# US 7,608,890 B2 · Semiconductor device and method of manufacturing semiconductor device

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- Number: US 7,608,890 B2
- Document ID: US7608890B2
- Status: Granted
- Kind: B2
- Application number: 11/451,318
- Filed: 2006-06-13
- Published: 2007-01-04
- Granted: 2009-10-27
- Earliest claimed: 2005-06-14
- Assignees: Kabushiki Kaisha Toshiba
- Inventors: Atsushi Yagishita
- Web page: https://patentgrep.com/patent/US7608890B2

## CPC

- H10D 86/011: {comprising FinFETs}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 30/6219: {characterised by the source or drain electrodes}
- H10D 86/215: {comprising FinFETs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method of manufacturing a semiconductor device includes forming a plurality of Fins including a semiconductor material on an insulation layer; forming gate insulation films on sidewalls of the Fins; forming a gate electrode which extends in a direction of arrangement of the Fins and which is electrically insulated from the Fins, the gate electrode is common in the Fins on the gate insulation film; implanting an impurity into portions of the Fins by using the gate electrode as a mask to form a source-drain diffusion layer, the portions of the Fins extending on both sides of the gate electrodes; and depositing a conductive material on both sides of the Fins to connect the Fins to each other.

## Claims

### Claim 1

A semiconductor device comprising:
an insulation layer;
a plurality of Fins arranged on the insulating film at a pitch smaller than a minimum pitch which includes a line and space pattern;
gate insulation films formed on sidewalls of the Fins;
a gate electrode which extends in a direction of arrangement of the Fins and which is electrically insulated from the plurality of Fins, the gate electrode being common in the plurality of Fins;
source-drain layers formed in portions of the Fins, the portions of the Fins being arranged on both sides of the gate electrode; and
a metal or a metal silicide which is in contact with upper surfaces or side surfaces of the source-drain layers of the plurality of Fins to connect the Fins to each other.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein
pitches between Fins being adjacent to each other is any one of ½, ¼, ⅛ . . . ½n (n is a natural number) of a minimum pitch which includes a line and space pattern.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein
a material of the gate electrode of an nMOS is a material having a work function closer to a conduction band than to the center level of the bandgap of silicon, and
a material of the gate electrode of a pMOS is a material having a work function closer to a valence band than to the center level of the bandgap of silicon.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein
a material of the gate electrode of an nMOS is any one of YbSi2-x, ErSi2-x, TbSi2-x, DySi2-xRuTa, Ta, Hf—AIN, TaN, Ti, (Ar-ion-doped) Mo, and Er, and
a material of the gate electrode of a pMOS is any one of PtSi, Ru, Ta—AIN, Mo, NiGe, Pt, Ni, W, and TiN.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein
a material of the source-drain electrodes of an nMOS is a material having a work function closer to a conduction band than to the center level of the bandgap of silicon, and
a material of the source-drain electrodes of a pMOS is a material having a work function closer to a valence band than to the center level of the bandgap of silicon.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, wherein
a material of the source-drain electrode of an nMOS is any one of YbSi2-x, ErSi2-x, TbSi2-x, DySi2-x, RuTa, Ta, Hf—AIN, TaN, Ti, (Ar-ion-doped) Mo, and Er, and
a material of the source-drain electrode of a pMOS is any one of PtSi, Ru, Ta—AIN, Mo, NiGe, Pt, Ni, W, and TiN.

### Claim 7 (depends on 2)

The semiconductor device according to claim 2, wherein
a material of the gate electrode of the nMOS is a material having a work function closer to a conduction band than to the center level of the bandgap of silicon, and
a material of the gate electrode of a pMOS is a material having a work function closer to a valence band than to the center level of the bandgap of silicon.

### Claim 8 (depends on 2)

The semiconductor device according to claim 2, wherein
a material of the gate electrode of an nMOS is any one of YbSi2-x, ErSi2-x, TbSi2-x, DySi2-x, RuTa, Ta, Hf—AIN, TaN, Ti, (Ar-ion-doped) Mo, and Er and
a material of the gate electrode of a pMOS is any one of PtSi, Ru, Ta—AIN, Mo, NiGe, Pt, Ni, W, and TiN.

### Claim 9 (depends on 2)

The semiconductor device according to claim 2, wherein
a material of the source-drain electrodes of an nMOS is a material having a work function closer to a conduction band than to the center level of the bandgap of silicon, and
a material of the source-drain electrodes of a pMOS is a material having a work function closer to a valence band than to the center level of the bandgap of silicon.

### Claim 10 (depends on 2)

The semiconductor device according to claim 2, wherein
a material of the source-drain electrode of an nMOS is any one of YbSi2-x, ErSi2-x, TbSi2-x, DySi2-x, RuTa, Ta, Hf—AIN, TaN, Ti, (Ar-ion-doped) Mo, and Er, and
a material of the source-drain electrode of a pMOS is any one of PtSi, Ru, Ta—AIN, Mo, NiGe, Pt, Ni, W, and TiN.