# US 7,608,877 B2 · Circuit device having capacitor and field effect transistor, and display apparatus therewith

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- Number: US 7,608,877 B2
- Document ID: US7608877B2
- Status: Granted
- Kind: B2
- Application number: 11/555,943
- Filed: 2006-11-02
- Published: 2007-06-07
- Granted: 2009-10-27
- Earliest claimed: 2005-12-06
- Assignees: Canon Kabushiki Kaisha
- Inventors: Shunsuke Shioya; Sotomitsu Ikeda
- Web page: https://patentgrep.com/patent/US7608877B2

## CPC

- H10D 62/118: {Nanostructure semiconductor bodies}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- H10B 12/03: {Making the capacitor or connections thereto}
- H10B 12/05: {Making the transistor}
- H10D 1/692: {Electrodes}
- H10D 62/121: {oriented parallel to substrates}
- H10D 62/122: {oriented at angles to substrates, e.g. perpendicular to substrates}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/12: Active-matrix OLED [AMOLED] displays
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10B: ELECTRONIC MEMORY DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

In a circuit device having a field effect transistor and a capacitor, the capacitor is connected to at least one of a gate electrode, a source electrode and a drain electrode of a field effect transistor, the field effect transistor has a channel comprised of a first nano-wire, and the capacitor comprises a first electrode comprised of a second nano-wire having electroconductivity, a dielectric layer partly covering the peripheral face of the first electrode and a second electrode covering the peripheral face of the dielectric layer.

## Claims

### Claim 1

A circuit device having a field effect transistor and a capacitor, wherein the capacitor is connected to at least one of a gate electrode, a source electrode and a drain electrode of the field effect transistor,
the field effect transistor has a channel comprised of a nano-wire,
the capacitor comprises a capacitor core electrode comprised of a first electrode, the first electrode comprised of the nano-wire, a dielectric layer partly covering a peripheral face of the first electrode and a second electrode covering a peripheral face of the dielectric layer, and
the composition of the nano-wire is changed between the transistor portion and capacitor portion, wherein the electro-conductivity of the nano-wire is made higher at the portion corresponding to the capacitor core electrode than at the portion corresponding to the transistor channel, and
a display element is connected to the source electrode or the drain electrode of the field effect transistor of the circuit device.

### Claim 2 (depends on 1)

The circuit device according to claim 1, wherein the first electrode has a first end portion and a second end portion, and the dielectric layer covers the first end portion and the peripheral face of the first electrode between the first end portion and the second end portion, but not the second end portion.

### Claim 3 (depends on 1)

The circuit device according to claim 1, wherein the peripheral face of the first electrode is covered with the dielectric layer and the second electrode one by one, or with dielectric layers and second electrodes alternately in lamination.

### Claim 4 (depends on 1)

The circuit device according to claim 1 wherein one end portion of the first electrode is not covered with the dielectric layer and the second electrode is to be bared.

### Claim 5

A circuit device having a field effect transistor and a capacitor, wherein the capacitor is connected to at least one of a gate electrode, a source electrode and a drain electrode of the field effect transistor,
the field effect transistor has a channel comprised of a nano-wire,
the capacitor comprises a capacitor core electrode comprised of a first electrode, the first electrode comprised of the nano-wire, a dielectric layer partly covering a peripheral face of the first electrode and a second electrode covering a peripheral face of the dielectric layer, and
the composition of the nano-wire is changed between the transistor portion and capacitor portion, wherein the electro-conductivity of the nano-wire is made higher at the portion corresponding to the capacitor core electrode than at the portion corresponding to the transistor channel, and
an organic light-emitting display element is connected to the source electrode or the drain electrode of the field effect transistor of the circuit device.

### Claim 6 (depends on 5)

The circuit device according to claim 5, wherein the first electrode has a first end portion and a second end portion, and the dielectric layer covers the first end portion and the peripheral face of the first electrode between the first end portion and the second end portion, but not the second end portion.

### Claim 7 (depends on 5)

The circuit device according to claim 5, wherein the peripheral face of the first electrode is covered with the dielectric layer and the second electrode one by one, or with dielectric layers and second electrodes alternately in lamination.

### Claim 8 (depends on 5)

The circuit device according to claim 5 wherein one end portion of the first electrode is not covered with the dielectric layer and the second electrode is to be bared.

### Claim 9

A circuit device having a field effect transistor and a capacitor, wherein the capacitor is connected to at least one of a gate electrode, a source electrode and a drain electrode of the field effect transistor,
the field effect transistor has a channel comprised of a nano-wire,
the capacitor comprises a capacitor core electrode comprised of a first electrode, the first electrode comprised of the nano-wire, a dielectric layer covering a peripheral face of the first electrode and a second electrode covering a peripheral face of the dielectric layer, and
the composition of the nano-wire is changed between the transistor portion and capacitor portion, wherein the electro-conductivity of the nano-wire is made higher at the portion corresponding to the capacitor core electrode than at the portion corresponding to the transistor channel, and
a display element is connected to the source electrode or the drain electrode of the field effect transistor of the circuit device.