# US 7,608,913 B2 · Noise isolation between circuit blocks in an integrated circuit chip

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- Number: US 7,608,913 B2
- Document ID: US7608913B2
- Status: Granted
- Kind: B2
- Application number: 11/360,285
- Filed: 2006-02-23
- Published: 2007-08-23
- Granted: 2009-10-27
- Earliest claimed: 2006-02-23
- Assignees: Freescale Semiconductor, Inc.
- Inventors: Radu M. Secareanu; Suman K. Banerjee; Olin L. Hartin
- Web page: https://patentgrep.com/patent/US7608913B2

## CPC

- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10W 10/011: {of isolation regions comprising dielectric materials}
- H10W 10/031: {of isolation regions comprising PN junctions}
- H10W 10/051: {of isolation region based on field-effect}
- H10W 10/10: Isolation regions comprising dielectric materials
- H10W 10/30: Isolation regions comprising PN junctions
- H10W 10/50: Isolation regions based on field-effect
- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- H10D 84/0151: {Manufacturing their isolation regions}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An integrated circuit includes a p-well block region having a high resistivity due to low doping concentration formed in a region of a substrate for providing noise isolation between a first circuit block and a second circuit block. The integrated circuit further includes a guard region formed surrounding the p-well block region for providing noise isolation between the first circuit block and the second circuit block.

## Claims

### Claim 1

An integrated circuit, comprising:
a first circuit block formed in a substrate;
a second circuit block formed in the substrate; and
a plurality of regions formed between the first circuit block and the second circuit block, wherein the plurality of regions are configured to provide noise isolation between the first circuit block and the second circuit block, and the plurality of regions includes:
a p-well block region formed in the substrate, which has a first doping concentration of a p-type dopant,
a first portion of a guard region formed in the substrate between the p-well block region and the first circuit block, wherein the first portion of the guard region has a second doping concentration of a p-type dopant,
a second portion of the guard region formed in the substrate between the p-well block region and the second circuit block, wherein the second portion of the guard region has the second doping concentration,
a first grounded highly doped region formed in the substrate between the first portion of the guard region and the first circuit block, wherein the first grounded highly doped region has a third doping concentration of a p-type dopant, and
a second grounded highly doped region formed in the substrate between the second portion of the guard region and the second circuit block, wherein the second grounded highly doped region has the third doping concentration, and wherein the second doping concentration is higher than the first doping concentration;
wherein the guard region has an intermediate amount of doping between the first doping concentration of the p-well block region and the third doping concentration of the first grounded highly doped region;
wherein the p-well block region does not include any active region therein; and
wherein the guard region surrounds the p-well block region and has a depth substantially deeper than that of the first and second grounded highly doped regions.

### Claim 2 (depends on 1)

The integrated circuit of claim 1, wherein the p-well block region is a wall formed between the first circuit block and the second circuit block.

### Claim 3 (depends on 1)

The integrated circuit of claim 1, wherein the guard region contacts the p-well block region, and the first and second grounded highly doped regions contact the guard region.