represents at least one group selected from groups of the following formula (2), Y represents at least one group selected from groups of the following formula (3), and n represents an integer from 1 to 10,000,
wherein X1 represents a group selected from groups of the following formula (4),
provided that a hydrogen atom on the benzene ring of the groups of the formulas (2), (3), and (4) is optionally replaced with a crosslinking group, or is optionally replaced with at least one organic group which is selected from aliphatic groups and aromatic groups and optionally have a crosslinking group.

### Claim 5 (depends on 4)

The laminate according to claim 4, wherein the polybenzoxazole resin layer is formed of a resin having, as Y in the repeating unit of the general formula (1), at least one group selected from the groups of the formula (3) in which a hydrogen atom on the benzene ring is replaced with an ethynyl group or a phenylethynyl group.

### Claim 6 (depends on 4)

The laminate according to claim 4, wherein the polybenzoxazole resin layer is formed of a resin having at least one group selected from groups of the following formula (5) or (6) as Y in the repeating unit of the general formula (1).

### Claim 7 (depends on 1)

The laminate according to claim 1, wherein the silica film is a film produced by heating a hydrolysis-condensation product obtained by hydrolyzing and condensing at least one compound selected from the group consisting of compounds of the following general formulas (7) to (10),
HSi(OR1)3 (7)
wherein R1 represents a monovalent organic group,
RaSi(OR2)4−a (8)
wherein R represents a fluorine atom or a monovalent organic group, R2 represents a monovalent organic group, and a represents an integer of 1 or 2,
Si(OR3)4 (9)
wherein R3 represents a monovalent organic group,
R4b(R5O)3−bSi—(R8)d—Si(OR6)3−cR7C (10)
wherein R4 to R7 individually represent monovalent organic groups, b and c individually represent integers from 0 to 2, R8 represents an oxygen atom, a phenylene group, or a group —(CH2)— (wherein n represents an integer from 1 to 6), and d represents 0 or 1.

### Claim 8 (depends on 3)

The laminate according to claim 3, wherein the hard mask layer is a layer including at least one of a silica film and an organic film.

### Claim 9 (depends on 1)

A semiconductor device comprising a wiring layer formed in the insulating layer of the laminate according to claim 1 using a dual damascene method.

### Claim 10 (depends on 1)

The laminate according to claim 1, wherein the organic film has a dielectric constant of 3 or less.