# US 7,608,892 B2 · Semiconductor device and manufacturing method of the same

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- Number: US 7,608,892 B2
- Document ID: US7608892B2
- Status: Granted
- Kind: B2
- Application number: 11/783,777
- Filed: 2007-04-12
- Published: 2007-12-06
- Granted: 2009-10-27
- Earliest claimed: 2006-04-28
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Masayuki Sakakura
- Web page: https://patentgrep.com/patent/US7608892B2

## CPC

- H10D 30/6731: {Top-gate only TFTs}
- H10D 30/0314: {of lateral top-gate TFTs comprising only a single gate}
- H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon}
- H10D 30/6745: {Polycrystalline or microcrystalline silicon}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

To reduce the adverse affect that characteristics of end portions of a channel forming region of a semiconductor film have on characteristics of a transistor. A gate electrode is formed over a channel forming region of a semiconductor film over a substrate, with a gate insulating film interposed therebetween. The semiconductor film is disposed in a region inside end portions of the gate insulating film. A side surface of the channel forming region is not in contact with at least the gate insulating film, so there is a space enclosed by the substrate, the side surface of the channel forming region, and the gate insulating film. Further, the side surface of the channel forming region is not necessarily in contact with the gate electrode. There may be a space enclosed by the substrate, the side surface of the channel forming region, the gate insulating film, and the gate electrode.

## Claims

### Claim 1

A semiconductor device comprising:
a substrate;
an island-shaped semiconductor film having a channel forming region, formed over the substrate;
a gate insulating film that covers the island-shaped semiconductor film and has a side surface in a region outside a side surface of the island-shaped semiconductor film; and
a conductive film that covers the channel forming region with the gate insulating film interposed therebetween,
wherein the side surface of the island-shaped semiconductor film is not in contact with the gate insulating film and the conductive film.

### Claim 2

A semiconductor device comprising:
a substrate;
an island-shaped semiconductor film having a channel forming region, formed over the substrate;
a gate insulating film that covers the island-shaped semiconductor film and has a side surface in a region outside a side surface of the island-shaped semiconductor film;
a conductive film that covers the channel forming region with the gate insulating film interposed therebetween; and
a space enclosed by the side surface of the island-shaped semiconductor film, the gate insulating film, and the substrate.

### Claim 3

A semiconductor device comprising:
a substrate;
an island-shaped semiconductor film having a channel forming region, formed over the substrate;
a gate insulating film that covers the island-shaped semiconductor film and has a side surface in a region outside a side surface of the island-shaped semiconductor film;
a conductive film that covers the channel forming region with the gate insulating film interposed therebetween; and
a space enclosed by the side surface of the island-shaped semiconductor film, the gate insulating film, the conductive film, and the substrate.

### Claim 4

A semiconductor device comprising:
a substrate;
an island-shaped semiconductor film having a channel forming region, formed over the substrate;
a gate insulating film that covers the island-shaped semiconductor film and has a side surface in a region outside a side surface of the island-shaped semiconductor film;
a conductive film that covers the channel forming region with the gate insulating film interposed therebetween;
an insulating film formed over the conductive film; and
a space enclosed by the side surface of the island-shaped semiconductor film, the gate insulating film, the insulating film, and the substrate.

### Claim 5 (depends on 2)

The semiconductor device according to claim 2, wherein the side surface of the island-shaped semiconductor film is not in contact with the gate insulating film and the conductive film.

### Claim 6 (depends on 3)

The semiconductor device according to claim 3, wherein the side surface of the island-shaped semiconductor film is not in contact with the gate insulating film and the conductive film.

### Claim 7 (depends on 4)

The semiconductor device according to claim 4, wherein the side surface of the island-shaped semiconductor film is not in contact with the gate insulating film and the conductive film.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, wherein the conductive film functions as a gate electrode.

### Claim 9 (depends on 2)

The semiconductor device according to claim 2, wherein the conductive film functions as a gate electrode.

### Claim 10 (depends on 3)

The semiconductor device according to claim 3, wherein the conductive film functions as a gate electrode.

### Claim 11 (depends on 4)

The semiconductor device according to claim 4, wherein the conductive film functions as a gate electrode.

### Claim 12 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a source electrode and a drain electrode connected to the island-shaped semiconductor film.

### Claim 13 (depends on 2)

The semiconductor device according to claim 2, further comprising:
a source electrode and a drain electrode connected to the island-shaped semiconductor film.

### Claim 14 (depends on 3)

The semiconductor device according to claim 3, further comprising:
a source electrode and a drain electrode connected to the island-shaped semiconductor film.

### Claim 15 (depends on 4)

The semiconductor device according to claim 4, further comprising:
a source electrode and a drain electrode connected to the island-shaped semiconductor film.