# US 7,608,922 B2 · Semiconductor device including amplifier and frequency converter

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- Number: US 7,608,922 B2
- Document ID: US7608922B2
- Status: Granted
- Kind: B2
- Application number: 11/138,505
- Filed: 2005-05-27
- Published: 2005-12-01
- Granted: 2009-10-27
- Earliest claimed: 2004-05-31
- Assignees: Renesas Technology Corp.
- Inventors: Tadatoshi Danno; Toru Nagamine; Hiroshi Mori; Tsukasa Ichinose
- Web page: https://patentgrep.com/patent/US7608922B2

## CPC

- H03G 3/3036: {in high-frequency amplifiers or in frequency-changers (H03G3/3052, H03G3/32, H03G3/34 take precedence)}
- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40)
- H10W 72/07251: {characterised by changes in properties of the bump connectors during connecting}
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 72/5449: {not being orthogonal to a side surface of the chip, e.g. fan-out arrangements}
- H10W 72/5522: {comprising gold [Au]}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 72/932: {Plan-view shape, i.e. in top view}
- H10W 74/114: {by a substrate and the encapsulations}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H03G: CONTROL OF AMPLIFICATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A miniaturized semiconductor device has a package substrate, a semiconductor chip mounted on the main surface of the package substrate and having plural LNAs each for amplifying a signal, an RF VCO for converting the frequency of the signal supplied from each LNA, and an IF VCO for converting the frequency of a signal supplied from a baseband. A plurality of ball electrodes are provided on the back surface of the package substrate. The package substrate is provided with a first common GND wire for supplying a GND potential to each of the LNAs, with a second common GND wire for supplying the GND potential to the RF VCO, and with a third common GND wire for supplying the GND potential to the IF VCO. The first, second, and third common GND wires are separated from each other.

## Claims

### Claim 1

A semiconductor device comprising:
a wiring substrate having a main surface and a back surface opposite to the main surface;
a semiconductor chip mounted over the main surface of said wiring substrate, electrically connected to the wiring substrate, and having a first circuit portion for amplifying an inputted signal and a second circuit portion for converting a frequency of the signal supplied from the first circuit portion; and
a plurality of external terminals provided over the back surface of said wiring substrate,
wherein a first common conductor portion electrically connected to said first circuit portion to supply a GND potential to said first circuit portion and a second common conductor portion electrically connected to said second circuit portion to supply the GND potential to said second circuit portion are provided over said wiring substrate, and said first and second common conductor portions are separated from each other,
wherein a plurality of low noise amplifiers to which signals at different frequencies are inputted are provided each as said first circuit portion in said semiconductor chip, and said first common conductor portion is disposed between each adjacent two of a plurality of wiring portions provided over the main surface of said wiring substrate correspondingly to said individual low noise amplifiers.

### Claim 2 (depends on 1)

A semiconductor device according to claim 1, wherein each of the plurality of wiring portions provided over said wiring substrate correspondingly to said individual low noise amplifiers is enclosed by said first common conductor portion.

### Claim 3 (depends on 1)

A semiconductor device according to claim 1, wherein said external terminals are smaller in number than bonding electrodes connected electrically to surface electrodes over said semiconductor chip over said wiring substrate.

### Claim 4 (depends on 3)

A semiconductor device according to claim 3, wherein said surface electrodes over said semiconductor chip are larger in number than said bonding electrodes over said wiring substrate.

### Claim 5

A semiconductor device comprising:
a wiring substrate having a main surface and a back surface opposite to the main surface;
a semiconductor chip mounted over the main surface of said wiring substrate, electrically connected to the wiring substrate, and having a first circuit portion for amplifying an inputted signal, a second circuit portion for converting a frequency of the signal supplied from the first circuit portion, and a third circuit portion for converting a frequency of the supplied signal; and
a plurality of external terminals provided over the back surface of said wiring substrate,
wherein a first common conductor portion electrically connected to said first circuit portion to supply a GND potential to said first circuit portion, a second common conductor portion electrically connected to said second circuit portion to supply the GND potential to said second circuit portion, and a third common conductor portion electrically connected to said third circuit portion to supply the GND potential to said third circuit portion are provided over said wiring substrate, and said first, second, and third common conductor portions are separated from each other,
wherein a packaging substrate over which said semiconductor device is mounted has a first common conductor portion of substrate side which is connected electrically to said first circuit portion and a second common conductor portion of substrate side which is connected electrically to said second circuit portion, and said first and second common conductor portions of substrate side are separated from each other in surface layer wiring at least in a region of said packaging substrate corresponding to a bottom portion of said semiconductor device.

### Claim 6

A semiconductor device comprising:
a wiring substrate having a main surface and a back surface opposite to the main surface;
a semiconductor chip mounted over the main surface of said wiring substrate, electrically connected to the wiring substrate, and having a first circuit portion for amplifying an inputted signal and a second circuit portion for converting a frequency of the signal supplied from the first circuit portion; and
a plurality of external terminals provided over the back surface of said wiring substrate;
wherein a first common conductor portion electrically connected to said first circuit portion to supply a GND potential to said first circuit portion and a second common conductor portion electrically connected to said second circuit portion to supply the GND potential to said second circuit portion are provided over said wiring substrate,
wherein a plurality of low noise amplifiers to which signals at different frequencies are inputted are provided each as said first circuit portion in said semiconductor chip, and said first common conductor portion is disposed between each adjacent two of a plurality of wiring portions provided over the main surface of said wiring substrate correspondingly to said individual low noise amplifier.