# US 7,608,871 B2 · Solid image pick-up element with a single layer electrode structure and method of producing the same

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- Number: US 7,608,871 B2
- Document ID: US7608871B2
- Status: Granted
- Kind: B2
- Application number: 10/570,130
- Filed: 2005-06-30
- Published: 2008-09-11
- Granted: 2009-10-27
- Earliest claimed: 2004-06-30
- Assignees: FUJIFILM Corporation
- Inventors: Tsutomu Aita; Hideki Kooriyama; Maki Saito
- Web page: https://patentgrep.com/patent/US7608871B2

## CPC

- H10F 39/151: {Geometry or disposition of pixel elements, address lines or gate electrodes}
- H10F 39/014: {of CMOS image sensors}
- H10F 39/1534: {Interline transfer}
- H10F 39/807: {Pixel isolation structures}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A solid image pick-up element comprises: a photoelectric converting portion; a charge transmitting portion comprising a charge transmitting electrode that transmits a charge generated by the photoelectric converting portion; and a peripheral circuit portion connected to the charge transmitting portion, wherein a surface level of a field oxide film provided at the peripheral circuit portion and the charge transmitting portion to surround an effective image pick-up region of the photoelectric converting portion is to a degree the same as a surface level of the photoelectric converting portion.

## Claims

### Claim 1

A solid image pick-up element comprising:
a photoelectric converting portion;
a charge transmitting portion comprising a charge transmitting electrode that transmits a charge generated by the photoelectric converting portion;
a peripheral circuit portion connected to the charge transmitting portion;
a wiring layer for the peripheral circuit portion; and
wherein a surface level of a field oxide film provided at the peripheral circuit portion and the charge transmitting portion to surround an effective image pick-up region of the photoelectric converting portion is to a degree the same as a surface level of the photoelectric converting portion,
the charge transmitting electrode includes a first electrode, and
a surface level of the first electrode is substantially the same as a surface level of the wiring layer.

### Claim 2 (depends on 1)

The solid image pick-up element according to claim 1,
wherein the charge transmitting electrode has a single layer electrode structure comprising a second electrode and said a first electrode formed via an insulting film between electrodes covering a side wall of the second electrode.

### Claim 3 (depends on 2)

The solid image pick-up element according to claim 2,
wherein the first electrode comprises a first layer conductive film, and the second electrode comprises a second layer conductive film.

### Claim 4 (depends on 3)

The solid image pick-up element according to claim 3,
wherein the first layer conductive film is provided with a dummy pattern on the field oxide film.

### Claim 5 (depends on 1)

The solid image pick-up element according to claim 1,
wherein the field oxide film is a film formed by selective oxidation (LOCOS).

### Claim 6 (depends on 4)

The solid image pick-up element according to claim 4,
wherein the field oxide film is formed in a trench.

### Claim 7 (depends on 1)

The solid image pick-up element according to claim 1,
wherein the field oxide film is an insulating film filled in a trench.

### Claim 8 (depends on 1)

The solid image pick-up element according to claim 1, further comprising;
a semiconductor substrate; and
a gate oxide film that is formed between the charge transmitting electrode and the semiconductor substrate,
wherein the gate oxide film is formed between the wiring layer for the peripheral circuit portion and the semiconductor substrate.