# US 7,608,906 B2 · Simultaneous unipolar multispectral integrated technology (SUMIT) detectors

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- Number: US 7,608,906 B2
- Document ID: US7608906B2
- Status: Granted
- Kind: B2
- Application number: 11/939,527
- Filed: 2007-11-13
- Published: 2009-05-14
- Granted: 2009-10-27
- Earliest claimed: 2007-11-13
- Assignees: Teledyne Licensing, LLC
- Inventors: William Tennant
- Web page: https://patentgrep.com/patent/US7608906B2

## CPC

- H10F 39/1825: {Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures}
- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/809: {of hybrid image sensors}
- H10F 39/811: {Interconnections}
- H10W 72/07251: {characterised by changes in properties of the bump connectors during connecting}
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A multi-color photo sensor having a first photodiode with a first p-type layer and a first n-type layer, the first photodiode generates charge when illuminated with photons of a first wavelength range, a second photodiode with a second p-type layer and a second n-type layer, the second photodiode generates charge when illuminated with photons of a second wavelength range, and a readout integrated circuit electrically coupled to the first n-type layer of the first photodiode via a first metal interconnect and electrically coupled to the second n-type layer of the second photodiode via a second metal interconnect, the second metal interconnect traverses through the first photodiode to contact the second n-type layer of the second photodiode, the second metal interconnect is separated from the first photodiode by a first passivating insulator.

## Claims

### Claim 1

A multi-color photo detector comprising:
a first photodiode having a first p-type layer and a first n-type layer, the first photodiode generates charge when illuminated with light photons of a first wavelength range;
a second photodiode having a second p-type layer and a second n-type layer, the second photodiode generates charge when illuminated with light photons of a second wavelength range;
a barrier layer separating the first photodiode from the second photodiode to prevent spectral cross-talk; and
a readout integrated circuit electrically coupled to the first p-type layer of the first photodiode via a first metal interconnect and electrically coupled to the second p-type layer of the second photodiode via a second metal interconnect, the second metal interconnect traverses through the first photodiode and the barrier layer to contact the second p-type layer of the second photodiode, the second metal interconnect is separated from the first photodiode and the barrier layer by a first passivating insulator, and wherein the second metal interconnect traverses through the second n-type layer and the second p-type layer of the second photodiode, the first passivating insulator separates the second metal interconnect from the second n-type layer and the second p-type layer of the second photodiode, the second metal interconnect extends beyond the second p-type layer and contacts an exposed surface of the second p-type layer.

### Claim 2 (depends on 1)

The multi-color photo detector of claim 1, wherein the first p-type layer and the second p-type layer are reticulated along their respective edges.

### Claim 3 (depends on 1)

The multi-color photo detector of claim 1, wherein the first passivating insulator covers an exposed surface of the first p-type layer.

### Claim 4 (depends on 1)

The multi-color photo detector of claim 1 further comprising a second passivating insulator for covering an exposed surface of the second p-type layer.

### Claim 5 (depends on 1)

The multi-color photo detector of claim 1, wherein the second metal interconnect traverses through the second n-type layer of the second photodiode, the first passivating insulator separating the second metal interconnect from the second n-type layer of the second photodiode.

### Claim 6 (depends on 1)

The multi-color photo detector of claim 1 further comprising a third metal interconnect that electrically couples the second metal interconnect to the second p-layer.

### Claim 7 (depends on 1)

The multi-color photo detector of claim 1 further comprising:
a third photodiode having a third n-type layer, the third photodiode generates charge when illuminated with light photons of a third wavelength range;
a graded composition barrier separating the second n-type layer of the second photodiode from the third n-type layer of the third photodiode; and
a voltage bias applied to the third photodiode to control the flow of charge generated from the second and third photodiodes.

### Claim 8

A multi-color photo sensor comprising:
a first photodiode having a first p-type layer and a first n-type layer, the first photodiode generates charge when illuminated with photons of a first wavelength range;
a second photodiode having a second p-type layer and a second n-type layer, the second photodiode generates charge when illuminated with photons of a second wavelength range; and
a readout integrated circuit electrically coupled to the first n-type layer of the first photodiode via a first metal interconnect and electrically coupled to the second n-type layer of the second photodiode via a second metal interconnect, the second metal interconnect traverses through the first photodiode to contact the second n-type layer of the second photodiode, the second metal interconnect is separated from the first photodiode by a first passivating insulator, and wherein the second metal interconnect traverses through the second p-type layer and the second n-type layer of the second photodiode, the first passivating insulator separates the second metal interconnect from the second p-type layer and the second n-type layer of the second photodiode, the second metal interconnect extends beyond the second n-type layer and contacts an exposed surface of the second n-type layer.

### Claim 9 (depends on 8)

The multi-color photo sensor of claim 8 further comprising a barrier layer separating the first photodiode from the second photodiode to prevent spectral cross-talk, the barrier layer is selected from a group consisting of a semiconductor, an insulator and an air gap.

### Claim 10 (depends on 8)

The multi-color photo sensor of claim 8, wherein the first p-type layer and the second p-type layer are reticulated along their respective edges.

### Claim 11 (depends on 8)

The multi-color photo sensor of claim 8, wherein the first passivating insulator covers an exposed surface of the first p-type layer.

### Claim 12 (depends on 8)

The multi-color photo sensor of claim 8 further comprising a second passivating insulator for covering an exposed surface of the second p-type layer.

### Claim 13 (depends on 8)

The multi-color photo sensor of claim 8, wherein the second metal interconnect traverses through the second p-type layer of the second photodiode, the first passivating insulator separating the second metal interconnect from the second p-type layer of the second photodiode.

### Claim 14 (depends on 8)

The multi-color photo sensor of claim 8 further comprising a third metal interconnect that electrically couples the second metal interconnect to the second p-layer.

### Claim 15 (depends on 8)

The multi-color photo sensor of claim 8 further comprising:
a third photodiode having a third n-type layer, the third photodiode generates charge when illuminated with photons of a third wavelength range;
a graded composition barrier separating the second n-type layer of the second photodiode from the third n-type layer of the third photodiode; and
a voltage bias applied to the third photodiode to control the flow of charge generated from the second and third photodiodes.