# US 7,608,885 B2 · Flash memory device and method of manufacturing the same

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- Number: US 7,608,885 B2
- Document ID: US7608885B2
- Status: Granted
- Kind: B2
- Application number: 11/751,013
- Filed: 2007-05-19
- Published: 2007-12-06
- Granted: 2009-10-27
- Earliest claimed: 2005-12-29
- Assignees: Hynix Semiconductor Inc.
- Inventors: Kwon Hong; Eun Shil Park; Min Sik Jang
- Web page: https://patentgrep.com/patent/US7608885B2

## CPC

- H10D 30/681: {having only two programming levels (Floating gate IGFETs programmable by two single electrons H10D30/688)}
- H10D 64/035: {comprising conductor-insulator-conductor-insulator-semiconductor structures}
- H10D 64/685: {being perpendicular to the channel plane}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A non-volatile memory device has a gate dielectric film formed between a floating gate and a control gate. The gate dielectric film is formed by forming an oxide film and a ZrO2/Al2O3/ZrO2 (ZAZ) film. Accordingly, the reliability of non-volatile memory devices can be improved while securing a high coupling ratio.

## Claims

### Claim 1

A non-volatile memory device, comprising:
a tunnel dielectric film formed over a semiconductor substrate;
a floating gate formed over the tunnel dielectric film;
a gate dielectric film formed over the floating gate, the gate dielectric film having a ZrO2—Al2O3—ZrO2—SiO2 (ZAZO) structure, the ZAZO structuring including a first ZrO2 film, an Al2O3 film over the first ZrO2 film, a second ZrO2 film over the Al2O3 film, and a first SiO2 film over the second ZrO2 film; and
a control gate formed over the gate dielectric film.

### Claim 2 (depends on 1)

The non-volatile memory device as claimed in claim 1, wherein the gatedielectric film further includes a second SiO2 film such that the gate dielectric film has a OZAZO structure.

### Claim 3 (depends on 2)

The non-volatile memory device as claimed in claim 2,
wherein a thickness of each of the first and the second SiO2 films is set to range from about 30 angstroms to about 60 angstroms.

### Claim 4 (depends on 1)

The non-volatile memory device as claimed in claim 1, wherein a thickness of the first SiO2 film is set to a range from about 30 angstroms to about 120 angstroms.

### Claim 5 (depends on 1)

The non-volatile memory device as claimed in claim 1, wherein a thickness of a ZAZ structure of the ZAZO structure is set to range from about 40 angstroms to about 100 angstroms.

### Claim 6 (depends on 5)

The non-volatile memory device as claimed in claim 5, wherein a thickness of the Al2O3 film of the ZAZ structure is set to range from 3 angstroms to 6 angstroms.